# US 8,772,055 B1 · Multizone control of lamps in a conical lamphead using pyrometers

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- Number: US 8,772,055 B1
- Document ID: US8772055B1
- Status: Granted
- Kind: B1
- Application number: 13/796,169
- Filed: 2013-03-12
- Published: 2014-07-17
- Granted: 2014-07-08
- Earliest claimed: 2013-01-16
- Assignees: Applied Materials, Inc.
- Applicants: Joseph M. Ranish; Paul Brillhart; Jose Antonio Marin; Satheesh Kuppurao; Balasubramanian Ramachandran; Swaminathan T. Srinivasan; Mehmet Tugrul Samir
- Inventors: Joseph M. Ranish; Paul Brillhart; Jose Antonio Marin; Satheesh Kuppurao; Balasubramanian Ramachandran; Swaminathan T. Srinivasan; Mehmet Tugrul Samir
- Web page: https://patentgrep.com/patent/US8772055B1

## CPC

- C30B 25/105: {by irradiation or electric discharge}
- C23C 16/4583: {the substrate being supported substantially horizontally}
- C23C 16/481: {by radiant heating of the substrate}
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- C30B 25/08: Reaction chambers; Selection of materials therefor
- C30B 25/12: Substrate holders or susceptors
- C30B 25/14: Feed and outlet means for the gases; Modifying the flow of the reactive gases
- C30B 25/16: Controlling or regulating (controlling or regulating in general G05)
- G01J 5/0007: {of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing}
- G01J 5/10: using electric radiation detectors
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 72/0436: {mainly by radiation}
- H10P 72/0602: {Temperature monitoring}
- H10P 74/20: characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes}
- G01J 2005/106: {Arrays}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

## Claims

### Claim 1

A substrate processing apparatus, comprising:
a vacuum chamber comprising a transparent dome and a transparent floor;
a substrate support disposed inside the vacuum chamber, wherein the substrate support is a platter-like member with low thermal mass;
a plurality of thermal lamps arranged in a lamphead and positioned proximate the transparent floor of the vacuum chamber;
a plurality of thermal sensors disposed within the lamphead and oriented to receive thermal radiation emitted by the substrate and transmitted by the substrate support through the transparent floor from an area proximate the substrate support;
a reflector disposed proximate the transparent dome, the reflector and the transparent dome together defining a thermal control space;
a plurality of power supplies coupled to the thermal lamps in relation to the position of the thermal sensors; and
a controller that adjusts the power supplies based on input from the thermal sensors.

### Claim 2 (depends on 1)

The substrate processing apparatus of claim 1, further comprising an inlet for a thermal control fluid disposed through the reflector in fluid communication with the thermal control space, and an outlet for the thermal control fluid disposed through the reflector and in fluid communication with the thermal control space.

### Claim 3 (depends on 2)

The substrate processing apparatus of claim 2, wherein the transparent dome and the transparent floor are both quartz.

### Claim 4 (depends on 3)

The substrate processing apparatus of claim 3, further comprising a thermal sensor disposed proximate the transparent dome.

### Claim 5 (depends on 4)

The substrate processing apparatus of claim 4, wherein the thermal sensor is disposed in the reflector.