# US 8,771,527 B2 · Method of manufacturing an extreme ultraviolet mask

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- Number: US 8,771,527 B2
- Document ID: US8771527B2
- Status: Granted
- Kind: B2
- Application number: 13/674,762
- Filed: 2012-11-12
- Published: 2013-03-21
- Granted: 2014-07-08
- Earliest claimed: 2010-02-01
- Assignees: SK hynix Inc.
- Applicants: SK Hynix Inc.
- Inventors: Jae In Moon
- Web page: https://patentgrep.com/patent/US8771527B2

## CPC

- G03F 1/24: Reflection masks; Preparation thereof
- G03F 1/38: Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F 1/54: Absorbers, e.g. of opaque materials
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A method of manufacturing an extreme ultraviolet (EUV) mask includes forming a first multi-layered thin film over a quartz substrate, forming a structure pattern over the first multi-layered thin film, and forming a second multi-layered thin film over the structure pattern and the first multi-layered thin film. The second multi-layered thin film is formed so that a periodicity of the second multi-layered thin film formed over the structure pattern is different from a periodicity of the second multi-layered thin film formed over the first multi-layered thin film.

## Claims

### Claim 1

A method of manufacturing an extreme ultraviolet (EUV) mask, the method comprising:
forming a first multi-layered thin film over a quartz substrate;
forming a structure pattern over the first multi-layered thin film; and
forming a second multi-layered thin film over the structure pattern and the first multi-layered thin film,
wherein a periodicity of the second multi-layered thin film formed over the structure pattern is different from a periodicity of the second multi-layered thin film formed over the first multi-layered thin film.

### Claim 2 (depends on 1)

The method of claim 1, wherein each of the first and second multi-layered thin films comprises a molybdenum layer and a silicon layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein each of the first and second multi-layered thin films has a stack structure including 40 to 60 layers of molybdenum and 40 to 60 layers of silicon that are alternately stacked.

### Claim 4 (depends on 1)

The method of claim 1, wherein forming the structure pattern includes:
forming a structure layer over the first multi-layered thin film;
forming a photoresist pattern over the structure layer in an absorption region;
etching the structure layer by using the photoresist pattern as an etch mask to form the structure pattern; and
removing the photoresist pattern.

### Claim 5 (depends on 1)

The method of claim 1, wherein the structure pattern comprises substantially a same material as that of the first and second multi-layered thin films.

### Claim 6 (depends on 1)

The method of claim 1, wherein the structure pattern comprises an insulating layer.

### Claim 7 (depends on 1)

The method of claim 1, wherein the structure pattern is used as an assist feature.

### Claim 8 (depends on 1)

The method of claim 1, wherein the structure pattern is formed between the first multi-layered thin film and the second multi-layered thin film.

### Claim 9 (depends on 1)

The method of claim 1, wherein the structure pattern and portions of the first and second multi-layered thin films corresponding to the structure pattern form an absorption region for absorbing light, and remaining portions of the first and second multi-layered thin films form a reflection region for reflecting the light.

### Claim 10 (depends on 1)

The method of claim 1, further comprising:
after forming the second multi-layered thin film, performing a chemical mechanical polishing process.

### Claim 11 (depends on 10)

The method of claim 10, wherein the chemical mechanical polishing process is performed on the second multi-layered thin film so that the second multi-layered thin film has a planarized top surface.