# US 8,772,133 B2 · Utilization of a metallization scheme as an etching mask

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- Number: US 8,772,133 B2
- Document ID: US8772133B2
- Status: Granted
- Kind: B2
- Application number: 13/492,976
- Filed: 2012-06-11
- Published: 2013-12-12
- Granted: 2014-07-08
- Earliest claimed: 2012-06-11
- Assignees: Infineon Technologies AG
- Applicants: Manfred Engelhardt; Martin Zgaga; Karl Adolf Mayer; Gudrun Stranzl
- Inventors: Manfred Engelhardt; Martin Zgaga; Karl Adolf Mayer; Gudrun Stranzl
- Web page: https://patentgrep.com/patent/US8772133B2

## CPC

- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10P 50/692: {characterised by their composition, e.g. multilayer masks or materials}
- H10P 50/694: {characterised by their behaviour during the process, e.g. soluble masks or redeposited masks}
- H10P 50/244: {comprising alternated and repeated etching and passivation steps}
- H10P 50/613: {of Group IV materials}
- H10P 72/74: {using temporarily an auxiliary support}
- H10P 72/7416: {used during dicing or grinding}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The various aspects comprise methods and devices for processing a wafer. An aspect of this disclosure includes a wafer. The wafer comprises a plurality of die regions; a plurality of kerf regions between the plurality of die regions; and a metallization area on the plurality of die regions.

## Claims

### Claim 1

A method of processing a wafer, the method comprising:
providing a wafer having a plurality of die regions and a plurality of kerf regions;
forming a metallization area in the plurality of die regions, the metallization layer having at least an exposed top surface; and
applying a gas composition to the wafer, the gas composition etching away the plurality of kerf regions,
wherein the metallization area is a self-aligning mask for die separation, and
wherein the gas composition reacts at least with the at least exposed to surface of the metallization area to form a passivation layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the gas composition does not etch away the passivation layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the metallization layer is copper.

### Claim 4 (depends on 1)

The method of claim 1, wherein the gas composition comprises fluorine.

### Claim 5 (depends on 1)

The method of claim 1, wherein applying the gas composition comprises:
performing a BOSCH etch process.

### Claim 6 (depends on 1)

The method of claim 1, wherein applying the gas composition comprises:
performing an electrochemical etch.

### Claim 7 (depends on 1)

The method of claim 1, further comprising:
forming interconnects on the wafer before forming the metallization area.

### Claim 8 (depends on 7)

The method of claim 7, further comprising:
forming a seed layer onto the interconnects.

### Claim 9 (depends on 1)

The method of claim 1, further comprising:
identifying that the wafer has been separated into separate dies;
laminating the wafer; and
removing a carrier from the separate dies.

### Claim 10

A wafer comprising:
a plurality of die regions;
a plurality of kerf regions between the plurality of die regions; and
a metallization area on the plurality of die regions, the metallization layer having at least an exposed top surface;
wherein the metallization area is a self-aligning mask for die separation, and
wherein at least the at least exposed top surface of the metallization area is configured to react with a gas composition to form a passivation layer.

### Claim 11 (depends on 10)

The wafer of claim 10, wherein the passivation layer does not etch away when exposed to the gas composition.

### Claim 12 (depends on 1)

The wafer of claim 1, wherein the metallization layer is copper.

### Claim 13 (depends on 1)

The wafer of claim 1, wherein the gas composition comprises fluorine.

### Claim 14

A method of making a semiconductor device, comprising:
providing a semiconductor die with a plurality of die regions and a plurality of kerf regions;
forming a metallization area in the plurality of die regions, the metallization layer having at least an exposed top surface; and
applying a gas composition to the wafer, the gas composition etching away the plurality of kerf regions,
wherein the metallization area is a self-aligning mask for die separation, and
wherein the gas composition reacts at least with the at least exposed top surface of the metallization area to form a passivation layer.