# US 8,771,828 B2 · Sealing film and a semiconductor device using the same

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- Number: US 8,771,828 B2
- Document ID: US8771828B2
- Status: Granted
- Kind: B2
- Application number: 12/299,714
- Filed: 2008-01-24
- Published: 2009-07-30
- Granted: 2014-07-08
- Earliest claimed: 2007-01-26
- Assignees: Hitachi Chemical Company, Ltd.
- Applicants: Hiroyuki Kawakami; Katsuyasu Niijima; Naoki Tomori; Daichi Takemori; Takuya Imai
- Inventors: Hiroyuki Kawakami; Katsuyasu Niijima; Naoki Tomori; Daichi Takemori; Takuya Imai
- Web page: https://patentgrep.com/patent/US8771828B2

## CPC

- H10W 74/47: comprising organic materials, e.g. plastics or resins
- C08G 59/621: {Phenols}
- C08K 3/013: Fillers, pigments or reinforcing additives
- C08L 63/00: Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/473: {containing a filler}
- C08L 2666/54: Inorganic substances
- C08L 2666/72: Fillers; Inorganic pigments; Reinforcing additives
- Y10T 428/24967: Absolute thicknesses specified
- Y10T 428/25: Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
- Y10T 428/26: Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T 428/31511: Of epoxy ether
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09)
- C08L: COMPOSITIONS OF MACROMOLECULAR COMPOUNDS (compositions based on polymerisable monomers C08F, C08G; artificial filaments or fibres D01F; textile treating compositions D06)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A sealing film which includes a resin layer having a flow within the range of 150 to 1800 μm at 80° C., or having a resin layer with a viscosity within the range of 10000 to 100000 Pa·s in a B-stage state at 50 to 100° C. in thermosetting viscoelasticity measurement, and containing: (A) both (a1) a high-molecular-weight component including crosslinking functional groups and having a weight-average molecular weight of 100,000 or more and a Tg within the range of −50 to 50° C., and (a2) a thermosetting component including an epoxy resin as a main component, (B) a filler having an average particle size within the range of 1 to 30 μm, and (C) a colorant, as well as a manufacturing method thereof and a semiconductor device using the same.

## Claims

### Claim 1

A semiconductor device comprising a circuit substrate and a semiconductor element on the circuit substrate, wherein the semiconductor element comprises protruded electrodes sealed with a sealing film,
wherein the sealing film comprises a resin layer containing the following (A), (B) and (C) and having a flow within the range of 150 to 1800 μm at 80° C.:
(A) a resin component containing (a1) a high-molecular-weight component comprising crosslinking functional groups and having a weight-average molecular weight of 100,000 or more and a Tg within the range of −50 to 50° C. and (a2) a thermosetting component comprising an epoxy resin as a main component,
(B) a filler having an average particle size within the range of 1 to 30 μm, and
(C) a colorant, and
wherein the sealing film contains 1 to 300 parts by mass of the filler (B) and 0.01 to 10 parts by mass of the colorant (C), based on 10 parts by mass of the resin component (A) containing 5 to 85% by mass of the high-molecular-weight component (a1) and 15 to 95% by mass of the thermosetting component (a2).

### Claim 2 (depends on 1)

The semiconductor devices according to claim 1, wherein the resin component (A) contains 5 to 80% by mass of the high-molecular-weight component (a1) and 15 to 85% by mass of the thermosetting component (a2).

### Claim 3 (depends on 2)

The semiconductor devices film according to claim 2, wherein the sealing film contains 1 to 300 parts by mass of the filler (B) and 0.01 to 10 parts by mass of the colorant (C), based on 10 parts by mass of the resin component (A).

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the filler (B) is an inorganic filler.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the colorant (C) is a non-white colorant.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein the storage elastic modulus of the resin layer at 35° C. after curing at 170° C. for 1 hour is within the range of 100 to 20000 MPa.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein said flow is within a range of 400 to 1400 μm.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein said resin layer has a viscosity within the range of 10,000 to 100,000 Pa·s in a B-stage state at 50 to 100° C. in thermosetting viscoelasticity measurement.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, further comprising solder balls mounted on the protruded electrodes.

### Claim 10

A semiconductor device comprising a circuit substrate and a semiconductor element on the circuit substrate, wherein the semiconductor element comprises protruded electrodes sealed with a sealing film,
wherein the sealing film comprises a resin layer containing the following (A), (B) and (C) and having a viscosity within the range of 10000 to 100000 Pa·s in a B-stage state at 50 to 100° C. in thermosetting viscoelasticity measurement:
(A) a resin component containing (a1) a high-molecular-weight component comprising crosslinking functional groups and having a weight-average molecular weight of 100,000 or more and a Tg within the range of −50 to 50° C. and (a2) a thermosetting component comprising an epoxy resin as a main component,
(B) a filler having an average particle size within the range of 1 to 30 μm, and
(C) a colorant, and
wherein the sealing film contains 1 to 300 parts by mass of the filler (B) and 0.01 to 10 parts by mass of the colorant (C), based on 10 parts by mass of the resin component (A) containing 5 to 85% by mass of the high-molecular-weight component (a1) and 15 to 95% by mass of the thermosetting component (a2).

### Claim 11 (depends on 10)

The semiconductor device according to claim 10, wherein the sealing film contains 1 to 300 parts by mass of the filler (B) and 0.01 to 10 parts by mass of the colorant (C), based on 10 parts by mass of the resin component (A).

### Claim 12 (depends on 10)

The semiconductor device according to claim 10, wherein the filler (B) is an inorganic filler.

### Claim 13 (depends on 2)

The semiconductor device according to claim 2, wherein the colorant (C) is a non-white colorant.

### Claim 14 (depends on 10)

The semiconductor device according to claim 10, wherein the storage elastic modulus of the resin layer at 35° C. after curing at 170° C. for 1 hour is within the range of 100 to 20000 MPa.

### Claim 15 (depends on 10)

The semiconductor device according to claim 10, wherein said viscosity is within the range of 15000 to 90000 Pa·s in a B-stage state at 50 to 100° C. in thermosetting viscoelasticity measurement.

### Claim 16 (depends on 10)

The semiconductor device according to claim 10, further comprising solder balls mounted on the protruded electrodes.