# US 8,772,060 B2 · Method for manufacturing group III nitride semiconductor light emitting element, group III nitride semiconductor light emitting element and lamp > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,060 B2 - Document ID: US8772060B2 - Status: Granted - Kind: B2 - Application number: 13/119,127 - Filed: 2009-09-14 - Published: 2011-07-07 - Granted: 2014-07-08 - Earliest claimed: 2008-09-16 - Assignees: Toyoda Gosei Co., Ltd. - Applicants: Hiromitsu Sakai; Takeshi Harada - Inventors: Hiromitsu Sakai; Takeshi Harada - Web page: https://patentgrep.com/patent/US8772060B2 ## CPC - H10P 14/3416: {Nitrides} - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/2901: {Materials} - H10P 14/2921: {being crystalline insulating materials} - H10P 14/3216: {Nitrides} - H10P 14/3441: {Conductivity type} - H10P 14/3466: {Crystal orientation} - H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering - H10W 72/07554: {changes in dispositions} - H10W 72/547: {Dispositions of multiple bond wires} - H10W 72/5522: {comprising gold [Au]} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present invention provides a method for manufacturing a group III nitride semiconductor light emitting element, with which warping can be suppressed upon the formation of respective layers on the substrate, a semiconductor layer including a light emitting layer of excellent crystallinity can be formed, and excellent light emission characteristics can be obtained; such a group III nitride semiconductor light emitting element; and a lamp. Specifically disclosed is a method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.1 to 30 μm and at least a part of the edge of the substrate warping toward the principal plane at room temperature, is prepared as the substrate; the X-ray rocking curve full width at half maximum (FWHM) of the (0002) plane is 100 arcsec or less and the X-ray rocking curve FWHM of the (10-10) plane is 300 arcsec or less, in a state where the intermediate layer has been formed on the substrate and where thereafter the underlayer and the n-type contact layer are formed on the intermediate layer; and furthermore the n-type cladding layer, the light emitting layer, the p-type cladding layer, and the p-type contact layer are formed on the n-type contact layer. ## Claims ### Claim 1 A method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.1 to 30 μm and at least a part of the edge of the substrate warping toward the principal plane at room temperature, is prepared as the substrate; a X-ray rocking curve full width at half maximum (FWHM) of a (0002) plane is 100 arcsec or less and a X-ray rocking curve FWHM of a (10-10) plane is 300 arcsec or less, in a state where the intermediate layer has been formed on the substrate and thereafter the underlayer and the n-type contact layer are formed on the intermediate layer; and furthermore the n-type cladding layer, the light emitting layer, the p-type cladding layer, and the p-type contact layer are formed on the n-type contact layer. ### Claim 2 (depends on 1) The method for manufacturing a group III nitride semiconductor light emitting element according to claim 1, wherein the X-ray rocking curve FWHM of the (0002) plane is 50 arcsec or less and the X-ray rocking curve FWHM of the (10-10) plane is 250 arcsec or less, in a state where the underlayer and the n-type contact layer are formed on the intermediate layer. ### Claim 3 (depends on 1) The method for manufacturing a group III nitride semiconductor light emitting element according to claim 1, wherein the substrate is a sapphire substrate, and the intermediate layer is formed on a c-plane of the sapphire substrate. ### Claim 4 (depends on 1) The method for manufacturing a group III nitride semiconductor light emitting element according to claim 1, wherein the intermediate layer is formed from AlXGa1-XN (0≦X≦1). ### Claim 5 (depends on 4) The method for manufacturing a group III nitride semiconductor light emitting element according to claim 4, wherein the intermediate layer is formed from AlN. ### Claim 6 (depends on 1) The method for manufacturing a group III nitride semiconductor light emitting element according to claim 1, wherein the intermediate layer is formed by a sputtering method. ### Claim 7 (depends on 1) The method for manufacturing a group III nitride semiconductor light emitting element according to claim 1, wherein the underlayer is formed from AlGaN. ### Claim 8 (depends on 1) The method for manufacturing a group III nitride semiconductor light emitting element according to claim 1, wherein the underlayer is formed from GaN. ### Claim 9 (depends on 1) The method for manufacturing a group III nitride semiconductor light emitting element according to claim 1, wherein the underlayer is formed by an MOCVD method. ### Claim 10 (depends on 1) The method for manufacturing a group III nitride semiconductor light emitting element according to claim 1, wherein the underlayer is formed by a sputtering method. ### Claim 11 (depends on 1) The method for manufacturing a group III nitride semiconductor light emitting element according to claim 1, wherein a total thickness of the intermediate layer, the underlayer, and the n-type contact layer is set to 8 μm or larger. ### Claim 12 (depends on 1) A group III nitride semiconductor light emitting element produced by the manufacturing method according to claim 1. ### Claim 13 (depends on 12) A lamp comprising the group III nitride semiconductor light emitting element according to claim 12.