# US 8,772,729 B1 · APDs using nano-plasmonic metamaterials > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,729 B1 - Document ID: US8772729B1 - Status: Granted - Kind: B1 - Application number: 13/360,570 - Filed: 2012-01-27 - Granted: 2014-07-08 - Earliest claimed: 2011-09-23 - Assignees: Rockwell Collins, Inc. - Applicants: Robert G. Brown; James H. Stanley - Inventors: Robert G. Brown; James H. Stanley - Web page: https://patentgrep.com/patent/US8772729B1 ## CPC - H10F 77/1433: {Quantum dots} - B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites - H10F 30/2255: {in which the active layers form heterostructures, e.g. SAM structures} - H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)} - B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ## Abstract An avalanche photodiode (APD) electro-magnetic radiation (EMR) detector is described. The detector includes an EMR absorption region, a voltage biasing element, and a charge multiplication region. The EMR absorption region includes a substantially regular array of nano-particles embedded in a matrix material. The voltage biasing element is configured to apply a bias voltage to the matrix material such that electrical current is directly generated in the EMR absorption region based on a cooperative plasmon effect in the detector material when electro-magnetic radiation in a predetermined wavelength range is incident upon the detector material, where the dominant mechanism for decay in the cooperative plasmon effect is non-radiative. The charge multiplication region is arranged relative to the EMR absorption region to avalanche multiply the electrical current generated in the EMR absorption region. ## Claims ### Claim 1 An avalanche photodiode (APD) electro-magnetic radiation (EMR) detector, comprising: an EMR absorption region comprising a substantially regular array of nano-particles embedded in a matrix material; a voltage biasing element configured to apply a bias voltage to the matrix material such that electrical current is directly generated in the EMR absorption region based on a cooperative plasmon effect in the EMR absorption region when electro-magnetic radiation in a predetermined wavelength range is incident upon the EMR absorption region, where the dominant mechanism for decay in the cooperative plasmon effect is non-radiative; and a charge multiplication region arranged relative to the EMR absorption region to avalanche multiply the electrical current generated in the EMR absorption region, where the array comprises a plurality of detector elements, each detector element comprising respective groups of nano-particles. ### Claim 2 (depends on 1) The detector of claim 1, having an ionization rate ratio of about 0.0004 or less. ### Claim 3 (depends on 1) The detector of claim 1, wherein the nano-particles comprise metal, semiconductor, or doped oxide material. ### Claim 4 (depends on 1) The detector of claim 1, wherein the predetermined wavelength range includes one or more ranges inclusively between the deep ultraviolet and long wave infrared regions. ### Claim 5 (depends on 1) The detector of claim 1, wherein matrix material comprises a conductive contact material having ohmic or Schottky barrier properties with respect to the embedded nano-particles. ### Claim 6 (depends on 1) The detector of claim 1, wherein the nano-particles comprise semiconductor material, and the matrix material comprises a conductive contact material having ohmic or Schottky barrier properties with respect to the embedded nano-particles. ### Claim 7 (depends on 1) The detector of claim 1, wherein the nano-particles comprise at least one of a metal, a semiconductor, a doped oxide, or graphene, and the matrix material comprises at least one of a Group IV, a Group II-VI, or a Group III-V semiconductor material. ### Claim 8 (depends on 7) The detector of claim 7, wherein the nano-particles comprise gold. ### Claim 9 (depends on 1) The detector of claim 1, wherein each group of nano-particles is arranged to optimally detect EMR in a different wavelength range. ### Claim 10 (depends on 9) The detector of claim 9, wherein the detector elements are vertically spaced with respect to each other. ### Claim 11 (depends on 9) The detector of claim 9, wherein the detector elements are horizontally spaced with respect to each other. ### Claim 12 (depends on 9) The detector of claim 9, wherein the different wavelength ranges include ranges inclusively between the deep ultraviolet and Terahertz regions. ### Claim 13 (depends on 9) The detector of claim 9, wherein one of the detector elements is arranged to optimally detect EMR in the long wave infrared region, the one of the detector elements being sandwiched between a vacuum or aerogel layer. ### Claim 14 (depends on 1) The detector of claim 1, wherein each group of nano-particles is arranged to optimally detect EMR with a different polarization direction. ### Claim 15 (depends on 9) The detector of claim 9, wherein each group of nano-particles is arranged to optimally detect EMR with a different polarization direction. ### Claim 16 (depends on 1) The detector of claim 1, wherein the matrix material comprises a heterojunction, and the nano-particles are embedded in or adjacent to the heterojunction. ### Claim 17 (depends on 1) The detector of claim 1, wherein the voltage biasing element comprises a first electrode on a first side of the matrix material and a second electrode on a second side of the matrix material, the nano-particles arranged between the first and second matrix material. ### Claim 18 (depends on 1) The detector of claim 1, where the EMR absorption region comprises one of a p-n region, a p-i-n region, or a π-region. ### Claim 19 (depends on 1) The detector of claim 1, wherein the detector is a solar cell. ### Claim 20 (depends on 1) The detector of claim 1, wherein the detector is a focal plane array. ### Claim 21 (depends on 1) The detector of claim 1, wherein the shape of the nano-particles is one of cylindrical, spherical, cubic, rectangular-cubic, ellipsoidal, planar, near-planar or spiral-twisted. ### Claim 22 (depends on 1) The detector of claim 1, wherein the nano-particle sizes are in the region between a characteristic dimension of 0.1 nm to 2000 nm.