# US 8,772,112 B1 · Method for fabricating semiconductor device

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- Number: US 8,772,112 B1
- Document ID: US8772112B1
- Status: Granted
- Kind: B1
- Application number: 13/830,260
- Filed: 2013-03-14
- Published: 2014-07-03
- Granted: 2014-07-08
- Earliest claimed: 2012-12-31
- Assignees: Hyundai Motor Company
- Applicants: Hyundai Motor Company
- Inventors: Dae Hwan Chun; Jong Seok Lee; Kyoung-Kook Hong; Youngkyun Jung
- Web page: https://patentgrep.com/patent/US8772112B1

## CPC

- H10D 62/111: {Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures}
- H10D 12/031: {of IGBTs}
- H10D 30/0295: {using recessing of the source electrodes}
- H10D 30/0297: {using recessing of the gate electrodes, e.g. to form trench gate electrodes}
- H10D 30/66: Vertical DMOS [VDMOS] FETs
- H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors}
- H10D 62/8325: {Silicon carbide}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Disclosed is a method for fabricating a semiconductor device including: sequentially forming a first insulating film and a first barrier layer on a first surface of a substrate; etching the first barrier layer to form a first barrier layer pattern; etching the first insulating film to form a first insulating film pattern; removing the first barrier layer pattern and forming a first type epitaxial layer on an exposed first portion of the substrate; forming a second insulating film and a second barrier layer on the first type epitaxial layer and the first insulating film pattern; etching the second barrier layer to form a second barrier layer pattern; etching the second insulating film to form a second insulating film pattern, and etching the first insulating film pattern; and forming a second type epitaxial layer on an exposed second portion of the first surface of the n substrate.

## Claims

### Claim 1

A method for fabricating a semiconductor device, the method comprising:
sequentially forming a first insulating film and a first barrier layer on a first surface of an n+ type substrate;
etching the first barrier layer to form a first barrier layer pattern;
etching the first insulating film by using the first barrier layer pattern as a mask to form a first insulating film pattern to thereby expose a first portion of a first surface of the n+ type silicon carbide substrate;
removing the first barrier layer pattern and then forming a first type of epitaxial layer by a first epitaxial growth on the exposed first portion of the first surface of the n+ type silicon carbide substrate;
sequentially forming a second insulating film and a second barrier layer on the first type of epitaxial layer and the first insulating film pattern;
etching the second barrier layer to form a second barrier layer pattern;
etching the second insulating film by using the second barrier layer pattern as a mask to form a second insulating film pattern, and etching the first insulating film pattern by using the second barrier layer pattern as a mask to expose a second portion of the first surface of the n+ type silicon carbide substrate; and
forming a second type of epitaxial layer by a second epitaxial growth on the exposed second portion of the first surface of the n+ type silicon carbide substrate,
wherein the first portion of the first surface of the n+ type silicon carbide substrate and the second portion of the first surface of the n+ type silicon carbide substrate are adjacent to each other.

### Claim 2 (depends on 1)

The method of claim 1 wherein the an n+ type substrate is an n+ type silicon carbide substrate.

### Claim 3 (depends on 1)

The method of claim 1, wherein the first insulating film pattern, the first type epitaxial layer, and the second type epitaxial layer have the same thickness.

### Claim 4 (depends on 1)

The method of claim 1, wherein the second insulating film pattern is positioned on the first type of epitaxial layer.

### Claim 5 (depends on 4)

The method of claim 4, wherein the first insulating film and the second insulating film are formed of silicon dioxide, silicon oxynitride, silicon nitride, amorphous carbon, or combinations thereof.

### Claim 6 (depends on 5)

The method of claim 5, wherein the first barrier layer and the second barrier layer are formed of amorphous carbon, silicon dioxide, silicon nitride, nitride, metal, or combinations thereof.

### Claim 7 (depends on 1)

The method of claim 1, further comprising:
after the forming of a second type of epitaxial layer,
removing the second insulating film pattern and then sequentially forming a p+ region and an n+ region on the first type of epitaxial layer and the second-type of epitaxial layer;
forming a trench by penetrating the p+ region and the n+ region and etching part of the first type epitaxial layer;
forming a gate insulating film within the trench;
forming a gate electrode on the gate insulating film;
forming an oxide film on the gate insulating film and the gate electrode; and
forming a source electrode on the n+ region and the oxide film and forming a drain electrode on a second surface of the n+ type silicon carbide substrate.

### Claim 8 (depends on 6)

The method of claim 6, wherein the first type of epitaxial layer is positioned under the gate electrode.

### Claim 9 (depends on 7)

The method of claim 7, wherein the first type of epitaxial layer is an n type epitaxial layer, and the second type of epitaxial layer is a p type epitaxial layer.

### Claim 10 (depends on 7)

The method of claim 7, wherein the first type of epitaxial layer is a p type epitaxial layer, and the second type of epitaxial layer is an n type epitaxial layer.