# US 8,771,632 B2 · Methods of forming metal oxide nanostructures, and nanostructures thereof

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- Number: US 8,771,632 B2
- Document ID: US8771632B2
- Status: Granted
- Kind: B2
- Application number: 13/571,791
- Filed: 2012-08-10
- Published: 2012-12-06
- Granted: 2014-07-08
- Earliest claimed: 2009-07-02
- Assignees: International Business Machines Corporation
- Applicants: Ho-Cheol Kim; Robert D. Miller; Oun Ho Park
- Inventors: Ho-Cheol Kim; Robert D. Miller; Oun Ho Park
- Web page: https://patentgrep.com/patent/US8771632B2

## CPC

- C01G 23/047: Titanium dioxide
- C01B 13/18: by thermal decomposition of compounds, e.g. of salts or hydroxides
- C01B 13/185: {Preparing mixtures of oxides}
- C01P 2002/72: by d-values or two theta-values, e.g. as X-ray diagram
- C01P 2004/03: obtained by SEM
- C01P 2004/04: obtained by TEM, STEM, STM or AFM
- C01P 2006/16: Pore diameter
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

A method of forming a metal oxide nanostructure comprises disposing a chelated oligomeric metal oxide precursor on a solvent-soluble template to form a first structure comprising a deformable chelated oligomeric metal oxide precursor layer; setting the deformable chelated oligomeric metal oxide precursor layer to form a second structure comprising a set metal oxide precursor layer; dissolving the solvent-soluble template with a solvent to form a third structure comprising the set metal oxide precursor layer; and thermally treating the third structure to form the metal oxide nanostructure.

## Claims

### Claim 1

A substrate comprising a free-standing three dimensional chelated oligomeric metal oxide precursor bonded to the substrate, wherein the free-standing three dimensional chelated oligomeric metal oxide precursor is a non-sol-gel type, and the substrate is solvent soluble, wherein the free-standing three dimensional chelated oligomeric metal oxide precursor is of the formula:
wherein R, R′, and R″ are independently a C1-C20 alkyl group, m is an integer from zero to n−1, and n is an integer from 2 to 10,
wherein the free-standing three dimensional chelated oligomeric metal oxide precursor thermally deformable to a metal oxide nanostructure comprising anatase titania.

### Claim 2 (depends on 1)

The substrate of claim 1, wherein the chelated oligomeric metal oxide precursor comprises a chelated oligomeric titanate derived from the reaction of n-butyl polytitanate and a chelating agent.