# US 8,772,153 B2 · Semiconductor device with air gap therein and manufacturing method thereof

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- Number: US 8,772,153 B2
- Document ID: US8772153B2
- Status: Granted
- Kind: B2
- Application number: 13/423,081
- Filed: 2012-03-16
- Published: 2013-01-24
- Granted: 2014-07-08
- Earliest claimed: 2011-07-19
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Takashi Furuhashi; Miyoko Shimada; Ichiro Mizushima; Shinichi Nakao
- Inventors: Takashi Furuhashi; Miyoko Shimada; Ichiro Mizushima; Shinichi Nakao
- Web page: https://patentgrep.com/patent/US8772153B2

## CPC

- H10W 20/46: comprising air gaps
- H10P 95/062: {involving a dielectric removal step}
- H10W 20/063: {by forming conductive members before forming protective insulating material}
- H10W 20/072: {of dielectric parts comprising air gaps}
- H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In accordance with an embodiment, a semiconductor device includes a substrate, a line-and-space structure, a first film and a second film. The line-and-space structure includes line patterns arranged on the substrate parallel to one another at a predetermined distance. The first film is formed on side surfaces and bottom surfaces of the line patterns by an insulating film material. The second film is formed on the line-and-space structure across a space between the line patterns by a material showing low wettability to the first film. Space between the line patterns includes an air gap in which at least a bottom surface of the first film is totally exposed.

## Claims

### Claim 1

A semiconductor device manufacturing method comprising:
forming a line-and-space structure on a substrate;
forming a first film on a sidewall and upper surface of a line of the line-and-space structure by an insulating film material to have a thickness less than half of a width of a space;
selectively removing the first film to expose a top surface of the line while having the first film remain on the sidewall;
covering the line-and-space structure by a coating film forming method with a material showing low wettability to the first film to form a second film which extends across the line-and-space structure and is in direct contact with the entire to surface of the line; and
hardening the second film by a heat treatment.

### Claim 2 (depends on 1)

The method of claim 1, further comprising
filling the space with a material showing high wettability to the first film to form a third film before selectively removing the first film; and
removing the third film before forming the second film,
wherein the top surface of the line-and-space structure is exposed by selectively removing the first film after the third film is removed.

### Claim 3 (depends on 2)

The method of claim 2,
wherein a part of the third film on the line-and-space structure is selectively removed before the formation of the second film, and
a rest of the third film is removed after the top surface of the line-and-space structure is exposed.

### Claim 4 (depends on 1)

The method of claim 1,
wherein a contact angle between the low-wettability material and the first film substantially ranges from 60 degrees to 90 degrees.

### Claim 5 (depends on 2)

The method of claim 2,
wherein a contact angle between the third film and the first film substantially ranges from 40 degrees to 45 degrees.

### Claim 6 (depends on 1)

The method of claim 1,
wherein the first film is formed by an organic film, an insulating film containing carbon, or a material with a low dielectric constant.

### Claim 7 (depends on 6)

The method of claim 6,
wherein a relative dielectric constant of the low-dielectric-constant material substantially ranges from 2.5 to 3.5.

### Claim 8 (depends on 1)

The method of claim 1,
wherein the first film is an MSQ film.

### Claim 9 (depends on 1)

The method of claim 1,
wherein a line pattern of the line-and-space structure comprises a metal wiring line, and a first insulating film on the metal wiring line.

### Claim 10 (depends on 9)

The method of claim 9,
further comprising forming a second insulating film between the substrate and the line-and-space structure.