# US 8,772,081 B2 · Memory device with a double helix biopolymer layer and fabricating method thereof

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,772,081 B2
- Document ID: US8772081B2
- Status: Granted
- Kind: B2
- Application number: 13/596,573
- Filed: 2012-08-28
- Published: 2013-12-05
- Granted: 2014-07-08
- Earliest claimed: 2012-05-30
- Assignees: National Tsing Hua University
- Applicants: Yu-Chueh Hung; Wei-Ting Hsu; Ting-Yu Lin; Ljiljana Fruk
- Inventors: Yu-Chueh Hung; Wei-Ting Hsu; Ting-Yu Lin; Ljiljana Fruk
- Web page: https://patentgrep.com/patent/US8772081B2

## CPC

- H10K 85/761: {Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- G11C 13/0019: {comprising bio-molecules}
- H10K 10/50: Bistable switching devices
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

The present invention relates to a write-once and read-many-times memory device and the fabricating method thereof. The structure of the memory device comprises: a substrate, a first electrode, a double helix biopolymer layer and a second electrode, and a plurality of metal nanoparticles are distributed in the double helix biopolymer layer. The first electrode is disposed on the substrate, the double helix biopolymer layer is disposed on the first electrode and the substrate, and the second electrode is disposed on the double helix biopolymer layer. When illuminating, the memory device will produce a low-conductivity state and high-conductivity state for writing data. Later, when a voltage is applied to the first electrode and the second electrode, the data will be read.

## Claims

### Claim 1

A fabricating method of a memory device with a double helix biopolymer layer, the steps of the fabricating method comprising:
providing a substrate;
forming a first electrode on said substrate;
forming a double helix biopolymer layer on said first electrode and said substrate, wherein a plurality of metal nanoparticles are distributed in said double helix biopolymer layer; and
wherein a fabricating method of materials of said double helix biopolymer layer comprising steps of:
extracting a plurality of double helix biopolymers;
adding the extracting double helix biopolymers to a surfactant for fabricating a synthesized material; and
mixing and adding a metal salt into the synthesized material for fabricating a material of said double helix biopolymer layer;
forming a second electrode on said double helix biopolymer layer.

### Claim 2 (depends on 1)

The fabricating method according to the claim 1, wherein the metal salt is reduced to the metal nanoparticles distributed therein via a sensitizer.

### Claim 3 (depends on 1)

The fabricating method according to the claim 1, wherein the metal salt is silver trifluoroacetate.

### Claim 4 (depends on 1)

The fabricating method according to the claim 1, wherein said double helix biopolymer layer is formed on said substrate and said first electrode by a spin-coated process.

### Claim 5 (depends on 1)

The fabricating method according to the claim 1, wherein said second electrode is formed on said double helix biopolymer layer by thermal evaporation.

### Claim 6 (depends on 1)

The fabricating method according to the claim 1, further comprising step of: irradiating a UV light for writing data.

### Claim 7 (depends on 6)

The fabricating method according to the claim 6, wherein a wavelength of the UV light is 365 nm, and an intensity of the UV light is 3.5 mW/cm2.