# US 8,772,082 B2 · Light-emitting element and light-emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,082 B2 - Document ID: US8772082B2 - Status: Granted - Kind: B2 - Application number: 13/912,430 - Filed: 2013-06-07 - Published: 2013-10-17 - Granted: 2014-07-08 - Earliest claimed: 2008-11-17 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Hideko Inoue; Nobuharu Ohsawa; Satoshi Seo - Web page: https://patentgrep.com/patent/US8772082B2 ## CPC - C09K 11/06: containing organic luminescent materials - H05B 33/14: characterised by the chemical or physical composition or the arrangement of the electroluminescent material {, or by the simultaneous addition of the electroluminescent material in or onto the light source} - H10K 50/125: specially adapted for multicolour light emission, e.g. for emitting white light - H10K 85/342: {comprising iridium} - H10K 85/361: {Polynuclear complexes, i.e. complexes comprising two or more metal centers} - C09K 2211/1007: Non-condensed systems - C09K 2211/1044: containing two nitrogen atoms as heteroatoms - C09K 2211/185: of the platinum group, i.e. Os, Ir, Pt, Ru, Rh or Pd - H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass - H10K 71/164: {using vacuum deposition} - H10K 71/70: Testing, e.g. accelerated lifetime tests - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE - H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract To provide a light-emitting element, a light-emitting device, and an electronic device each formed using the organometallic complex represented by General Formula (G1) as a guest material and a low molecule compound as a host material. ## Claims ### Claim 1 A method for manufacturing a light-emitting device, comprising the steps of: forming a light-emitting layer comprising a host material and a guest material over a first electrode; and forming a second electrode over the light-emitting layer, wherein the light-emitting layer is formed by a dry process, wherein the guest material is an organometallic complex represented by General Formula (G1), wherein each of R1 to R15 represents hydrogen or an alkyl group having 1 to 4 carbon atoms, wherein one of R21 and R22 represents an alkyl group having 2 to 10 carbon atoms and the other of R21 and R22 represents an alkyl group having 1 to 10 carbon atoms, wherein M is a central metal and represents an element belonging to Group 9 or Group 10, and wherein n is 1 or 2. ### Claim 2 (depends on 1) The method for manufacturing a light-emitting device, according to claim 1, wherein the dry process is an evaporation method. ### Claim 3 (depends on 1) The method for manufacturing a light-emitting device, according to claim 1, wherein the host material has a molecular weight greater than or equal to 100 and less than or equal to 2000. ### Claim 4 (depends on 1) The method for manufacturing a light-emitting device, according to claim 1, further comprising the steps of: forming a hole-injecting layer between the first electrode and the light-emitting layer; forming a hole-transporting layer between the hole-injecting layer and the light-emitting layer; forming an electron-transporting layer between the light-emitting layer and the second electrode, and forming an electron-injecting layer between the electron-transporting layer and the second electrode. ### Claim 5 (depends on 1) The method for manufacturing a light-emitting device, according to claim 1, wherein the each of R1 to R15 represents hydrogen. ### Claim 6 (depends on 1) The method for manufacturing a light-emitting device, according to claim 1, wherein the central metal is iridium. ### Claim 7 A method for manufacturing a light-emitting device, comprising the steps of: forming a first light-emitting layer over a first electrode; forming a second light-emitting layer comprising a host material and a guest material over the first light-emitting layer; and forming a second electrode over the second light-emitting layer, wherein the second light-emitting layer is formed by a dry process, wherein the guest material is an organometallic complex represented by General Formula (G1), wherein each of R1 to R15 represents hydrogen or an alkyl group having 1 to 4 carbon atoms, wherein one of R21 and R22 represents an alkyl group having 2 to 10 carbon atoms and the other of R21 and R22 represents an alkyl group having 1 to 10 carbon atoms, wherein M is a central metal and represents an element belonging to Group 9 or Group 10, and wherein n is 1 or 2. ### Claim 8 (depends on 7) The method for manufacturing a light-emitting device, according to claim 7, wherein the dry process is an evaporation method. ### Claim 9 (depends on 7) The method for manufacturing a light-emitting device, according to claim 7, wherein the host material has a molecular weight greater than or equal to 100 and less than or equal to 2000. ### Claim 10 (depends on 7) The method for manufacturing a light-emitting device, according to claim 7, further comprising the steps of: forming a hole-injecting layer between the first electrode and the first light-emitting layer; forming a hole-transporting layer between the hole-injecting layer and the first light-emitting layer; forming an electron-transporting layer between the second light-emitting layer and the second electrode, and forming an electron-injecting layer between the electron-transporting layer and the second electrode. ### Claim 11 (depends on 7) The method for manufacturing a light-emitting device, according to claim 7, wherein the each of R1 to R15 represents hydrogen. ### Claim 12 (depends on 7) The method for manufacturing a light-emitting device, according to claim 7, wherein the central metal is iridium. ### Claim 13 A method for manufacturing a light-emitting device, comprising the steps of: forming a first light-emitting layer over a first electrode; forming a charge-generating layer over the first light-emitting layer; forming a second light-emitting layer comprising a host material and a guest material over the charge-generating layer; and forming a second electrode over the second light-emitting layer, wherein the second light-emitting layer is formed by a dry process, wherein the guest material is an organometallic complex represented by General Formula (G1), wherein each of R1 to R15 represents hydrogen or an alkyl group having 1 to 4 carbon atoms, wherein one of R21 and R22 represents an alkyl group having 2 to 10 carbon atoms and the other of R21 and R22 represents an alkyl group having 1 to 10 carbon atoms, wherein M is a central metal and represents an element belonging to Group 9 or Group 10, and wherein n is 1 or 2. ### Claim 14 (depends on 13) The method for manufacturing a light-emitting device, according to claim 13, wherein the dry process is an evaporation method. ### Claim 15 (depends on 13) The method for manufacturing a light-emitting device, according to claim 13, wherein the host material has a molecular weight greater than or equal to 100 and less than or equal to 2000. ### Claim 16 (depends on 13) The method for manufacturing a light-emitting device, according to claim 13, further comprising the steps of: forming a hole-injecting layer between the first electrode and the first light-emitting layer; forming a hole-transporting layer between the hole-injecting layer and the first light-emitting layer; forming an electron-transporting layer between the second light-emitting layer and the second electrode, and forming an electron-injecting layer between the electron-transporting layer and the second electrode. ### Claim 17 (depends on 13) The method for manufacturing a light-emitting device, according to claim 13, wherein the each of R1 to R15 represents hydrogen. ### Claim 18 (depends on 13) The method for manufacturing a light-emitting device, according to claim 13, wherein the central metal is iridium.