# US 8,772,147 B2 · Spacer structures of a semiconductor device

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- Number: US 8,772,147 B2
- Document ID: US8772147B2
- Status: Granted
- Kind: B2
- Application number: 14/032,811
- Filed: 2013-09-20
- Published: 2014-01-16
- Granted: 2014-07-08
- Earliest claimed: 2010-07-29
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Lee-Wee Teo; Ming Zhu; Hui-Wen Lin; Bao-Ru Young; Harry-Hak-Lay Chuang
- Web page: https://patentgrep.com/patent/US8772147B2

## CPC

- H10D 64/01: Manufacture or treatment
- H10D 84/0133: {Manufacturing common source or drain regions between multiple IGFETs}
- H10D 84/0147: {Manufacturing their gate sidewall spacers}
- H10D 84/017: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D 84/0184: {Manufacturing their gate sidewall spacers}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/83: of only insulated-gate FETs [IGFET]
- H10D 84/8311: {the IGFETs characterised by having different channel structures}
- H10D 84/8312: {the IGFETs characterised by having different source or drain region structures, e.g. IGFETs having symmetrical source or drain regions integrated with IGFETs having asymmetrical source or drain regions}
- H10D 84/83125: {the IGFETs characterised by having shared source or drain regions}
- H10D 84/83138: {the IGFETs characterised by having different shapes or dimensions of their gate conductors}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method of fabricating a semiconductor device includes forming a first set of gate electrodes over a substrate, adjacent gate electrodes of the first set of gate electrodes being separated by a first gap width, and having a first gate width. The method includes forming a second set of gate electrodes over the substrate, adjacent gate electrodes of the second set of gate electrodes being separated by a second gap width less than the first gap width, and having a second gate width greater than the first gate width. The method further includes forming a first set of spacer structures on sidewalls of the first and second sets of gate electrodes. The method further includes forming a second set of spacer structures abutting the first set of spacer structures and removing a subset of the second set of spacer structures over the sidewalls of the second set of gate electrodes.

## Claims

### Claim 1

A method of fabricating a semiconductor device, comprising:
forming a first set of gate electrodes over a substrate, adjacent gate electrodes of the first set of gate electrodes being separated by a first gap width, and each gate electrode of the first set of gate electrodes having a first gate width;
forming a second set of gate electrodes over the substrate, adjacent gate electrodes of the second set of gate electrodes being separated by a second gap width less than the first gap width, and each gate electrode of the second set of gate electrodes having a second gate width greater than the first gate width;
forming a first set of spacer structures on sidewalls of the first and second sets of gate electrodes;
forming a second set of spacer structures abutting the first set of spacer structures; and
removing a subset of the second set of spacer structures over the sidewalls of the second set of gate electrodes.

### Claim 2 (depends on 1)

The method of claim 1, wherein the formation of the first set of spacer structures comprises:
forming an oxygen-sealing layer on the sidewalls of the first and second sets of gate electrodes; and
forming an oxygen-containing layer abutting the oxygen-sealing layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein the formation of the first set of spacer structures further comprises:
removing a portion of the oxygen-sealing layer on top surfaces of the first and second sets of gate electrodes prior to the formation of the oxygen-containing layer.

### Claim 4 (depends on 1)

The method of claim 1, wherein the formation of the second set of spacer structures comprises:
forming an oxygen-sealing layer abutting the first set of spacer structures.

### Claim 5 (depends on 4)

The method of claim 4, wherein the formation of the second set of spacer structures further comprises:
removing a portion of the first set of spacer structures on top surfaces of the first and second sets of gate electrodes prior to the formation of the second set of spacer structures.

### Claim 6 (depends on 4)

The method of claim 4, further comprising:
thinning the oxygen-sealing layer over the sidewalls of the first set of gate electrodes.

### Claim 7 (depends on 1)

The method of claim 1, wherein the removal of the subset of the second set of spacer structures over the sidewalls of the second set of gate electrodes is performed using a wet etching process.

### Claim 8 (depends on 7)

The method of claim 7, wherein the wet etching process is performed using a phosphoric acid treatment.

### Claim 9

A method of fabricating a semiconductor device, comprising:
forming a plurality of first gate electrodes arranged according to a gate pitch over a substrate, each first gate electrode having a first width;
forming a plurality of second gate electrodes arranged according to the gate pitch over the substrate, each second gate electrode having a second width greater than the first width;
forming a first set of spacer structures, each having a first spacer width, on sidewalls of the plurality of first gate electrodes; and
forming a second set of spacer structures, each having a second spacer width less than the first spacer width, on sidewalls of the plurality of second gate electrodes.

### Claim 10 (depends on 9)

The method of claim 9, wherein the formation of the first set of spacer structures comprises:
depositing a first oxygen-sealing layer on the sidewalls of the plurality of the first gate electrodes;
depositing an oxygen-containing layer abutting the first oxygen-sealing layer; and
depositing a second oxygen-sealing layer abutting the oxygen-containing layer.

### Claim 11 (depends on 10)

The method of claim 10, further comprising:
thinning the second oxygen-sealing layer.

### Claim 12 (depends on 9)

The method of claim 9, wherein the formation of the second set of spacer structures comprises:
depositing a first oxygen-sealing layer on the sidewalls of the plurality of the second gate electrodes;
depositing an oxygen-containing layer abutting the first oxygen-sealing layer;
depositing a second oxygen-sealing layer abutting the oxygen-containing layer; and
removing the second oxygen-sealing layer.

### Claim 13 (depends on 12)

The method of claim 12, wherein the removal of the second oxygen-sealing layer is performed by using a wet etching process.

### Claim 14

A method of fabricating a semiconductor device, comprising:
forming a first set of gate electrodes over a substrate, adjacent gate electrodes of the first set of gate electrodes having a gate pitch and being separated by a first gap width, and each gate electrode of the first set of gate electrodes having a first gate width;
forming a second set of gate electrodes over the substrate, adjacent gate electrodes of the second set of gate electrodes having the gate pitch and being separated by a second gap width less than the first gap width, and each gate electrode of the second set of gate electrodes having a second gate width greater than the first gate width; (paragraph 0022)
forming a first set of spacer structures on sidewalls of the first and second sets of gate electrodes;
forming a second set of spacer structures abutting the first set of spacer structures; and
removing a subset of the second set of spacer structures over the sidewalls of the second set of gate electrodes.

### Claim 15 (depends on 14)

The method of claim 14, wherein the forming the first set of gate electrodes comprises forming the first gate width ranging from about 10 nanometers (nm) to about 30 nm.

### Claim 16 (depends on 14)

The method of claim 14, wherein the forming the second set of gate electrodes comprises forming the second gate width ranging from about 12 nm to about 40 nm.

### Claim 17 (depends on 14)

The method of claim 14, wherein the forming the first set of gate electrodes comprises forming the first gap width ranging from about 30 nm to about 100 nm.

### Claim 18 (depends on 14)

The method of claim 14, wherein the forming the second set of gate electrodes comprises forming the second gap width ranging from about 28 nm to about 90 nm.

### Claim 19 (depends on 14)

The method of claim 14, wherein the forming the second set of spacer structures comprises:
forming an oxygen-containing layer abutting the first set of spacer structures; and
forming an oxygen sealing layer abutting the oxygen-containing layer.

### Claim 20 (depends on 19)

The method of claim 19, wherein removing the subset of the second set of spacer structures comprises removing the oxygen sealing layer.