# US 8,772,128 B2 · Method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,128 B2 - Document ID: US8772128B2 - Status: Granted - Kind: B2 - Application number: 12/246,577 - Filed: 2008-10-07 - Published: 2009-04-30 - Granted: 2014-07-08 - Earliest claimed: 2007-10-10 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Shunpei Yamazaki; Junpei Momo; Fumito Isaka; Eiji Higa; Masaki Koyama; Akihisa Shimomura - Inventors: Shunpei Yamazaki; Junpei Momo; Fumito Isaka; Eiji Higa; Masaki Koyama; Akihisa Shimomura - Web page: https://patentgrep.com/patent/US8772128B2 ## CPC - H10D 86/0214: {using temporary substrates} - B23K 26/03: Observing, e.g. monitoring, the workpiece - B23K 26/083: {Devices involving movement of the workpiece in at least one axial direction} - B23K 26/12: in a special environment or atmosphere, e.g. in an enclosure - B23K 26/127: {in an enclosure} - B23K 26/14: using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor (B23K26/12 takes precedence) - H10D 86/40: characterised by multiple TFTs - H10D 86/411: {characterised by materials, geometry or structure of the substrates} - H10D 86/60: wherein the TFTs are in active matrices - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut} - H10P 95/906: {for altering the shape of semiconductors, e.g. smoothing the surface} - H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers} - H10D 30/0323: {comprising monocrystalline silicon} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising the steps of: irradiating a single crystal semiconductor substrate with ions that are accelerated with an ion doping apparatus to form a damaged region in a region at a predetermined depth from a surface of the single crystal semiconductor substrate; forming a buffer layer over at least one of a supporting substrate and the single crystal semiconductor substrate; disposing the supporting substrate and the single crystal semiconductor substrate in contact with each other with the buffer layer interposed between the supporting substrate and the single crystal semiconductor substrate to bond the supporting substrate and the single crystal semiconductor substrate to each other; causing a crack in the damaged region by heating the single crystal semiconductor substrate to separate the single crystal semiconductor substrate from the supporting substrate, thereby forming a supporting substrate to which a single crystal semiconductor layer that is separated from the single crystal semiconductor substrate is fixed; and irradiating the single crystal semiconductor layer fixed to the supporting substrate with a laser beam while heating the single crystal semiconductor layer by a heated gas, to melt the single crystal semiconductor layer, thereby performing re-single-crystallization of the single crystal semiconductor layer. ### Claim 2 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein a surface and a vicinity of the surface of a region irradiated with the laser beam in the single crystal semiconductor layer are melted by irradiating the single crystal semiconductor layer with the laser beam while heating the single crystal semiconductor layer. ### Claim 3 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein a part of the single crystal semiconductor layer in a depth direction of a region irradiated with the laser beam is melted by irradiating the single crystal semiconductor layer with the laser beam while heating the single crystal semiconductor layer. ### Claim 4 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein a region irradiated with the laser beam in the single crystal semiconductor layer is melted entirely in a depth direction by irradiating the single crystal semiconductor layer with the laser beam while heating the single crystal semiconductor layer. ### Claim 5 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the single crystal semiconductor layer is heated at a temperature equal to or higher than 400° C. and equal to or lower than a strain point of the supporting substrate when the single crystal semiconductor layer is irradiated with the laser beam. ### Claim 6 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the single crystal semiconductor layer is heated at a temperature equal to or higher than 400° C. and equal to or lower than 650° C. when the single crystal semiconductor layer is irradiated with the laser beam. ### Claim 7 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the single crystal semiconductor layer fixed to the supporting substrate is irradiated with the laser beam while the supporting substrate to which the single crystal semiconductor layer is fixed is heated at a temperature equal to or higher than 400° C. and equal to or lower than a strain point of the supporting substrate. ### Claim 8 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the single crystal semiconductor layer fixed to the supporting substrate is irradiated with the laser beam while the supporting substrate to which the single crystal semiconductor layer is fixed is heated at a temperature equal to or higher than 450° C. and equal to or lower than 650° C. ### Claim 9 (depends on 1) The method for manufacturing a semiconductor device according to claim 1 wherein the single crystal semiconductor layer is irradiated with the laser beam in an inert gas atmosphere. ### Claim 10 (depends on 9) The method for manufacturing a semiconductor device according to claim 9, wherein the inert gas is a nitrogen gas or a noble gas. ### Claim 11 (depends on 9) The method for manufacturing a semiconductor device according to claim 9, wherein the inert gas has a concentration of an oxygen gas of 30 ppm or less. ### Claim 12 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the damaged region is formed by exciting a hydrogen gas to generate a plasma including H3+ and by irradiating the single crystal semiconductor substrate with ions that are included in the plasma and accelerated. ### Claim 13 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the supporting substrate has a strain point of 650° C. to 690° C. ### Claim 14 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the supporting substrate is a glass substrate. ### Claim 15 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the supporting substrate is one of a non-alkali glass substrate (product name: AN100), a non-alkali glass substrate (product name: EAGLE2000 (registered trademark)), and a non-alkali glass substrate (product name: EAGLE XG (registered trademark)). ### Claim 16 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the laser beam has a cross-sectional shape of one of a linear shape, a square shape, and a rectangular shape on an irradiation surface. ### Claim 17 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the buffer layer has a multilayer structure and comprises an insulating film in contact with the single crystal semiconductor layer, and the insulating film includes a halogen. ### Claim 18 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the single crystal semiconductor layer is melted for 200 nanoseconds to 1000 nanoseconds by being irradiated with the laser beam. ### Claim 19 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the supporting substrate is shrunk by the heating. ### Claim 20 (depends on 17) The method for manufacturing a semiconductor device according to claim 17, wherein the halogen is segregated at an interface between the single crystal semiconductor layer and the insulating film by irradiating the single crystal semiconductor layer fixed to the supporting substrate with the laser beam while heating. ### Claim 21 A method for manufacturing a semiconductor device, comprising the steps of: fixing a single crystal semiconductor layer to a glass substrate with a buffer layer interposed therebetween; and while heating the single crystal semiconductor layer fixed to the glass substrate at a temperature equal to or lower than a strain point of the glass substrate by a heated gas, irradiating a part of the single crystal semiconductor layer with a laser beam to melt an upper portion with leaving a single crystal region in a lower portion, thereby performing re-single-crystallization of the upper portion into a single crystal state having the same crystal orientation as the single crystal region of the lower portion. ### Claim 22 (depends on 21) The method for manufacturing a semiconductor device according to claim 21, wherein the laser beam has a cross-sectional shape of one of a square shape, a rectangular shape, and a linear shape on an irradiation surface, and wherein the part of the single crystal semiconductor layer is irradiated with the laser beam while the glass substrate to which the single crystal semiconductor layer is fixed is moved. ### Claim 23 (depends on 21) The method for manufacturing a semiconductor device according to claim 21, wherein re-single-crystallization of the melted portion is performed and a defect in the melted portion is recovered by irradiating the single crystal semiconductor layer with the laser beam. ### Claim 24 (depends on 21) The method for manufacturing a semiconductor device according to claim 21, wherein the glass substrate is one of a non-alkali glass substrate (product name: AN100), a non-alkali glass substrate (product name: EAGLE2000 (registered trademark)), and a non-alkali glass substrate (product name: EAGLE XG (registered trademark)). ### Claim 25 (depends on 21) The method for manufacturing a semiconductor device according to claim 21, wherein the buffer layer has a multilayer structure and comprises a barrier layer capable of preventing sodium from entering the single crystal semiconductor layer. ### Claim 26 (depends on 21) The method for manufacturing a semiconductor device according to claim 21, wherein the buffer layer has a multilayer structure and comprises a silicon nitride film or a silicon nitride oxide film. ### Claim 27 (depends on 21) The method for manufacturing a semiconductor device according to claim 21, wherein the buffer layer has a multilayer structure and comprises a bonding layer that is bonded to the glass substrate or the single crystal semiconductor layer. ### Claim 28 (depends on 21) The method for manufacturing a semiconductor device according to claim 21, wherein the buffer layer has a multilayer structure and comprises an oxide film obtained by oxidizing the single crystal semiconductor layer. ### Claim 29 (depends on 21) The method for manufacturing a semiconductor device according to claim 21, wherein the buffer layer has a multilayer structure and comprises a bonding layer that is bonded to the glass substrate or the single crystal semiconductor layer and a barrier layer capable of preventing sodium from entering the single crystal semiconductor layer. ### Claim 30 (depends on 21) The method for manufacturing a semiconductor device according to claim 21, wherein the buffer layer has a multilayer structure and comprises a bonding layer that is bonded to the glass substrate, an insulating film in contact with the single crystal semiconductor layer, and a barrier layer capable of preventing sodium from entering the single crystal semiconductor layer, the barrier layer being formed between the bonding layer and the insulating film. ### Claim 31 (depends on 30) The method for manufacturing a semiconductor device according to claim 30, wherein the insulating film in contact with the single crystal semiconductor layer is a silicon oxide film or a silicon oxynitride film. ### Claim 32 (depends on 30) The method for manufacturing a semiconductor device according to claim 30, wherein the insulating film in contact with the single crystal semiconductor layer is an oxide film obtained by oxidizing the single crystal semiconductor layer. ### Claim 33 (depends on 30) The method for manufacturing a semiconductor device according to claim 30, wherein the barrier layer is a silicon nitride film or a silicon nitride oxide film. ### Claim 34 (depends on 21) The method for manufacturing a semiconductor device according to claim 21, wherein the buffer layer has a multilayer structure and comprises an insulating film in contact with the single crystal semiconductor layer, the insulating film including a halogen. ### Claim 35 (depends on 21) The method for manufacturing a semiconductor device according to claim 21, wherein the single crystal semiconductor layer is melted for 200 nanoseconds to 1000 nanoseconds by being irradiated with the laser beam. ### Claim 36 (depends on 21) The method for manufacturing a semiconductor device according to claim 21, wherein the glass substrate is shrunk by the heating. ### Claim 37 (depends on 34) The method for manufacturing a semiconductor device according to claim 34, wherein the halogen is segregated at an interface between the single crystal semiconductor layer and the insulating film by irradiating the part of the single crystal semiconductor layer fixed to the glass substrate with the laser beam while heating. ### Claim 38 A method for manufacturing a semiconductor device, comprising the steps of: fixing a single crystal semiconductor layer to a glass substrate with a buffer layer interposed therebetween; and while heating the single crystal semiconductor layer fixed to the glass substrate at a temperature equal to or lower than a strain point of the glass substrate by a heated gas, irradiating a part of the single crystal semiconductor layer with a laser beam to melt a region irradiated with the laser beam in the single crystal semiconductor layer, thereby performing re-single-crystallization into a single crystal state having the same crystal orientation as a single crystal state in a region adjacent to the region irradiated with the laser beam. ### Claim 39 (depends on 38) The method for manufacturing a semiconductor device according to claim 38, wherein the laser beam has a cross-sectional shape of one of a square shape, a rectangular shape, and a linear shape on an irradiation surface, and wherein the part of the single crystal semiconductor layer is irradiated with the laser beam while the glass substrate to which the single crystal semiconductor layer is fixed is moved. ### Claim 40 (depends on 38) The method for manufacturing a semiconductor device according to claim 38, wherein re-single-crystallization of the melted portion is performed and a defect in the melted portion is recovered by irradiating the single crystal semiconductor layer with the laser beam. ### Claim 41 (depends on 38) The method for manufacturing a semiconductor device according to claim 38, wherein the glass substrate is one of a non-alkali glass substrate (product name: AN100), a non-alkali glass substrate (product name: EAGLE2000 (registered trademark)), and a non-alkali glass substrate (product name: EAGLE XG (registered trademark)). ### Claim 42 (depends on 38) The method for manufacturing a semiconductor device according to claim 38, wherein the buffer layer has a multilayer structure and comprises a barrier layer capable of preventing sodium from entering the single crystal semiconductor layer. ### Claim 43 (depends on 38) The method for manufacturing a semiconductor device according to claim 38, wherein the buffer layer has a multilayer structure and comprises a silicon nitride film or a silicon nitride oxide film. ### Claim 44 (depends on 38) The method for manufacturing a semiconductor device according to claim 38, wherein the buffer layer has a multilayer structure and comprises a bonding layer that is bonded to the glass substrate or the single crystal semiconductor layer. ### Claim 45 (depends on 38) The method for manufacturing a semiconductor device according to claim 38, wherein the buffer layer has a multilayer structure and comprises an oxide film obtained by oxidizing the single crystal semiconductor layer. ### Claim 46 (depends on 38) The method for manufacturing a semiconductor device according to claim 38, wherein the buffer layer has a multilayer structure and comprises a bonding layer that is bonded to the glass substrate or the single crystal semiconductor layer and a barrier layer capable of preventing sodium from entering the single crystal semiconductor layer. ### Claim 47 (depends on 38) The method for manufacturing a semiconductor device according to claim 38, wherein the buffer layer has a multilayer structure and comprises a bonding layer that is bonded to the glass substrate, an insulating film in contact with the single crystal semiconductor layer, and a barrier layer capable of preventing sodium from entering the single crystal semiconductor layer, the barrier layer being formed between the bonding layer and the insulating film. ### Claim 48 (depends on 47) The method for manufacturing a semiconductor device according to claim 47, wherein the insulating film in contact with the single crystal semiconductor layer is a silicon oxide film or a silicon oxynitride film. ### Claim 49 (depends on 47) The method for manufacturing a semiconductor device according to claim 47, wherein the insulating film in contact with the single crystal semiconductor layer is an oxide film obtained by oxidizing the single crystal semiconductor layer. ### Claim 50 (depends on 47) The method for manufacturing a semiconductor device according to claim 47, wherein the barrier layer is a silicon nitride film or a silicon nitride oxide film. ### Claim 51 (depends on 38) The method for manufacturing a semiconductor device according to claim 38, wherein the buffer layer has a multilayer structure and comprises an insulating film in contact with the single crystal semiconductor layer, the insulating film including a halogen. ### Claim 52 (depends on 38) The method for manufacturing a semiconductor device according to claim 38, wherein the single crystal semiconductor layer is melted for 200 nanoseconds to 1000 nanoseconds by being irradiated with the laser beam. ### Claim 53 (depends on 38) The method for manufacturing a semiconductor device according to claim 38, wherein the glass substrate is shrunk by the heating. ### Claim 54 (depends on 51) The method for manufacturing a semiconductor device according to claim 51, wherein the halogen is segregated at an interface between the single crystal semiconductor layer and the insulating film by irradiating the part of the single crystal semiconductor layer fixed to the glass substrate with the laser beam while heating.