# US 8,772,766 B2 · Organic electroluminescent display device

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- Number: US 8,772,766 B2
- Document ID: US8772766B2
- Status: Granted
- Kind: B2
- Application number: 13/867,471
- Filed: 2013-04-22
- Published: 2013-09-12
- Granted: 2014-07-08
- Earliest claimed: 1999-09-30
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei Yamazaki; Yasuyuki Arai
- Web page: https://patentgrep.com/patent/US8772766B2

## CPC

- H05B 33/04: Sealing arrangements {, e.g. against humidity}
- H10K 59/131: Interconnections, e.g. wiring lines or terminals
- H10K 59/871: {Self-supporting sealing arrangements}
- H10K 59/879: {comprising refractive means, e.g. lenses}
- H10K 59/8791: {Arrangements for improving contrast, e.g. preventing reflection of ambient light}
- H10K 59/874: {including getter material or desiccant}
- H10K 2102/3026: {Top emission}
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An organic EL display device of active matrix type wherein insulated-gate field effect transistors formed on a single-crystal semiconductor substrate are overlaid with an organic EL layer; characterized in that the single-crystal semiconductor substrate (413 in FIG. 4) is held in a vacant space (414) which is defined by a bed plate (401) and a cover plate (405) formed of an insulating material, and a packing material (404) for bonding the bed and cover plates; and that the vacant space (414) is filled with an inert gas and a drying agent, whereby the organic EL layer is prevented from oxidizing.

## Claims

### Claim 1

A goggle type display device comprising:
first and second light emitting devices, each of which includes a single crystal semiconductor substrate;
first and second insulated gate field effect transistors provided on the single crystal semiconductor substrate;
a field oxide film isolates the first insulated gate field effect transistor from the second insulated gate field effect transistor;
an EL layer comprising an organic material provided over the insulated gate field effect transistors;
color filters over the EL layer;
a source wiring line electrically connected to the first insulated gate field effect transistor;
a passivation film comprising silicon nitride over the EL layer;
a first plate and a second plate formed of an insulating material;
a first lens corresponding to the second plate of the first light emitting device; and
a second lens corresponding to the second plate of the second light emitting device,
wherein the EL layer emits a white light, and
wherein the source wiring line and the field oxide film overlap each other.

### Claim 2 (depends on 1)

The goggle type display device according to claim 1, wherein the single crystal semiconductor substrate is held in a space which is defined by the first plate and the second plate.

### Claim 3 (depends on 1)

The goggle type display device according to claim 1, wherein the single crystal semiconductor substrate includes n-wells.

### Claim 4 (depends on 1)

The goggle type display device according to claim 1, further comprising:
light intercepting layers over the EL layer.

### Claim 5

A goggle type display device comprising:
first and second light emitting devices, each of which includes a single crystal semiconductor substrate;
first and second insulated gate field effect transistors provided on the single crystal semiconductor substrate;
a field oxide film isolates the first insulated gate field effect transistor from the second insulated gate field effect transistor;
a pixel electrode over the insulated gate field effect transistors;
an EL layer comprising an organic material provided over the pixel electrode;
color filters over the EL layer;
a source wiring line electrically connected to the first insulated gate field effect transistor;
a passivation film comprising silicon nitride over the EL layer;
a first plate and a second plate formed of an insulating material;
a first lens corresponding to the second plate of the first light emitting device; and
a second lens corresponding to the second plate of the second light emitting device,
wherein the EL layer emits a white light, and
wherein the source wiring line and the field oxide film overlap each other.

### Claim 6 (depends on 5)

The goggle type display device according to claim 5, wherein the single crystal semiconductor substrate is held in a space which is defined by the first plate and the second plate.

### Claim 7 (depends on 5)

The goggle type display device according to claim 5, wherein the single crystal semiconductor substrate includes n-wells.

### Claim 8 (depends on 5)

The goggle type display device according to claim 5, further comprising:
light intercepting layers over the EL layer.

### Claim 9 (depends on 5)

The goggle type display device according to claim 5, wherein the pixel electrode has a diffusing reflective surface.