# US 8,772,114 B2 · Metal gate semiconductor device and method of fabricating thereof

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- Number: US 8,772,114 B2
- Document ID: US8772114B2
- Status: Granted
- Kind: B2
- Application number: 13/434,969
- Filed: 2012-03-30
- Published: 2013-10-03
- Granted: 2014-07-08
- Earliest claimed: 2012-03-30
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Hak-Lay Chuang; Ming Zhu; Hui-Wen Lin; Bao-Ru Young
- Inventors: Hak-Lay Chuang; Ming Zhu; Hui-Wen Lin; Bao-Ru Young
- Web page: https://patentgrep.com/patent/US8772114B2

## CPC

- H10D 64/667: {the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671)}
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10D 64/669: {the conductor further comprising additional layers of alloy material, compound material or organic material, e.g. TaN/TiAlN}
- H10D 64/691: {comprising metallic compounds, e.g. metal oxides or metal silicates (insulators comprising nitrogen H10D64/693)}
- H10D 84/0177: {the gate conductors having different materials or different implants}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/83135: {the IGFETs characterised by having different gate conductor materials or different gate conductor implants}
- H10D 84/85: Complementary IGFETs, e.g. CMOS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method of semiconductor fabrication including forming a first work function metal layer on a first region of the substrate and forming a metal layer on the first work function metal layer and on a second region of the substrate. A dummy layer is formed on the metal layer. The layers are then patterned to form a first gate structure in the first region and a second gate structure in the second region of the substrate. The dummy layer is then removed to expose the metal layer, which is treated. The treatment may be an oxygen treatment that allows the metal layer to function as a second work function layer.

## Claims

### Claim 1

A method, comprising:
forming a first work function metal layer on a first region of the substrate, wherein the first region is defined to include devices of one of a p-type and an n-type;
forming a metal layer on the first work function metal layer in the first region and on a second region of the substrate, wherein the second region is defined to include devices of the other of a p-type and an n-type;
forming a dummy layer on the metal layer in the first region and the second region;
patterning the dummy layer, first work function metal layer, and the metal layer to form a first gate structure in the first region and a second gate structure in the second region of the substrate, wherein the first gate structure includes the dummy layer, the first work function metal layer and the metal layer and the second gate structure includes the dummy layer and the metal layer;
after forming the first gate structure and the second gate structure, removing the dummy layer to expose the metal layer; and
treating the metal layer in the first region and the second region.

### Claim 2 (depends on 1)

The method of claim 1, wherein the treating includes an oxygen treatment.

### Claim 3 (depends on 1)

The method of claim 1, wherein the treating includes transforming a composition of the metal layer.

### Claim 4 (depends on 3)

The method of claim 3, wherein the transformed composition provides a work function for a p-type device.

### Claim 5 (depends on 3)

The method of claim 3, wherein the transforming the composition includes transforming from a TiN composition to a TiON composition.

### Claim 6 (depends on 1)

The method of claim 1, wherein the first gate structure is associated with an nFET device, and the second gate structure is associated with a pFET device.

### Claim 7 (depends on 1)

The method of claim 1, wherein the first work function metal layer includes a capping layer and another metal layer.

### Claim 8 (depends on 7)

The method of claim 7, further comprising:
forming fill layer including a blocking layer and a filler metal layer on the treated metal layer.

### Claim 9

A method, comprising:
forming a portion of a first gate structure associated with a NMOS transistor, wherein the portion of the first gate structure includes a gate dielectric, a capping layer, a first metal layer on the capping layer, and a second metal layer overlying the first metal layer, wherein the first metal layer is an n-type metal;
forming a portion of a second gate structure associated with a PMOS transistor, wherein the portion of the second gate structure includes the gate dielectric and the second metal layer formed on the gate dielectric, and wherein the second gate structure does not include the first metal layer;
forming a dummy layer on the portion of the first gate structure and on the portion of the second gate structure overlying the second metal layer;
removing the dummy layer simultaneously in both the first gate structure and the second gate structure to form trenches; and
filling the trenches with a fill metal.

### Claim 10 (depends on 9)

The method of claim 9, further comprising:
treating the second metal layer after removing the dummy layer and before filling the trenches.

### Claim 11 (depends on 10)

The method of claim 10, wherein the treating introduces oxygen to the second metal layer.

### Claim 12 (depends on 9)

The method of claim 9, wherein the forming the portion of the second gate structure includes forming the second metal layer directly on the gate dielectric.

### Claim 13 (depends on 9)

The method of claim 9, wherein the forming the portion of the first gate structure includes:
forming the gate dielectric layer on a substrate in a first and second region of the substrate;
forming a capping layer and the first metal layer on the substrate and patterning the capping layer and the first metal layer to be disposed only on the first region of the substrate;
forming the second metal layer on the substrate on the first and second regions of the substrate; and
patterning the gate dielectric layer, the capping layer, the first metal layer, and the second metal layer to form the portion of the first gate structure in the first region of the substrate.

### Claim 14 (depends on 9)

The method of claim 9, wherein the dummy layer is polysilicon.

### Claim 15

A method, comprising:
forming a portion of a first gate structure associated with a first type of transistor, wherein the portion of the first gate structure includes a capping layer, a first metal layer having a first type of work function on the capping layer, and a second metal layer overlying the first metal layer;
forming a portion of a second gate structure associated with a second type of transistor, wherein the portion of the second gate structure includes the gate dielectric and the second metal layer formed on the gate dielectric;
treating the second metal layer of the first gate structure and the second gate structure; and
forming a fill layer on the treated second metal layer of the first gate structure and the second gate structure.

### Claim 16 (depends on 15)

The method of claim 15, wherein the forming the portion of the second gate structure does not include forming the first metal layer in the second gate structure.

### Claim 17 (depends on 15)

The method of claim 15, further comprising:
forming a dummy layer on the portion of the first gate structure and on the portion of the second gate structure overlying the second metal layer prior to the treating of the second metal layer; and
removing the dummy layer simultaneously in both the first gate structure and the second gate structure to form trenches.

### Claim 18 (depends on 15)

The method of claim 15, wherein the treating the second metal layer includes an oxygen treatment.

### Claim 19 (depends on 15)

The method of claim 15, wherein the second metal layer is TiN prior to the treating, and wherein the treating forms a TiON composition for the second metal layer.

### Claim 20 (depends on 15)

The method of claim 15, wherein forming the portion of the first gate structure associated with the first type of transistor includes forming a n-type of transistor.