# US 8,772,074 B2 · Organic light emitting display and manufacturing method of the same

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- Number: US 8,772,074 B2
- Document ID: US8772074B2
- Status: Granted
- Kind: B2
- Application number: 12/461,476
- Filed: 2009-08-12
- Published: 2010-02-18
- Granted: 2014-07-08
- Earliest claimed: 2008-08-13
- Assignees: LG Display Co., Ltd.
- Applicants: Jaehee Park; Heeseok Yang; Howon Choi
- Inventors: Jaehee Park; Heeseok Yang; Howon Choi
- Web page: https://patentgrep.com/patent/US8772074B2

## CPC

- H10K 50/171: {Electron injection layers}
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- H10K 59/1201: {Manufacture or treatment}
- H10K 59/8052: {Cathodes}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

Provided are an organic light emitting display device and a method for manufacturing the same. The organic light emitting display device comprises a transistor on a substrate, a cathode on the transistor and connected to a source or a drain of the transistor, a bank layer on the cathode and having an opening, a metal buffer layer on the cathode, an organic light emitting layer on the metal buffer layer, and an anode on the organic light emitting layer.

## Claims

### Claim 1

A method for manufacturing an organic light emitting display device, comprising:
forming a transistor on a substrate;
forming a first insulation layer on the transistor;
forming a metal shield layer on the first insulation layer, the metal shield layer directly on and physically contacting one of a source electrode and a drain electrode of the transistor;
forming a second insulation layer on the metal shield layer;
forming a cathode on the second insulation layer to be directly connected to the another one of the source electrode and the drain electrode of the transistor;
after forming the cathode, forming a bank layer having an opening on the cathode;
performing plasma pretreatment on the cathode to remove an oxide layer that is naturally formed on a surface of the cathode and to suppress an oxidation of the surface of the cathode;
forming a metal buffer layer directly on and physically contacting the cathode at the opening of the bank layer to prevent the oxidation of the cathode and to improve electron injection efficiency;
forming an organic light emitting layer directly on and contacting the metal buffer layer; and
forming an anode on the organic light emitting layer,
wherein a thickness of the metal buffer layer is approximately 1 Å to 50 Å,
wherein in said performing plasma pretreatment, one of nitrogen plasma and argon plasma is used,
wherein said performing plasma pretreatment and said forming the metal buffer are consecutively performed in an identical chamber.