# US 8,771,540 B2 · Highly dilutable polishing concentrates and slurries

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- Number: US 8,771,540 B2
- Document ID: US8771540B2
- Status: Granted
- Kind: B2
- Application number: 13/848,484
- Filed: 2013-03-21
- Published: 2013-10-31
- Granted: 2014-07-08
- Earliest claimed: 2009-10-16
- Assignees: Fujifilm Planar Solutions, LLC
- Applicants: Fujifilm Planar Solutions, LLC
- Inventors: Hyungjun Kim; Richard Wen; Bin Hu; Minae Tanaka; Deepak Mahulikar
- Web page: https://patentgrep.com/patent/US8771540B2

## CPC

- H10P 52/402: {of semiconductor materials}
- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- H10P 52/403: {of conductive or resistive materials}
- H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.

## Claims

### Claim 1

A method of preparing a chemical mechanical polishing slurry, comprising:
adding water and oxidizer to a concentrate, wherein said concentrate comprises:
about 0.5 wt % to about 10 wt %, based on the total weight of the concentrate, of an abrasive;
about 1 wt % to about 20 wt %, based on the total weight of the concentrate, of a complexing agent; and
a corrosion inhibitor,
wherein said water and said oxidizer are added to said concentrate in an amount governed by the formula:
0.8≦[oxidizer]/f≦2.0,
wherein ƒ=A+B*[complexing agent]C,
wherein A is between 0.35 and 0.8, B is between 0.3 and 0.5, and C is about 1, and
[oxidizer] and [complexing agent] are the amounts of the oxidizer and complexing agent in the chemical mechanical polishing slurry, respectively, to form the chemical mechanical polishing slurry.

### Claim 2 (depends on 1)

The method of claim 1, wherein 0.8≦[oxidizer]/f≦1.3.

### Claim 3 (depends on 1)

The method of claim 1, wherein said oxidizer is present in an amount of about 0.1 wt % to about 5 wt %, based on the total amount of the chemical mechanical polishing slurry.

### Claim 4 (depends on 3)

The method of claim 3, wherein said oxidizer is present in an amount of about 0.4 wt % to about 2 wt %, based on the total amount of the chemical mechanical polishing slurry.

### Claim 5 (depends on 1)

The method of claim 1, wherein said corrosion inhibitor is present in an amount of 0.001 wt % to about 1 wt %, based on the total weight of the concentrate.

### Claim 6 (depends on 1)

The method of claim 1, wherein said corrosion inhibitor is present in an amount of 0.001 wt % to about 0.2 wt %, based on the total weight of the concentrate.

### Claim 7 (depends on 1)

The method of claim 1, wherein B is between 0.33 and 0.46.

### Claim 8 (depends on 1)

The concentrate of claim 1, wherein said abrasive is selected from the group consisting of alumina, fumed silica, colloidal silica, coated particles, titania, ceria, zirconia, and any combinations thereof.

### Claim 9 (depends on 1)

The concentrate of claim 1, wherein said complexing agent is selected from the group consisting of organic acids and their salts, amino acetic acids, amino acids, glycine, alanine, carboxylic acids, polyamines, ammonia based compounds, quaternary ammonium compounds, inorganic acids, compounds with both carboxylic and amino functions, ethylenediaminetetraacetic acid, diethylene triamine pentaacetic acid, and any mixtures thereof.

### Claim 10 (depends on 1)

The concentrate of claim 1, wherein corrosion inhibitor is selected from the group consisting of benzotriazole and its derivatives, tolyl triazole and its derivatives, and azoles.

### Claim 11 (depends on 1)

The method of claim 1, wherein said concentrate is diluted with said water so that said abrasive, said complexing agent, and said corrosion inhibitor are present in amounts in said chemical mechanical polishing slurry that are at least five times less than in said concentrate.

### Claim 12 (depends on 1)

The method of claim 1, wherein said concentrate is diluted with said water so that said abrasive, said complexing agent, and said corrosion inhibitor are present in amounts in said chemical mechanical polishing slurry that are at least ten times less than in said concentrate.

### Claim 13 (depends on 1)

The method of claim 1, wherein said concentrate is diluted with said water so that said abrasive, said complexing agent, and said corrosion inhibitor are present in amounts in said chemical mechanical polishing slurry that are at least twenty times less than in said concentrate.

### Claim 14 (depends on 1)

A method of removing a copper layer from a substrate, comprising the step of contacting the copper layer with the chemical mechanical polishing slurry of claim 1, wherein the chemical mechanical polishing slurry removes said copper layer at a rate that is at least 75% of a peak removal rate of the chemical mechanical polishing slurry.