# US 8,772,800 B2 · Semiconductor light-emitting device

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- Number: US 8,772,800 B2
- Document ID: US8772800B2
- Status: Granted
- Kind: B2
- Application number: 14/059,038
- Filed: 2013-10-21
- Published: 2014-02-20
- Granted: 2014-07-08
- Earliest claimed: 2011-12-12
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Naoharu Sugiyama; Taisuke Sato; Kotaro Zaima; Jumpei Tajima; Toshiki Hikosaka; Yoshiyuki Harada; Hisashi Yoshida; Shinya Nunoue
- Web page: https://patentgrep.com/patent/US8772800B2

## CPC

- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer.

## Claims

### Claim 1

A semiconductor light-emitting device comprising:
a first conductivity type first semiconductor layer containing GaN;
a second conductivity type second semiconductor layer containing GaN;
a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and containing InGaN and GaN; and
a first layer containing AlGaN,
a lattice length in the a-axis direction of the first semiconductor layer being longer than an intrinsic lattice constant in the a-axis direction of GaN,
a lattice length in the a-axis direction of the second semiconductor layer being longer than an intrinsic lattice constant in the a-axis direction of GaN.

### Claim 2 (depends on 1)

The device according to claim 1, wherein
the first layer is provided on a side opposite to the light emitting layer of the first semiconductor layer.

### Claim 3 (depends on 1)

The device according to claim 1, further comprising:
a second layer containing AlGaN and provided on a side opposite to the light emitting layer of the second semiconductor layer.

### Claim 4 (depends on 1)

The device according to claim 1, wherein
an equivalent lattice spacing of silicon which becomes a crystal substrate on which a crystal layer of at least either of the first semiconductor layer and the second semiconductor layer is grown is larger than the intrinsic lattice constant of GaN.

### Claim 5 (depends on 1)

The device according to claim 1, wherein
a thermal expansion coefficient of a crystal of silicon which becomes a crystal substrate on which a crystal layer of at least either of the first semiconductor layer and the second semiconductor layer is grown is smaller than a thermal expansion coefficient of GaN.

### Claim 6 (depends on 1)

The device according to claim 1, wherein
an average In composition of the light emitting layer is 4.0% or more, and
a thickness of the light emitting layer is 56 nanometers or more.

### Claim 7 (depends on 1)

The device according to claim 1, wherein
an average In composition of the light emitting layer is 4.5% or more, and
a thickness of the light emitting layer is 48 nanometers or more.

### Claim 8 (depends on 1)

The device according to claim 1, further comprising:
a support substrate provided on the side opposite to the light emitting layer of the second semiconductor layer, and the support substrate supporting the first layer, the first semiconductor layer, the light emitting layer, and the second semiconductor layer.

### Claim 9 (depends on 1)

The device according to claim 1, further comprising:
a first electrode penetrating the first layer and being electrically connected to the first semiconductor layer.

### Claim 10 (depends on 1)

The device according to claim 1, further comprising:
a second electrode electrically connected to the second semiconductor layer.

### Claim 11

A semiconductor light-emitting device comprising:
a first conductivity type first semiconductor layer containing GaN;
a second conductivity type second semiconductor layer containing GaN;
a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and containing InGaN and GaN; and
a first layer containing AlGaN,
a wavenumber in the Raman spectrum in the first semiconductor layer being larger than 568 cm−1,
a wavenumber in the Raman spectrum in the second semiconductor layer being larger than 568 cm−1.

### Claim 12 (depends on 11)

The device according to claim 11, wherein
the first layer is provided on a side opposite to the light emitting layer of the first semiconductor layer.

### Claim 13 (depends on 11)

The device according to claim 11, further comprising:
a second layer containing AlGaN and provided on a side opposite to the light emitting layer of the second semiconductor layer.

### Claim 14 (depends on 11)

The device according to claim 11, wherein
an equivalent lattice spacing of silicon which becomes a crystal substrate on which a crystal layer of at least either of the first semiconductor layer and the second semiconductor layer is grown is larger than the intrinsic lattice constant of GaN.

### Claim 15 (depends on 11)

The device according to claim 11, wherein
a thermal expansion coefficient of a crystal of silicon which becomes a crystal substrate on which a crystal layer of at least either of the first semiconductor layer and the second semiconductor layer is grown is smaller than a thermal expansion coefficient of GaN.

### Claim 16 (depends on 11)

The device according to claim 11, wherein
an average In composition of the light emitting layer is 4.0% or more, and
a thickness of the light emitting layer is 56 nanometers or more.

### Claim 17 (depends on 11)

The device according to claim 11, wherein
an average In composition of the light emitting layer is 4.5% or more, and
a thickness of the light emitting layer is 48 nanometers or more.

### Claim 18 (depends on 11)

The device according to claim 11, further comprising:
a support substrate provided on the side opposite to the light emitting layer of the second semiconductor layer, and the support substrate supporting the first layer, the first semiconductor layer, the light emitting layer, and the second semiconductor layer.

### Claim 19 (depends on 11)

The device according to claim 11, further comprising:
a first electrode penetrating the first layer and being electrically connected to the first semiconductor layer.

### Claim 20 (depends on 11)

The device according to claim 11, further comprising:
a second electrode electrically connected to the second semiconductor layer.