# US 8,772,110 B2 · Semiconductor device having fin structure and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,110 B2 - Document ID: US8772110B2 - Status: Granted - Kind: B2 - Application number: 13/722,890 - Filed: 2012-12-20 - Published: 2013-12-05 - Granted: 2014-07-08 - Earliest claimed: 2012-05-30 - Assignees: SK hynix Inc. - Applicants: SK Hynix Inc. - Inventors: Seung Joo Baek - Web page: https://patentgrep.com/patent/US8772110B2 ## CPC - H10D 30/6212: {having fin-shaped semiconductor bodies having non-rectangular cross-sections} - H10D 30/024: {of fin field-effect transistors [FinFET]} - H10D 30/62: Fin field-effect transistors [FinFET] - H10D 30/6211: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates} - H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions} - H10W 10/0143: {comprising concurrently refilling multiple trenches having different shapes or dimensions} - H10W 10/0148: {comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers} - H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations - H10D 30/6213: {having rounded corners} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract In a semiconductor device, a thin wall oxide film formed over sidewalls of an active region is formed, and a portion of the wall oxide film adjacent to a gate region is removed. A gate insulating film is formed where the portion of wall oxide film was removed to prevent a parasitic transistor from being generated by the wall oxide film. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, the method comprising: etching a semiconductor substrate to form a device isolation trench that defines an active region; forming a wall oxide film having a first thickness over inner surfaces of the device isolation trench; forming a device isolation film in the device isolation trench; etching the active region and the device isolation film to form a recess with a first depth over the active region and a second depth greater than the first depth over the device isolation film; forming a moat by removing portions of the wall oxide film adjacent to a portion of the active region exposed by the recess; forming a gate insulating film extending into the moat; and forming a gate in the recess. ### Claim 2 A method of manufacturing a semiconductor device, the method comprising: etching a semiconductor substrate to form a device isolation trench that defines an active region; forming a wall oxide film having a first thickness over inner surfaces of the device isolation trench; implanting an inert gas into the wall oxide film; forming a device isolation film in the device isolation trench; etching the active region and the device isolation film to form a recess with a first depth over the active region and a second depth greater than the first depth over the device isolation film; forming a moat by removing portions of the wall oxide film adjacent to a portion of the active region exposed by the recess; forming a gate insulating film having a second thickness over portions of the active region exposed by the recess and the moat; and forming a gate in the recess. ### Claim 3 (depends on 2) The method according to claim 2, wherein the inert gas includes at least one selected from a group consisting of argon and fluorine. ### Claim 4 (depends on 2) The method according to claim 2, wherein implanting the inert gas comprises performing a tilt implanting process to implant the inert gas into portions of the wall oxide film formed over sidewalls of the device isolation trench. ### Claim 5 (depends on 2) The method according to claim 2, wherein forming the moat further comprises performing a cleaning process after forming the recess to remove a first portion of the wall oxide film disposed over the portion of the active region exposed by the recess, and a second portion of the wall oxide film disposed below an upper surface of the device isolation film. ### Claim 6 (depends on 5) The method according to claim 5, wherein forming the gate insulating film comprises forming an insulating film in the moat. ### Claim 7 A method of manufacturing a semiconductor device, the method comprising: etching a semiconductor substrate to form a device isolation trench that defines an active region; forming a wall oxide film having a first thickness over inner surfaces of the device isolation trench; forming a device isolation film in the device isolation trench; etching the active region and the device isolation film to form a recess with a first depth over the active region and a second depth greater than the first depth over the device isolation film; forming a moat by removing portions of the wall oxide film adjacent to a portion of the active region exposed by the recess; forming a gate insulating film having a second thickness over portions of the active region exposed by the recess and the moat; and forming a gate in the recess, wherein forming the moat further comprises removing a portion of the device isolation film while removing the portions of the wall oxide film to extend a width of the recess. ### Claim 8 (depends on 7) The method according to claim 7, wherein the removed portion of the device isolation film is adjacent to the portion of the active region exposed by the recess. ### Claim 9 (depends on 8) The method according to claim 8, wherein forming the moat further comprises: implanting an inert gas into the wall oxide film and the portion of the device isolation film, wherein the portion of the device isolation film is adjacent to the portion of the active region exposed by the recess; and performing a cleaning process on the recess. ### Claim 10 (depends on 9) The method according to claim 9, wherein a width of the moat is larger than the second thickness. ### Claim 11 (depends on 10) The method according to claim 10, wherein forming the gate comprises forming a gate material within the recess and the moat. ### Claim 12 (depends on 9) The method according to claim 9, wherein implanting the inert gas comprises implanting the inert gas into side surfaces and a bottom surface of the recess. ### Claim 13 (depends on 9) The method according to claim 9, wherein the inert gas includes at least one selected from the group consisting of argon and fluorine.