# US 8,772,524 B2 · CVD precursors

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- Number: US 8,772,524 B2
- Document ID: US8772524B2
- Status: Granted
- Kind: B2
- Application number: 13/122,745
- Filed: 2009-08-11
- Published: 2011-08-11
- Granted: 2014-07-08
- Earliest claimed: 2008-10-20
- Assignees: Dow Corning Corporation
- Applicants: Xiaobing Zhou
- Inventors: Xiaobing Zhou
- Web page: https://patentgrep.com/patent/US8772524B2

## CPC

- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- B05D 1/62: {Plasma-deposition of organic layers (plasma deposition in general C23C14/00, C23C16/00)}
- C23C 16/30: Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C 16/345: {Silicon nitride}
- C23C 16/36: Carbonitrides
- C23C 16/401: {containing silicon}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- H10P 14/6905: {being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6687: {the compound comprising silicon and nitrogen}
- H10P 14/6689: {the compound being a silazane}
- H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B05D: PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (conveying articles or workpieces through baths of liquid B65G, e.g. B65G49/02)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A method of producing silicon containing thin films by the thermal polymerization of a reactive gas mixture bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof. The films deposited may be silicon nitride, silicon carbonitride, silicon dioxide or carbon doped silicon dioxide. These films are useful as dielectrics, passivation coatings, barrier coatings, spacers, liners and/or stressors in semiconductor devices.

## Claims

### Claim 1

A method for producing silicon containing films on a substrate wherein the method comprises the thermal polymerization of a reactive gas mixture comprising bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof, wherein the bisaminosilacyclobutane is selected from
where each R1, R2, R3, R4, R5 and R6 is independently selected from hydrogen and monovalent hydrocarbon group having 1 to 6 carbons and where m, n have a value of 0 to 10.

### Claim 2 (depends on 1)

The method as claimed in claim 1 wherein the bisaminosilacyclobutane is Bis(pyrrolidino)silacyclobutane.

### Claim 3 (depends on 1)

The method as claimed in claim 1 wherein the source gas is a nitrogen providing gas selected from nitrogen N2, ammonia NH3, hydrazine N2H4, hydrazoic acid HN3, and mixtures thereof.

### Claim 4 (depends on 1)

The method as claimed in claim 1 wherein there is 0.1 to 50 volume parts of nitrogen providing gas per volume part of bisaminosilacyclobutane.

### Claim 5 (depends on 1)

The method as claimed in claim 1 wherein the source gas is ammonia.

### Claim 6 (depends on 1)

The method as claimed in claim 1 wherein the source gas is an oxygen providing gas and there is 0.1 to 50 volume parts of oxygen providing gas per volume part of bisaminosilacyclobutane.

### Claim 7 (depends on 1)

The method as claimed in claim 1 wherein there is also present a material selected from carrier gases, dopants, halogens and halogen-containing gases.

### Claim 8 (depends on 1)

The method as claimed in claim 1 wherein the substrate is a semiconductor substrate.

### Claim 9 (depends on 1)

The method as claimed in claim 1 wherein the thermal polymerization is carried out by low pressure chemical vapor deposition or by atomic layer deposition.

### Claim 10 (depends on 1)

The method as claimed in claim 1 wherein the film deposited is a silicon carbonitride film, a silicon nitride film, a silicon oxide film, or a carbon doped silicon dioxide film.

### Claim 11 (depends on 1)

The method as claimed in claim 1 wherein the film deposited has a thickness of 0.01 to 10 μm.

### Claim 12

A composition comprising Bis(pyrrolidino)silacyclobutane.