# US 8,772,061 B2 · Process of making a solid state energy conversion device

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- Number: US 8,772,061 B2
- Document ID: US8772061B2
- Status: Granted
- Kind: B2
- Application number: 13/135,742
- Filed: 2011-07-14
- Published: 2011-11-10
- Granted: 2014-07-08
- Earliest claimed: 2006-09-12
- Assignees: University of Central Florida
- Applicants: Nathaniel R. Quick; Aravinda Kar
- Inventors: Nathaniel R. Quick; Aravinda Kar
- Web page: https://patentgrep.com/patent/US8772061B2

## CPC

- H10P 32/172: {being crystalline silicon carbide}
- H10F 10/16: Photovoltaic cells having only PN heterojunction potential barriers
- H10F 77/1227: {characterised by the dopants}
- H10H 20/8242: {characterised by the dopants}
- H10H 20/8252: {characterised by the dopants}
- Y02E 10/50: Photovoltaic [PV] energy
- Y02E 10/547: Monocrystalline silicon PV cells
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts.

## Claims

### Claim 1

The process of making a solid state energy conversion device for emitting green electromagnetic radiation upon excitation by electrical energy, comprising the steps of:
providing an n-type silicon carbide wide bandgap semiconductor material;
applying chromium dopant to a surface of the n-type silicon carbide wide bandgap semiconductor material;
directing a thermal energy beam onto the n-type silicon carbide wide bandgap semiconductor material in the presence of the chromium dopant atoms for converting a region within the n-type silicon carbide wide bandgap semiconductor material able to emit green electromagnetic radiation upon excitation by electrical energy; and
forming Ohmic conductors for exciting the region of the n-type silicon carbide wide bandgap semiconductor material with electrical energy.

### Claim 2

The process of making a solid state energy conversion device for emitting blue electromagnetic radiation upon excitation by electrical energy, comprising the steps of:
providing an n-type silicon carbide wide bandgap semiconductor material;
applying aluminum dopant to a surface of the n-type silicon carbide wide bandgap semiconductor material;
directing a thermal energy beam onto the n-type silicon carbide wide bandgap semiconductor material in the presence of the aluminum dopant atoms for converting a region within the n-type silicon carbide wide bandgap semiconductor material able to emit blue electromagnetic radiation upon excitation by electrical energy; and
forming Ohmic conductors for exciting the region of the n-type silicon carbide wide bandgap semiconductor material with electrical energy.

### Claim 3

The process of making a solid state energy conversion device for emitting blue-green electromagnetic radiation upon excitation by electrical energy, comprising the steps of:
providing a n-type silicon carbide wide bandgap semiconductor material;
applying boron dopant to a surface of the n-type silicon carbide wide bandgap semiconductor material;
directing a thermal energy beam onto the n-type silicon carbide wide bandgap semiconductor material in the presence of the boron dopant atoms for converting a region within the n-type silicon carbide wide bandgap semiconductor material able to emit blue-green electromagnetic radiation upon excitation by electrical energy; and
forming Ohmic conductors for exciting the region of the silicon carbide wide bandgap semiconductor material with electrical energy.

### Claim 4

The process of making a solid state energy conversion device for emitting red electromagnetic radiation upon excitation by electrical energy, comprising the steps of:
providing a n-type silicon carbide wide bandgap semiconductor material;
applying chromium dopant to a surface of the n-type silicon carbide wide bandgap semiconductor material;
directing a thermal energy beam onto the silicon carbide wide bandgap semiconductor material in the presence of the nitrogen dopant atoms for converting a region within the n-type silicon carbide wide bandgap semiconductor material able to emit red electromagnetic radiation upon excitation by electrical energy; and
forming Ohmic conductors for exciting the region of the silicon carbide wide bandgap semiconductor material with electrical energy.

### Claim 5

The process of making a solid state energy conversion device for emitting orange-red electromagnetic radiation upon excitation by electrical energy, comprising the steps of:
providing a p-type silicon carbide wide bandgap semiconductor material;
applying chromium dopant to a surface of the p-type silicon carbide wide bandgap semiconductor material;
directing a thermal energy beam onto the silicon carbide wide bandgap semiconductor material in the presence of the chromium dopant atoms for converting a region within the p-type silicon carbide wide bandgap semiconductor material able to emit orange-red electromagnetic radiation upon excitation by electrical energy; and
forming Ohmic conductors for exciting the region of the silicon carbide wide bandgap semiconductor material with electrical energy.

### Claim 6

The process of making a solid state energy conversion device for emitting white electromagnetic radiation upon excitation by electrical energy, comprising the steps of:
providing a p-type silicon carbide wide bandgap semiconductor material;
applying chromium dopant and a nitrogen dopant to a surface of the p-type silicon carbide wide bandgap semiconductor material;
directing a thermal energy beam onto the silicon carbide wide bandgap semiconductor material in the presence of the chromium and nitrogen dopant atoms for converting a region within the p-type silicon carbide wide bandgap semiconductor material able to emit white electromagnetic radiation upon excitation by electrical energy; and
forming Ohmic conductors for exciting the region of the silicon carbide wide bandgap semiconductor material with electrical energy.

### Claim 7

The process of making a solid state energy conversion device for emitting white electromagnetic radiation upon excitation by electrical energy, comprising the steps of:
providing an n-type silicon carbide wide bandgap semiconductor material;
applying chromium dopant and aluminum dopant to a surface of the n-type silicon carbide wide bandgap semiconductor material;
directing a thermal energy beam onto the silicon carbide wide bandgap semiconductor material in the presence of the chromium and aluminum dopant atoms for converting a region within the n-type silicon carbide wide bandgap semiconductor material able to emit white electromagnetic radiation upon excitation by electrical energy; and
forming Ohmic conductors for exciting the region of the silicon carbide wide bandgap semiconductor material with electrical energy.