# US 8,772,775 B2 · Display device and method for manufacturing the same

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- Number: US 8,772,775 B2
- Document ID: US8772775B2
- Status: Granted
- Kind: B2
- Application number: 13/092,846
- Filed: 2011-04-22
- Published: 2012-04-19
- Granted: 2014-07-08
- Earliest claimed: 2010-10-18
- Assignees: Samsung Display Co., Ltd.
- Applicants: Joung-Keun Park; Jae-Hyuk Jang
- Inventors: Joung-Keun Park; Jae-Hyuk Jang
- Web page: https://patentgrep.com/patent/US8772775B2

## CPC

- H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/1213: {the pixel elements being TFTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A display device includes a substrate; a gate wire including a gate electrode and a first capacitor electrode formed on the substrate; a gate insulating layer formed on the gate wire; a semiconductor layer pattern formed on the gate insulating layer, and including an active region overlapping at least a part of the gate electrode and a capacitor region overlapping at least a part of the first capacitor electrode; an etching preventing layer formed on a part of the active region of the semiconductor layer pattern; and a data wire including a source electrode and a drain electrode formed over the active region of the semiconductor layer from over the etching preventing layer, and separated with the etching preventing layer therebetween, and a second capacitor electrode formed on the capacitor region of the semiconductor layer.

## Claims

### Claim 1

A display device, comprising:
a substrate;
a gate wire including a gate electrode and a first capacitor electrode formed on the substrate;
a gate insulating layer formed on the gate wire;
a semiconductor layer pattern formed on the gate insulating layer, the semiconductor layer pattern including an active region overlapping at least a part of the gate electrode and a capacitor region overlapping at least a part of the first capacitor electrode;
a data wire including a source electrode and a drain electrode that are disposed spaced-apart from each other and are formed over the active region of the semiconductor layer, the data wire including a second capacitor electrode formed on the capacitor region of the semiconductor layer; and
an etching preventing layer formed on a part of the active region of the semiconductor layer pattern and continuously extending from a first end of the etching preventing layer that is interposed between the active region of the semiconductor layer pattern and the source electrode to a second end of the etching preventing layer that is interposed between the active region of the semiconductor layer pattern and the drain electrode.

### Claim 2 (depends on 1)

The display device of claim 1, wherein the semiconductor layer pattern and the data wire are formed with a same pattern except for a part overlapping the etching preventing layer.

### Claim 3 (depends on 2)

The display device of claim 2, wherein the etching preventing layer has different etching selection ratios with respect to at least one of the semiconductor layer pattern and the data wire.

### Claim 4 (depends on 2)

The display device of claim 2, wherein the gate wire further includes a first connection line, the data wire further includes a second connection line overlapping at least a part of the first connection line, and the semiconductor layer pattern further includes a connecting region disposed below the second connection line.

### Claim 5 (depends on 4)

The display device of claim 4, further including a connecting contact hole penetrating the connecting region of the gate insulating layer and the semiconductor layer pattern between the first connection line and the second connection line, wherein the first connection line contacts the second connection line through the connecting contact hole.

### Claim 6 (depends on 5)

The display device of claim 5, wherein the second connection line of the data wire and the connecting region of the semiconductor layer pattern are formed with a same pattern except at the connecting contact hole.

### Claim 7 (depends on 4)

The display device of claim 4, wherein the second connection line of the data wire and the connecting region of the semiconductor layer pattern are formed with a same pattern.

### Claim 8 (depends on 7)

The display device of claim 7, further comprising:
a planarization layer formed on the data wire;
a drain contact hole for revealing a part of the drain electrode by penetrating the planarization layer; and
a capacitor contact hole for revealing a part of the second capacitor electrode by penetrating the planarization layer.

### Claim 9 (depends on 8)

The display device of claim 8, further comprising a pixel electrode contacting the drain electrode and the second capacitor electrode through the drain contact hole and the capacitor contact hole.

### Claim 10 (depends on 8)

The display device of claim 8, further comprising:
a first connecting contact hole for revealing a part of the first connection line by penetrating the planarization layer and the gate insulating layer; and
a second connecting contact hole for revealing a part of the second connection line by penetrating the planarization layer.

### Claim 11 (depends on 10)

The display device of claim 10, further comprising a connecting member formed on the planarization layer and connecting the first connection line and the second connection line through the first connecting contact hole and the second connecting contact hole.

### Claim 12 (depends on 1)

The display device of claim 1, wherein the semiconductor layer pattern is made of an oxide semiconductor.

### Claim 13 (depends on 12)

The display device of claim 12, wherein the semiconductor layer includes oxygen (O) and at least one of gallium (Ga), indium (In), zinc (Zn), hafnium (Hf), and tin (Sn).