# US 8,772,777 B2 · Organic light-emitting display device and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,777 B2 - Document ID: US8772777B2 - Status: Granted - Kind: B2 - Application number: 13/158,632 - Filed: 2011-06-13 - Published: 2012-06-07 - Granted: 2014-07-08 - Earliest claimed: 2010-12-03 - Assignees: Samsung Display Co., Ltd. - Applicants: June-Woo Lee; Sung-Ho Kim - Inventors: June-Woo Lee; Sung-Ho Kim - Web page: https://patentgrep.com/patent/US8772777B2 ## CPC - H10D 86/0231: {using masks, e.g. half-tone masks} - H10K 59/121: characterised by the geometry or disposition of pixel elements - H10K 59/124: Insulating layers formed between TFT elements and OLED elements - H10K 59/879: {comprising refractive means, e.g. lenses} - H10K 59/1201: {Manufacture or treatment} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device comprises: a substrate in which a light-emitting region and a thin-film transistor (TFT) region are defined; and a plurality of insulating films formed on the substrate. A refractive index changes at only one of the interfaces between insulating films, which correspond to the light-emitting region and are formed between the substrate and a first electrode of an organic electroluminescence display element, and a refractive index changes at two or more of the interfaces between insulating films which correspond to the TFT region. ## Claims ### Claim 1 An organic light-emitting display device, comprising: a substrate in which a light-emitting region and a thin-film transistor (TFT) region are defined; and a plurality of insulating films formed on the substrate, wherein a refractive index changes at only one of interfaces between insulating films, which correspond to the light-emitting region and which are formed between the substrate and a first electrode of an organic electroluminescence display element, and a refractive index changes at at least two interfaces between insulating films which correspond to the TFT region. ### Claim 2 (depends on 1) The display device of claim 1, wherein the TFT region of the substrate comprises: a first insulating film formed on the substrate; a semiconductor layer formed on the first insulating film; a second insulating film formed on the semiconductor layer; a gate electrode formed on the second insulating film; a third insulating film formed on the gate electrode; source and drain electrodes formed on the third insulating film; and a fourth insulating film formed on the source and drain electrodes. ### Claim 3 (depends on 2) The display device of claim 2, wherein the first insulating film comprises a first sub-insulating film and a second sub-insulating film formed sequentially on the substrate, wherein the first sub-insulating film is made of one of SiNx and SiON, and the second sub-insulating film is made of SiO2. ### Claim 4 (depends on 3) The display device of claim 3, wherein the second insulating film comprises a third sub-insulating film and a fourth sub-insulating film formed sequentially on the semiconductor layer, wherein the third sub-insulating film is made of SiO2, and the fourth sub-insulating film is made of one of SiNx, SiON, and a high-k film. ### Claim 5 (depends on 4) The display device of claim 4, wherein the third insulating film comprises a fifth sub-insulating film and a sixth sub-insulating film formed sequentially on the gate electrode, wherein the fifth sub-insulating film is made of SiO2, and the sixth sub-insulating film is made of one of SiNx and SiON. ### Claim 6 (depends on 5) The display device of claim 5, wherein the third sub-insulating film directly contacts the substrate in the light-emitting region. ### Claim 7 (depends on 6) The display device of claim 6, wherein the fifth sub-insulating film directly contacts the third sub-insulating film in the light-emitting region. ### Claim 8 (depends on 7) The display device of claim 7, wherein the refractive index changes only at an interface between the fifth sub-insulating film and the sixth sub-insulating film disposed between the substrate and the first electrode of the organic electroluminescence display element in the light-emitting region. ### Claim 9 (depends on 4) The display device of claim 4, wherein the fourth sub-insulating film has a same pattern shape as the gate electrode. ### Claim 10 (depends on 4) The display device of claim 4, wherein the substrate further comprises a capacitor region, and wherein the capacitor region comprises: the first and second sub-insulating films formed on the substrate; a capacitor first electrode formed on the second sub-insulating film; the third and fourth sub-insulating films formed on the capacitor first electrode; and a capacitor second electrode formed on the fourth sub-insulating film. ### Claim 11 (depends on 3) The display device of claim 3, wherein the first sub-insulating film and the second sub-insulating film have a same pattern shape as the semiconductor layer. ### Claim 12 (depends on 3) The display device of claim 3, wherein the first and second sub-insulating films comprise regions which protrude from sidewalls of the semiconductor layer. ### Claim 13 A method of manufacturing an organic light-emitting display device, the method comprising the steps of: sequentially forming a first insulating film, which comprises a stack of a first sub-insulating film and a second sub-insulating film, and a film for forming a semiconductor layer on a substrate in which a light-emitting region and a TFT region are defined; forming a first photoresist pattern on the film for forming the semiconductor layer; etching the film for forming the semiconductor layer, the second sub-insulating film, and the first sub-insulating film using the first photoresist pattern as an etch mask; removing the first photoresist pattern and then sequentially forming a second insulating film, which comprises a stack of a third sub-insulating film and a fourth sub-insulating film, and a conductive film for forming a gate electrode on an entire surface of the substrate having a semiconductor layer; forming a second photoresist pattern on the conductive film for forming the gate electrode; and etching the conductive film for forming the gate electrode and the fourth sub-insulating film using the second photoresist pattern as an etch mask. ### Claim 14 (depends on 13) The method of claim 13, wherein the first sub-insulating film is made of one of SiNx and SiON, the second and third sub-insulating films are made of SiO2, and the fourth sub-insulating film is made of one of SiNx, SiON, and a high-k film. ### Claim 15 (depends on 14) The method of claim 14, wherein the first photoresist pattern comprises a first region and a second region having different thicknesses, wherein the first region is thicker than the second region, the first region corresponds to a region in which the semiconductor layer is formed, and the second region corresponds to the TFT region excluding the light-emitting region. ### Claim 16 (depends on 14) The method of claim 14, further comprising: removing the second photoresist pattern and then forming a third insulating film, which comprises a stack of a fifth sub-insulating film and a sixth sub-insulating film, on the entire surface of the substrate having a gate electrode; forming source and drain electrodes on the sixth sub-insulating film; and forming a fourth insulating film on the entire surface of the substrate having the source and drain electrodes. ### Claim 17 (depends on 16) The method of claim 16, wherein the fifth sub-insulating film is made of SiO2, and the sixth sub-insulating film and the fourth insulating film are made of one of SiNx and SiON. ### Claim 18 (depends on 16) An organic light-emitting display device fabricated by the method of claim 16, wherein a refractive index changes at only one of interfaces between insulating films, which correspond to the light-emitting region and which are formed between the substrate and a first electrode of an organic electroluminescence display element, and a refractive index changes at at least two interfaces between insulating films which correspond to the TFT region. ### Claim 19 (depends on 16) An organic light-emitting display device fabricated by the method of claim 16, wherein the TFT region of the substrate comprises: the first insulating film formed on the substrate; the semiconductor layer formed on the first insulating film; the second insulating film formed on the semiconductor layer; the gate electrode formed on the second insulating film; a third insulating film formed on the gate electrode; source and drain electrodes formed on the third insulating film; and a fourth insulating film formed on the source and drain electrodes. ### Claim 20 (depends on 15) The method of claim 15, wherein the first photoresist pattern is formed using a slit mask or a halftone mask.