# US 8,772,138 B2 · High voltage light emitting diode chip and its manufacturing method

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,772,138 B2
- Document ID: US8772138B2
- Status: Granted
- Kind: B2
- Application number: 13/465,077
- Filed: 2012-05-07
- Published: 2013-08-22
- Granted: 2014-07-08
- Earliest claimed: 2012-02-17
- Assignees: Walsin Lihwa Corporation
- Applicants: Chih-Wei Yang; Ching-Hwa Chang Jen
- Inventors: Chih-Wei Yang; Ching-Hwa Chang Jen
- Web page: https://patentgrep.com/patent/US8772138B2

## CPC

- H10W 90/00: Package configurations
- H10H 20/01: Manufacture or treatment
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 29/14: comprising multiple light-emitting semiconductor components
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A high voltage light emitting diode chip and its manufacturing method are provided. The high voltage light emitting diode chip can be manufactured by forming a plurality of light emitting diode units on a substrate and electrically connecting the light emitting diode units, wherein a trench with a width of about 0.5 μm to about 7 μm is present between every two adjacent light emitting diode units to isolate the light emitting diode units. The procedure for manufacturing the high voltage light emitting diode chip is simple and the high voltage light emitting diode chip that is produced can exhibit satisfying luminous efficiency.

## Claims

### Claim 1

A method for manufacturing a high voltage light emitting diode chip, comprising:
forming a plurality of light emitting diode units on a substrate, wherein a trench with a width of about 0.5 μm to about 7 μm is present between every two adjacent light emitting diode units to isolate the light emitting diode units;
forming an insulating structure on the periphery of each light emitting diode unit; and
electrically connecting the light emitting diode units.

### Claim 2 (depends on 1)

The method of claim 1, wherein the trench has the width of about 0.5 μm to about 5 μm.

### Claim 3 (depends on 1)

The method of claim 1, wherein the trench is formed by a laser-cutting step.

### Claim 4 (depends on 3)

The method of claim 3, which further comprises a trench-washing step after the laser-cutting step.

### Claim 5

A high voltage light emitting diode chip, comprising:
a substrate;
a plurality of light emitting diode units positioned on the substrate and electrically connected to each other;
a trench formed between the every two adjacent light emitting diode units; and
an insulating structure formed in the trench,
wherein the trench has a width of about 0.5 μm to about 7 μm.

### Claim 6 (depends on 5)

A light emitting diode device, comprising:
a carrier plate; and
a high voltage light emitting diode chip of claim 5, packaged on the carrier plate.

### Claim 7 (depends on 5)

The high voltage light emitting diode chip of claim 5, wherein the trench has the width of about 0.5 μm to about 5 μm.

### Claim 8 (depends on 7)

A light emitting diode device, comprising:
a carrier plate; and
a high voltage light emitting diode chip of claim 7, packaged on the carrier plate.

### Claim 9 (depends on 5)

The high voltage light emitting diode chip of claim 5, wherein each light emitting diode unit comprises:
a first semiconductor structure positioned on the substrate; and
a second semiconductor structure positioned on the first semiconductor structure;
wherein the trench has a depth being equal to or greater than a thickness of the first semiconductor structure.

### Claim 10 (depends on 9)

The high voltage light emitting diode chip of claim 9, wherein each light emitting diode unit further comprises a conducting structure positioned on the second semiconductor structure as a joint for the electrical connection.

### Claim 11 (depends on 9)

A light emitting diode device, comprising:
a carrier plate; and
a high voltage light emitting diode chip of claim 9, packaged on the carrier plate.

### Claim 12 (depends on 9)

The high voltage light emitting diode chip of claim 9, wherein the depth of the trench is greater than the thickness of the first semiconductor structure by about 10 μm to about 15 μm.

### Claim 13 (depends on 12)

A light emitting diode device, comprising:
a carrier plate; and
a high voltage light emitting diode chip of claim 12, packaged on the carrier plate.

### Claim 14 (depends on 9)

The high voltage light emitting diode chip of claim 9, wherein the materials of the first semiconductor structure and the second semiconductor structure are independently selected from the group consisting of GaN, InGaN, GaAs and combinations thereof.

### Claim 15 (depends on 14)

A light emitting diode device, comprising:
a carrier plate; and
a high voltage light emitting diode chip of claim 14, packaged on the carrier plate.

### Claim 16 (depends on 9)

The high voltage light emitting diode chip of claim 9, wherein the first semiconductor structure is a p-type semiconductor structure, and the second semiconductor structure is an n-type semiconductor structure.

### Claim 17 (depends on 16)

A light emitting diode device, comprising:
a carrier plate; and
a high voltage light emitting diode chip of claim 16, packaged on the carrier plate.

### Claim 18 (depends on 9)

The high voltage light emitting diode chip of claim 9, wherein the first semiconductor structure is an n-type semiconductor structure, and the second semiconductor structure is a p-type semiconductor structure.

### Claim 19 (depends on 18)

A light emitting diode device, comprising:
a carrier plate; and
a high voltage light emitting diode chip of claim 18, packaged on the carrier plate.