# US 8,772,099 B2 · Method of use of a field-effect transistor, single-electron transistor and sensor

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- Number: US 8,772,099 B2
- Document ID: US8772099B2
- Status: Granted
- Kind: B2
- Application number: 13/556,314
- Filed: 2012-07-24
- Published: 2012-11-15
- Granted: 2014-07-08
- Earliest claimed: 2003-08-29
- Assignees: Japan Science and Technology Agency
- Applicants: Kazuhiko Matsumoto; Atsuhiko Kojima; Satoru Nagao; Masanori Katou; Yutaka Yamada; Kazuhiro Nagaike; Yasuo Ifuku; Hiroshi Mitani
- Inventors: Kazuhiko Matsumoto; Atsuhiko Kojima; Satoru Nagao; Masanori Katou; Yutaka Yamada; Kazuhiro Nagaike; Yasuo Ifuku; Hiroshi Mitani
- Web page: https://patentgrep.com/patent/US8772099B2

## CPC

- G01N 27/4145: {specially adapted for biomolecules, e.g. gate electrode with immobilised receptors}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- G01N 27/4146: {involving nanosized elements, e.g. nanotubes, nanowires}
- H10D 30/402: {Single electron transistors; Coulomb blockade transistors}
- H10D 62/123: {comprising junctions}
- H10D 64/514: {characterised by the insulating layers}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method of detecting a detection target using a sensor requires a sensor having a transistor selected from the group of field-effect transistors or single electron transistors. The transistor includes a substrate, a source electrode disposed on the substrate and a drain electrode disposed on the substrate, and a channel forming a current path between the source electrode and the drawing electrode; an interaction-sensing gate comprising a specific substance; and a voltage gate. The method includes (a) providing the detection target on the interaction-sensing gate; (b) setting the gate voltage in the voltage gate at a predetermined level; (c) selectively interacting the specific substance with the detection target; (d) when the detection target interacts with the specific substance, changing a gate voltage in the voltage gate to adjust a characteristic of the transistor; and (e) measuring a change in the characteristic of the transistor to determine a presence of the detection target.

## Claims

### Claim 1

A method of detecting a detection target using a sensor,
the sensor comprising a transistor selected from the group of field-effect transistors or single electron transistors, the transistor comprising
a substrate having a first side and a second side, the second side being opposed to the first side, the substrate being formed of an insulating material,
a source electrode disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, and
a channel forming a current path between the source electrode and the drain electrode;
an interaction-sensing gate disposed on the second side of the entire substrate, the interaction-sensing gate immobilizing a specific substance that is capable of selectively interacting with the detection target, the interaction-sensing gate being formed of a conductor; and
a gate disposed on the side of the channel on the first side of the substrate;
the method comprising the steps of:
(a) providing the detection target on the interaction-sensing gate;
(b) setting a gate voltage in the gate in such a state that a transconductance of the transistor reaches a highest level;
(c) selectively interacting the specific substance with the detection target;
(d) when the detection target interacts with the specific substance, changing an electric potential of the interaction-sensing gate which leads to a change in a characteristic value of the transistor; and
(e) measuring the change in the characteristic value of the transistor to determine a presence of the detection target.

### Claim 2 (depends on 1)

The method of claim 1, wherein step (b) comprises setting the gate voltage such that the change of the characteristic value of the transistor is expected to reach the sufficient level on the detection of the detection target.

### Claim 3 (depends on 2)

The method of claim 2, wherein the sensor comprises the field-effect transistor, and the change in the characteristic value of the transistor is a current that flows between the source electrode and the drain electrode.

### Claim 4 (depends on 2)

The method of claim 2, wherein the change in the characteristic value of the transistor is a side gate voltage.