# US 8,772,179 B2 · Pattern forming method, pattern forming apparatus, and method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,179 B2 - Document ID: US8772179B2 - Status: Granted - Kind: B2 - Application number: 13/607,504 - Filed: 2012-09-07 - Published: 2013-08-22 - Granted: 2014-07-08 - Earliest claimed: 2012-02-20 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kazuya Fukuhara; Masayuki Hatano - Inventors: Kazuya Fukuhara; Masayuki Hatano - Web page: https://patentgrep.com/patent/US8772179B2 ## CPC - B29C 43/021: {characterised by the shape of the surface} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - B82Y 40/00: Manufacture or treatment of nanostructures - G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping} - H10W 74/016: {using moulds} - B29C 2043/025: {forming a microstructure, i.e. fine patterning} - B29C: SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING (making preforms B29B11/00; making laminated products by combining previously unconnected layers which become one product whose layers will remain together B32B37/00 - B32B41/00) - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract According to one embodiment, a pattern forming method using a template containing a pattern that has at least one recess section or protrusion section to transfer the shape of the pattern to a resin layer on a substrate, is provided. The method includes a process for coating the resin on the substrate, a process for making the hardness of the first portion as a portion of the resin higher than the hardness of the second portion as the portion other than the first portion, and a process in which the portion other than the pattern of the template makes contact with the first portion, in a state where a gap is maintained between the template and the resin, the shape of the pattern is transferred to the second portion, and the resin is cured. Embodiments of an apparatus for pattern forming are also provided. ## Claims ### Claim 1 A pattern forming method using a template containing a base and a pattern that has at least one of a recess or at least one protrusion forming a pattern that is transferred into a resin on a substrate resulting in a reverse image of the pattern being formed on the substrate, the pattern forming method comprising: coating the resin on the substrate; adjusting a hardness of the resin so that the hardness of a first portion of the resin is greater than the hardness of a second portion of the resin; maintaining a gap between a base of the template and the substrate by bringing the first portion into contact with a portion of the template that does not include the pattern region; transferring the pattern region to the second portion of the resin; and curing the resin to completion. ### Claim 2 (depends on 1) The pattern forming method according to claim 1, wherein maintaining the gap between the base of the template and the substrate comprises: pressing the template toward the resin to bring the portion of the template into contact with the first portion; measuring an opposing force exerted on the template by the contacting; and stopping the pressing when the opposing force reaches a predetermined value. ### Claim 3 (depends on 1) The pattern forming method according to claim 1, wherein adjusting the hardness of the resin comprises: complete curing of only the first portion of the resin and the semi-curing of the overall resin. ### Claim 4 (depends on 1) The pattern forming method according to claim 1, wherein adjusting the hardness of the resin comprises: completely curing of only the first portion of the resin while the second portion of the resin is semi-cured. ### Claim 5 (depends on 1) The pattern forming method according to claim 1, wherein curing the resin comprises the detachment of the template from the resin after the resin is semi-cured and after the pattern makes contact with the resin. ### Claim 6 (depends on 1) The pattern forming method according to claim 1, wherein curing the resin comprises the transfer of the pattern to the resin and, after the detachment of the template from the resin, completely curing the resin. ### Claim 7 A pattern forming method using a template containing a pattern comprising at least one protrusion and at least one recess forming a pattern region that is transferred into a resin on a substrate resulting in a reverse image of the pattern of the pattern region on the substrate, the pattern forming method comprising: coating the resin on the substrate; curing a first portion of the resin and the partial curing of a second portion of the resin; moving the template and/or the substrate toward one another to provide contact with the first portion of the resin and a portion of the template that does not include the pattern region; measuring an opposing force exerted on the template during the contacting; stopping the moving when the opposing force reaches a predetermined value, such that a gap is formed between the template and the substrate; transferring the pattern region to the second portion of the resin; and curing the resin to completion. ### Claim 8 (depends on 7) The pattern forming method according to claim 7, further comprising curing the first portion of the resin to completion before moving the template and/or the substrate with respect to each other. ### Claim 9 (depends on 8) The pattern forming method according to claim 8, wherein, during the pressing, the portion of the template contacting the first portion of the resin comprises one or more projections extending from a main surface of a base of the template. ### Claim 10 (depends on 9) The pattern forming method according to claim 9, wherein the one or more projections are positioned outside of the pattern region. ### Claim 11 (depends on 10) The pattern forming method according to claim 10, wherein the one or more projections comprises a single first projection defining a rectangular shape. ### Claim 12 (depends on 9) The pattern forming method according to claim 9, wherein the one or more projections comprises a single projection defining a rectangular shape between within a portion of the pattern region. ### Claim 13 (depends on 7) The pattern forming method according to claim 7, wherein, during the pressing, the portion of the template contacting the first portion of the resin comprises a main surface of a base of the template. ### Claim 14 (depends on 7) The pattern forming method according to claim 7, wherein the partially curing the resin comprises curing the resin to about 25% to about 75% before the complete curing of the second portion of the resin. ### Claim 15 A method for manufacturing a semiconductor device, the method comprising a pattern forming method using a template containing a base and a pattern that has at least one of a recess or at least one protrusion forming a pattern region that is transferred onto a resin on a substrate resulting in a reverse image of the pattern region on the substrate, the pattern forming method comprising: coating the resin on the substrate; adjusting a hardness of the resin so that the hardness of a first portion of the resin is greater than the hardness of a second portion of the resin; maintaining a gap between a base of the template and the substrate by bringing the first portion into contact with a portion of the template that does not include the pattern region; transferring the pattern region to the second portion of the resin; and curing the resin. ### Claim 16 A method for manufacturing a semiconductor device, the method comprising a pattern forming method using a template containing a pattern comprising at least one protrusion or at least one depression forming a pattern region that is transferred onto a resin on a substrate resulting in a reverse image of the pattern region on the substrate, the pattern forming method comprising: coating the resin on the substrate; partially curing the resin; completely curing a first portion of the resin and partially curing of a second portion of the resin; moving the template and/or the substrate towards one another to provide contact between the first portion of the resin and a portion of the template that does not include the pattern region; measuring an opposing force exerted on the template during the contacting; stopping the moving when the opposing force reaches a predetermined value, such that a gap is formed between the template and the substrate; transferring the pattern region to the second portion; and completely curing the second portion of the resin.