# US 8,772,774 B2 · Backplane structures for organic light emitting electronic devices using a TFT substrate

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,772,774 B2
- Document ID: US8772774B2
- Status: Granted
- Kind: B2
- Application number: 12/747,963
- Filed: 2008-12-11
- Published: 2010-10-14
- Granted: 2014-07-08
- Earliest claimed: 2007-12-14
- Assignees: E. I. Du Pont de Nemours and Company
- Applicants: Yaw-Ming A. Tsai; Ian D. Parker; Ines Meinel
- Inventors: Yaw-Ming A. Tsai; Ian D. Parker; Ines Meinel
- Web page: https://patentgrep.com/patent/US8772774B2

## CPC

- H10K 59/35: comprising red-green-blue [RGB] subpixels
- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

There is provided a backplane for an organic electronic device including a TFT substrate having a base substrate, a polysilicon layer, a gate dielectric layer, a gate electrode, an interlayer dielectric, and a data electrode; an insulating layer over the TFT substrate; a multiplicity of first openings in the insulating layer having a depth d1; a multiplicity of pixelated diode electrode structures, wherein a first set of diode electrode structures are in the first openings; and a bank structure defining pixel areas over the diode electrode structures; wherein the first openings and first set of diode electrode structures are in at least a first set of the pixel areas.

## Claims

### Claim 1

A backplane for an organic electronic device comprising:
a TFT substrate;
an insulating layer over the TFT substrate;
a multiplicity of first openings in the insulating layer having a depth d1;
a multiplicity of pixelated diode electrode structures, wherein a first set of diode electrode structures are in the first openings, and the first set of diode electrode structures is less than the total number of diode electrode structures;
a bank structure defining pixel areas over the diode electrode structures;
wherein the first openings and first set of diode electrode structures are in at least a first set of the pixel areas, further comprising a multiplicity of second openings in the insulating layer having a depth d2, wherein a second set of diode electrode structures are in the second openings, and the second openings are in a second set of pixel areas, wherein d1 is different from d2.

### Claim 2 (depends on 1)

The backplane of claim 1, wherein the first openings extend into the TFT substrate.

### Claim 3 (depends on 1)

The backplane of claim 1, wherein the second openings extend into the TFT substrate.

### Claim 4 (depends on 1)

The backplane of claim 1, further comprising a multiplicity of third openings in the insulating layer having a depth d3, wherein a third set of diode electrode structures are in the third openings, and the third openings are in a third set of pixel areas.

### Claim 5 (depends on 4)

The backplane of claim 4, wherein the third openings extend into the TFT substrate.

### Claim 6 (depends on 4)

The backplane of claim 4, wherein d1, d2, and d3 are all different.

### Claim 7 (depends on 1)

The backplane of claim 1, wherein the insulating layer is organic.

### Claim 8 (depends on 1)

The backplane of claim 1, wherein the insulating layer is inorganic.

### Claim 9

An organic electronic device comprising:
a backplane comprising:
a TFT substrate;
an insulating layer over the TFT substrate;
a multiplicity of first openings in the insulating layer having a depth d1;
a multiplicity of second openings in the insulating layer having a depth d2;
a multiplicity of third openings in the insulating layer having a depth d3;
a multiplicity of pixelated diode electrode structures, wherein a first set of diode electrode structures are in the first openings, wherein a second set of diode electrode structures are in the second openings, wherein a third set of diode electrode structures are in the third openings, and the first set of diode electrode structures is less than the total number of diode electrode structures;
a bank structure defining pixel areas over the diode electrode structures;
wherein the first openings and first set of diode electrode structures are in at least a first set of the pixel areas, and the second openings are in a second set of pixel areas and the third openings are in a third set of pixel areas; and
a first photoactive layer comprising a first photoactive material over the first set of diode electrode structures in the first openings in the first pixel areas and a second photoactive layer comprising a second photoactive material in the second openings in the second pixel areas, and a third photoactive layer comprising a third photoactive material in the third openings in the third pixel areas, wherein d1, d2, and d3 are all different.

### Claim 10 (depends on 9)

The device of claim 9, wherein the first, second, and third photoactive materials are light-emitting materials which have emission in the red, green, and blue regions of the visible spectrum, respectively.