# US 8,772,150 B2 · Method of forming p-type ZnO film

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- Number: US 8,772,150 B2
- Document ID: US8772150B2
- Status: Granted
- Kind: B2
- Application number: 13/712,127
- Filed: 2012-12-12
- Published: 2013-10-03
- Granted: 2014-07-08
- Earliest claimed: 2012-03-28
- Assignees: Gwangju Institute of Science and Technology
- Applicants: Gwangju Institute of Science and Technology
- Inventors: Seong Ju Park; Yong Seok Choi; Jang Won Kang
- Web page: https://patentgrep.com/patent/US8772150B2

## CPC

- H10P 14/3252: {Alternating layers, e.g. superlattice}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3226: {Oxides}
- H10P 14/3234: {being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224)}
- H10P 14/3426: {Oxides}
- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10P 14/3444: {P-type}
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed herein is a method of forming a p-type zinc oxide thin film. A zinc oxide layer and an antimony oxide layer are alternately stacked one above another on a substrate, forming a superlattice layer. The superlattice layer is modified into a p-type zinc oxide thin film by annealing. Upon annealing, zinc atoms of the zinc oxide layer are diffused into the antimony oxide layer and antimony atoms of the antimony oxide layer are diffused into the zinc oxide layer.

## Claims

### Claim 1

A method of forming a p-type zinc oxide thin film, comprising:
forming a superlattice layer in which a zinc oxide layer and an antimony oxide layer are alternately stacked; and
annealing the superlattice layer to modify the superlattice layer into a p-type zinc oxide thin film.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the zinc oxide layer has a thickness greater than that of the antimony oxide layer.

### Claim 3 (depends on 2)

The method according to claim 2, wherein the thickness of the zinc oxide layer ranges from 2 nm to 4 nm.

### Claim 4 (depends on 3)

The method according to claim 3, wherein the thickness of the antimony oxide layer ranges from 0.5 nm to 2 nm.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the annealing is carried out to allow zinc atoms of the zinc oxide layer to be diffused into the antimony oxide layer and to allow antimony atoms of the antimony oxide layer to be diffused into the zinc oxide layer.

### Claim 6 (depends on 5)

The method according to claim 5, wherein the annealing is carried out at a temperature ranging from 250° C. to 550° C.

### Claim 7 (depends on 6)

The method according to claim 6, wherein the annealing is carried out for 30 seconds to 5 minutes.

### Claim 8 (depends on 1)

The method according to claim 1, wherein an uppermost layer of the superlattice layer is the zinc oxide layer.