# US 8,772,130 B2 · Manufacturing method of SOI substrate

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- Number: US 8,772,130 B2
- Document ID: US8772130B2
- Status: Granted
- Kind: B2
- Application number: 13/589,704
- Filed: 2012-08-20
- Published: 2013-02-28
- Granted: 2014-07-08
- Earliest claimed: 2011-08-23
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Hiroshi Ohki
- Inventors: Hiroshi Ohki
- Web page: https://patentgrep.com/patent/US8772130B2

## CPC

- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In order to keep the crystallinity of the semiconductor thin film layer high, a temperature of a semiconductor substrate during hydrogen ion addition treatment is suppressed to lower than or equal to 200° C. In addition, the semiconductor substrate is subjected to plasma treatment while the semiconductor substrate is kept at a temperature of higher than or equal to 100° C. and lower than or equal to 400° C. after the hydrogen ion addition treatment, whereby Si—H bonds which have low contribution to separation of the semiconductor thin film layer can be reduced while Si—H bonds which have high contribution to separation of the semiconductor thin film layer, which are generated by the hydrogen ion addition treatment, are kept.

## Claims

### Claim 1

A method for manufacturing an SOI substrate, comprising the steps of:
forming an insulating layer on a surface of a semiconductor substrate;
forming an embrittlement region in the semiconductor substrate by adding accelerated ions to the semiconductor substrate;
performing plasma treatment on the semiconductor substrate, whereby Si—H bonds are reduced;
bonding a base substrate to the semiconductor substrate with the insulating layer interposed therebetween;
performing heat treatment on the semiconductor substrate; and
forming a semiconductor layer over the base substrate with the insulating layer interposed therebetween by separating the base substrate from the semiconductor substrate at the embrittlement region,
wherein the semiconductor substrate is kept at a temperature of lower than or equal to 200° C. during the addition of the ions, and
wherein the semiconductor substrate is kept at a temperature of higher than or equal to 100° C. during the plasma treatment.

### Claim 2 (depends on 1)

The method for manufacturing an SOI substrate according to claim 1, wherein the ions are added to the semiconductor substrate plural times.

### Claim 3 (depends on 1)

The method for manufacturing an SOI substrate according to claim 1, wherein the plasma treatment is performed for longer than or equal to 10 minutes.

### Claim 4 (depends on 1)

The method for manufacturing an SOI substrate according to claim 1, wherein aluminosilicate glass, aluminoborosilicate glass, barium borosilicate glass, or quartz substrate is used for the base substrate.

### Claim 5 (depends on 1)

The method for manufacturing an SOI substrate according to claim 1, wherein the Si—H bonds have low contribution to the step of separating the base substrate from the semiconductor substrate.

### Claim 6

A method for manufacturing an SOI substrate, comprising the steps of:
forming an insulating layer on a surface of a semiconductor substrate;
forming an embrittlement region in the semiconductor substrate by adding accelerated ions to the semiconductor substrate;
performing plasma treatment on the semiconductor substrate, whereby Si—H bonds are reduced;
bonding a base substrate to the semiconductor substrate with the insulating layer interposed therebetween;
performing heat treatment on the semiconductor substrate; and
forming a semiconductor layer over the base substrate with the insulating layer interposed therebetween by separating the base substrate from the semiconductor substrate at the embrittlement region,
wherein the semiconductor substrate is kept at a temperature of lower than or equal to 200° C. during the addition of the ions, and
wherein the semiconductor substrate is kept at a temperature of higher than or equal to 100° C. and lower than or equal to 400° C. during the plasma treatment.

### Claim 7 (depends on 6)

The method for manufacturing an SOI substrate according to claim 6, wherein the ions are added to the semiconductor substrate plural times.

### Claim 8 (depends on 6)

The method for manufacturing an SOI substrate according to claim 6, wherein the plasma treatment is performed for longer than or equal to 10 minutes.

### Claim 9 (depends on 6)

The method for manufacturing an SOI substrate according to claim 6, wherein aluminosilicate glass, aluminoborosilicate glass, barium borosilicate glass, or quartz substrate is used for the base substrate.

### Claim 10 (depends on 6)

The method for manufacturing an SOI substrate according to claim 6, wherein the Si—H bonds have low contribution to the step of separating the base substrate from the semiconductor substrate.

### Claim 11

A method for manufacturing an SOI substrate, comprising the steps of:
forming an insulating layer on a surface of a semiconductor substrate;
forming an embrittlement region in the semiconductor substrate by adding accelerated ions to the semiconductor substrate;
performing plasma treatment on the semiconductor substrate, whereby Si—H bonds are reduced;
bonding a base substrate to the semiconductor substrate with the insulating layer interposed therebetween;
performing heat treatment on the semiconductor substrate; and
forming a semiconductor layer over the base substrate with the insulating layer interposed therebetween by separating the base substrate from the semiconductor substrate at the embrittlement region,
wherein the semiconductor substrate is kept at a temperature of lower than or equal to 200° C. during the addition of the ions,
wherein the semiconductor substrate is kept at a temperature of higher than or equal to 100° C. and lower than or equal to 400° C. during the plasma treatment, and
wherein the plasma treatment is performed so that when distribution of the Si—H bonds in the semiconductor substrate is measured by Fourier transform infrared spectroscopy, peaks of absorbance in a range greater than or equal to 1930 cm−1 and less than or equal to 2065 cm−1 in the semiconductor substrate after the plasma treatment are reduced from peaks of absorbance in the range in the semiconductor substrate before the plasma treatment.

### Claim 12 (depends on 11)

The method for manufacturing an SOI substrate according to claim 11, wherein the ions are added to the semiconductor substrate plural times.

### Claim 13 (depends on 11)

The method for manufacturing an SOI substrate according to claim 11, wherein the plasma treatment is performed for longer than or equal to 10 minutes.

### Claim 14 (depends on 11)

The method for manufacturing an SOI substrate according to claim 11, wherein aluminosilicate glass, aluminoborosilicate glass, barium borosilicate glass, or quartz substrate is used for the base substrate.

### Claim 15 (depends on 11)

The method for manufacturing an SOI substrate according to claim 11, wherein the Si—H bonds have low contribution to the step of separating the base substrate from the semiconductor substrate.