# US 8,772,136 B2 · Method for fabricating semiconductor device

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- Number: US 8,772,136 B2
- Document ID: US8772136B2
- Status: Granted
- Kind: B2
- Application number: 13/483,129
- Filed: 2012-05-30
- Published: 2013-12-05
- Granted: 2014-07-08
- Earliest claimed: 2012-05-30
- Assignees: United Microelectronics Corp.
- Applicants: Chine-Li Wang; Chun-Yen Chen; Wei-Hua Fang; Hung-Hsien Chang; Yung-Chin Yen
- Inventors: Chine-Li Wang; Chun-Yen Chen; Wei-Hua Fang; Hung-Hsien Chang; Yung-Chin Yen
- Web page: https://patentgrep.com/patent/US8772136B2

## CPC

- B81C 1/00873: {characterised by special arrangements of the devices, allowing an easier separation}
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method for fabricating a semiconductor device, wherein the method comprises steps as follows: Firstly, a device wafer is provided and a patterned bonding layer is then formed within a scribe line region of the device wafer. Subsequently a handle wafer is bonded to the device wafer by the patterned bonding layer. Next, a dicing process is performed along the scribe line region in order to divide the device wafer into a plurality of dices and remove the patterned bonding layer simultaneously, whereby the divided dices can be separated from the handle wafer.

## Claims

### Claim 1

A method for fabricating a semiconductor device, comprising steps as follows:
providing a device wafer;
forming a patterned bonding layer in order to align with a scribe line region of the device wafer, wherein the scribe line region has at least one recess, the patterned bonding layer is in contact with a bottom of the recess, and the patterned bonding layer has a thickness substantially greater than a depth of the recess;
bonding a handle wafer to the device wafer by the patterned bonding layer; and
performing a dicing process along the scribe line region in order to divide the device wafer into a plurality of dices and thoroughly remove the patterned bonding layer simultaneously with the dicing process, whereby the divided dices can be separated from the handle wafer.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the formation of the patterned bonding layer comprises:
forming a photo-resist layer on the device wafer; and
performing a photo-resist development process to remove a portion of the photo-resist layer.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the formation of the patterned bonding layer comprises:
forming an adhesive layer on the device wafer; and
performing an etching process to remove a portion of the adhesive layer.

### Claim 4 (depends on 3)

The method according to claim 3, wherein the adhesive layer is a resin layer or a double-sided tape layer.

### Claim 5 (depends on 3)

The method according to claim 3, wherein the adhesive layer is formed by a deposition process, a printing press process or a surface coating process carried out on the scribe line region.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the dicing process is a laser dicing process, a saw-dicing process, an etching process or the arbitrary combinations thereof.

### Claim 7 (depends on 1)

The method according to claim 1, further comprising steps of performing a wafer thinning process, an etching process or a micro-electro-mechanical system (MEMS) process on the device wafer after the handle wafer is bonded to the device wafer and prior to the dicing process.

### Claim 8 (depends on 1)

The method according to claim 1, wherein the step of bonding the handle wafer to the device wafer comprises:
forming at least one integrated circuit (IC) element on a first surface of the device wafer;
bonding a carrier wafer on the first surface of the device wafer; and
bonding the handle wafer to a second surface of the device wafer opposite to the first surface.

### Claim 9 (depends on 8)

The method according to claim 8, wherein the patterned bonding layer is formed on the second surface of the device wafer before the handle wafer is bonded to the device wafer.

### Claim 10 (depends on 8)

The method according to claim 8, further comprising steps of debonding the carrier wafer from the first surface of the device wafer before the dicing process is carried out.

### Claim 11 (depends on 1)

The method according to claim 1, wherein the handle wafer is constituted by a glass substrate, a silicon-on-insulator (SOI) substrate or a semiconductor substrate.