# US 8,772,142 B2 · Ion implantation method and ion implantation apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,142 B2 - Document ID: US8772142B2 - Status: Granted - Kind: B2 - Application number: 13/426,423 - Filed: 2012-03-21 - Published: 2012-09-27 - Granted: 2014-07-08 - Earliest claimed: 2011-03-23 - Assignees: Sen Corporation - Applicants: Shiro Ninomiya; Tetsuya Kudo; Akihiro Ochi - Inventors: Shiro Ninomiya; Tetsuya Kudo; Akihiro Ochi - Web page: https://patentgrep.com/patent/US8772142B2 ## CPC - H10P 30/20: into semiconductor materials, e.g. for doping - C23C 14/48: Ion implantation - C23C 14/542: {Controlling the film thickness or evaporation rate} - H01J 37/3007: {Electron or ion-optical systems} - H01J 37/3023: {Program control} - H01J 37/3171: {for ion implantation} - H01J 37/3172: {Maskless patterned ion implantation} - H01J 2237/30483: Scanning - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts. ## Claims ### Claim 1 An ion implantation method comprising: reciprocally scanning an ion beam; mechanically scanning a wafer in a direction perpendicular to an ion beam scanning direction; implanting ions into the wafer; and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by performing speed control of a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in a mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts. ### Claim 2 (depends on 1) The ion implantation method according to claim 1, wherein, when the speed control is performed, in relation to a beam scanning speed correction amount in the ion beam scanning direction and a wafer scanning speed correction amount in the mechanical scanning direction, a distance from a wafer center is used as a variable, and a sum of or a difference between a term proportional to the square of the distance and a constant term is used as a correction amount in calculating one or more of the beam scanning speed correction amount and the wafer scanning speed correction amount. ### Claim 3 (depends on 2) The ion implantation method according to claim 2, wherein, in relation to the beam scanning speed correction amount in the ion beam scanning direction and the wafer scanning speed correction amount in the mechanical scanning direction, a correction amount distribution where proportional constants of the terms proportional to the square of the distance in the ion beam scanning direction and the mechanical scanning direction are the same is used. ### Claim 4 (depends on 1) The ion implantation method according to claim 1, wherein, when the speed control is performed, in relation to a beam scanning speed correction amount in the ion beam scanning direction and a wafer scanning speed correction amount in the mechanical scanning direction, a distance from a wafer center is used as a variable, and a characteristic function created from a sum of or a difference between a term proportional to the square of the distance and a constant term is used as the control function. ### Claim 5 (depends on 4) The ion implantation method according to claim 4, wherein, in relation to the beam scanning speed correction amount in the ion beam scanning direction and the wafer scanning speed correction amount in the mechanical scanning direction, a characteristic function where proportional constants of the terms proportional to the square of the distance in the ion beam scanning direction and the mechanical scanning direction are the same is used. ### Claim 6 (depends on 1) The ion implantation method according to claim 1, wherein, when the speed control is performed, in relation to a beam scanning speed correction amount in the ion beam scanning direction and a wafer scanning speed correction amount in the mechanical scanning direction, a distance from a wafer center is used as a variable, a sum of or a difference between a term of a cosine function value of a term proportional to the variable and a constant term is used as a correction amount, and a correction amount distribution where proportional constants of the terms proportional to the distance from the wafer center in the ion beam scanning direction and the mechanical scanning direction are the same is used. ### Claim 7 (depends on 1) The ion implantation method according to claim 1, wherein, when the speed control is performed, in relation to a beam scanning speed correction amount in the ion beam scanning direction and a wafer scanning speed correction amount in the mechanical scanning direction, a distance from a wafer center is used as a variable, a characteristic function created from a sum of or a difference between a term of a cosine function value of a term proportional to the variable and a constant term is used as the control function, and a characteristic function where proportional constants of the terms proportional to the distance from the wafer center in the ion beam scanning direction and the mechanical scanning direction are the same is used. ### Claim 8 (depends on 1) The ion implantation method according to claim 1, wherein the ion implantation amount distribution in the wafer surface of the isotropic concentric circle shape is an ion implantation amount distribution in the wafer surface of the isotropic concentric circle shape where there is no angular direction dependency of the ion implantation amount in the wafer surface. ### Claim 9 An ion implantation apparatus which implants ions into a wafer, comprising a control system that reciprocally scans an ion beam and mechanically scans the wafer in a direction perpendicular to an ion beam scanning direction, wherein the control system generates an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by performing speed control of a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in a mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts. ### Claim 10 (depends on 1) The ion implantation method according to claim 1, wherein, when the speed control is performed, an arbitrary point is set in the wafer surface, the point is regarded as a rotation center, and the ion implantation amount distribution in the wafer surface of the isotropic concentric circle shape is generated with respect to the rotation center. ### Claim 11 (depends on 10) The ion implantation method according to claim 10, wherein, in relation to a beam scanning speed correction amount in the ion beam scanning direction and a wafer scanning speed correction amount in the mechanical scanning direction, a distance from an arbitrary point set in the wafer surface is used as a variable, a sum of or a difference between a term proportional to the square of the distance and a constant term is used as a correction amount, and a correction amount distribution where proportional constants of the terms proportional to the square of the distance in the ion beam scanning direction and the mechanical scanning direction are the same is used. ### Claim 12 (depends on 10) The ion implantation method according to claim 10, wherein, in relation to a beam scanning speed correction amount in the ion beam scanning direction and a wafer scanning speed correction amount in the mechanical scanning direction, a distance from an arbitrary point set in the wafer surface is used as a variable, a characteristic function created from a sum of or a difference between a term proportional to the square of the distance and a constant term is used as the control function, and a characteristic function where proportional constants of the terms proportional to the square of the distance in the ion beam scanning direction and the mechanical scanning direction are the same is used. ### Claim 13 (depends on 10) The ion implantation method according to claim 10, wherein, in relation to a beam scanning speed correction amount in the ion beam scanning direction and a wafer scanning speed correction amount in the mechanical scanning direction, a distance from an arbitrary point set in the wafer surface is used as a variable, a sum of or a difference between a term of a cosine function value of a term proportional to the variable and a constant term is used as a correction amount, and a correction amount distribution where proportional constants of the terms proportional to the distance from the arbitrary point in the wafer surface in the ion beam scanning direction and the mechanical scanning direction are the same is used. ### Claim 14 (depends on 10) The ion implantation method according to claim 10, wherein, in relation to a beam scanning speed correction amount in the ion beam scanning direction and a wafer scanning speed correction amount in the mechanical scanning direction, a distance from an arbitrary point set in the wafer surface is used as a variable, a characteristic function created from a sum of or a difference between a term of a cosine function value of a term proportional to the variable and a constant term is used as a control function, and a characteristic function where proportional constants of the terms proportional to the distance from the arbitrary point in the wafer surface in the ion beam scanning direction and the mechanical scanning direction are the same is used. ### Claim 15 (depends on 9) The ion implantation apparatus according to claim 9, wherein the control system sets an arbitrary point in the wafer surface, regards the point as a rotation center, and generates the ion implantation amount distribution in the wafer surface of the isotropic concentric circle shape with respect to the rotation center. ### Claim 16 (depends on 1) The ion implantation method according to claim 1, wherein the step of implanting ions into the wafer comprises intentionally implanting ions in a pattern, the implanting ions step being performed in a single step without using a step rotation of the wafer.