# US 8,772,161 B2 · Annealing copper interconnects

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,772,161 B2
- Document ID: US8772161B2
- Status: Granted
- Kind: B2
- Application number: 13/205,063
- Filed: 2011-08-08
- Published: 2013-02-14
- Granted: 2014-07-08
- Earliest claimed: 2011-08-08
- Assignees: International Business Machines Corporation
- Applicants: Cyril Cabral, Jr.; Gregory M. Fritz; Christian Lavoie; Conal E. Murray; Kenneth P Rodbell
- Inventors: Cyril Cabral, Jr.; Gregory M. Fritz; Christian Lavoie; Conal E. Murray; Kenneth P Rodbell
- Web page: https://patentgrep.com/patent/US8772161B2

## CPC

- H10D 30/0212: {using self-aligned silicidation}
- H10D 64/0112: {using conductive layers comprising silicides}
- H10D 86/01: Manufacture or treatment
- H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)}
- H10W 20/064: {by modifying the conductivity of conductive parts, e.g. by alloying}
- H10W 20/097: {by thermally treating}
- H10D 84/017: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D 84/0177: {the gate conductors having different materials or different implants}
- H10D 84/0186: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method for modifying the chemistry or microstructure of silicon-based technology via an annealing process is provided. The method includes depositing a reactive material layer within a selected proximity to an interconnect, igniting the reactive material layer, and annealing the interconnect via heat transferred from the ignited reactive material layer. The method can also be implemented in connection with a silicide/silicon interface as well as a zone of silicon-based technology.

## Claims

### Claim 1

A method for annealing an interconnect, comprising:
depositing a reactive material layer within a selected proximity to an interconnect, wherein the interconnect is copper or copper-based;
igniting the reactive material layer; and
annealing the interconnect via heat transferred from the ignited reactive material layer.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
removing the reactive material layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein removing the reactive material layer comprises implementing at least one of a mechanical polish, a chemical etch, a chemical-mechanical polish, and a chemical etch of an underlayer below the reactive material.

### Claim 4 (depends on 1)

The method of claim 1, wherein the reactive material layer confines an area to be annealed to a pre-determined region by patterning.

### Claim 5 (depends on 1)

The method of claim 1, wherein annealing the interconnect via heat transferred from the ignited reactive material layer comprises generating grain growth.

### Claim 6 (depends on 1)

The method of claim 1, wherein the reactive material layer comprises one or more layered metallic, semi-metallic, or oxide reactants.

### Claim 7 (depends on 6)

The method of claim 6, wherein the one or more layered metallic, semi-metallic, or oxide reactants comprises Ni/Al, Si/Cr or SiO2/Al.

### Claim 8 (depends on 1)

The method of claim 1, wherein the reactive material layer comprises of one or more layers of metallic reactants with a repeat period ranging from 1 nm to 15 μm.

### Claim 9 (depends on 1)

The method of claim 1, wherein the reactive material layer is deposited above the interconnect, beneath the interconnect, or around the interconnect.

### Claim 10 (depends on 1)

The method of claim 1, wherein igniting the reactive material layer comprises igniting the reactive layer via one of a laser pulse and an electrical pulse.

### Claim 11

A method for modifying a silicide/silicon interface without damaging a metal gate, comprising:
depositing a reactive material layer within a selected proximity to the silicide/silicon interface;
igniting the reactive material layer; and
annealing the silicide/silicon interface via heat transferred from the ignited reactive material layer.

### Claim 12 (depends on 11)

The method of claim 11, further comprising:
selecting a reactive material system with an appropriate heat such that the silicide/silicon interface can be engineered without damaging a metal gate.

### Claim 13 (depends on 11)

The method of claim 11, wherein the reactive material layer confines an area to be annealed to a pre-determined region by patterning.

### Claim 14 (depends on 11)

The method of claim 11, wherein the reactive material layer comprises one or more layered metallic, semi-metallic, or oxide reactants.

### Claim 15 (depends on 14)

The method of claim 14, wherein the one or more layered metallic, semi-metallic, or oxide reactants comprises Ni/Al, Cu/Pd, Si/Cr or SiO2/Al.

### Claim 16 (depends on 11)

The method of claim 11, wherein the reactive material layer comprises of one or more layers of metallic reactants with a repeat period ranging from 1 nm to 15 μm.

### Claim 17 (depends on 11)

The method of claim 11, wherein the reactive material layer is deposited above the silicide/silicon interface.

### Claim 18 (depends on 11)

The method of claim 11, further comprising:
removing the reactive material layer.

### Claim 19 (depends on 18)

The method of claim 18, wherein removing the reactive material layer comprises implementing at least one of a mechanical polish, a chemical etch, a chemical-mechanical polish, and a chemical etch of an underlayer below the reactive material.

### Claim 20

A method for annealing a zone of silicon-based technology, comprising:
depositing a reactive material layer within a selected proximity to a zone of a silicon-based component to be annealed;
igniting the reactive material layer; and
annealing the zone of the silicon-based component to be annealed via heat transferred from the ignited reactive material layer.

### Claim 21 (depends on 20)

The method of claim 20, wherein annealing the zone of the silicon-based component comprises annealing the zone without excessively heating a nearby material that would be adversely affected by heating.

### Claim 22 (depends on 20)

The method of claim 20, further comprising:
removing the reactive material layer.

### Claim 23 (depends on 22)

The method of claim 22, wherein removing the reactive material layer comprises implementing at least one of a mechanical polish, a chemical etch, a chemical-mechanical polish, and a chemical etch of an underlayer below the reactive material.