# US 8,771,456 B2 · Method of manufacturing a semiconductor device and substrate separating apparatus

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- Number: US 8,771,456 B2
- Document ID: US8771456B2
- Status: Granted
- Kind: B2
- Application number: 13/790,266
- Filed: 2013-03-08
- Published: 2013-09-26
- Granted: 2014-07-08
- Earliest claimed: 2012-03-23
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Noriko Shimizu; Shinya Takyu
- Web page: https://patentgrep.com/patent/US8771456B2

## CPC

- H10P 72/0428: {Apparatus for mechanical treatment or grinding or cutting}
- H10P 50/287: {by chemical means}
- H10P 72/74: {using temporarily an auxiliary support}
- H10P 72/7448: {the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer}
- H10P 90/128: {by edge treatment, e.g. chamfering}
- B29C 65/02: by heating, with or without pressure
- B29C 65/48: using adhesives {, i.e. using supplementary joining material; solvent bonding}
- B29C 66/004: {Preventing sticking together, e.g. of some areas of the parts to be joined}
- B32B 7/06: permitting easy separation
- B32B 37/26: with at least one layer which influences the bonding during the lamination process, e.g. release layers or pressure equalising layers
- B32B 38/0004: {Cutting, tearing or severing, e.g. bursting; Cutter details (cutting in general B26D; laminating combined with punching or perforating B32B38/04; removing all or part of the layers B32B38/10; cutting in combination with laying up and registration B32B38/185 takes precedence)}
- B32B 38/10: Removing layers, or parts of layers, mechanically or chemically
- B32B 38/185: {combined with the cutting of one or more layers}
- B32B 43/006: {Delaminating}
- H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes}
- H10P 72/7412: {the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support}
- H10P 72/7416: {used during dicing or grinding}
- H10P 72/7422: {used to protect an active side of a device or wafer}
- H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer}
- Y10T 156/1052: with cutting, punching, tearing or severing
- Y10T 156/1111: Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
- Y10T 156/1189: with shearing during delaminating
- Y10T 156/1994: Means for delaminating from release surface
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B29C: SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING (making preforms B29B11/00; making laminated products by combining previously unconnected layers which become one product whose layers will remain together B32B37/00 - B32B41/00)
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

According to one embodiment, there is disclosed a method of manufacturing a semiconductor device forming a release layer on a region excluding a peripheral edge portion of a surface of a first substrate, bonding a second substrate to at least a region including the release layer of the surface of the first substrate via an adhesive layer, removing physically a peripheral edge portion of the second substrate in a manner that at least a surface of the adhesive layer right under the peripheral edge portion of the second substrate is exposed, the adhesive layer is caused to remain between the peripheral edge portion of the first substrate and the second substrate, and adhesion between the first and second substrates is maintained, and then dissolving the adhesive layer.

## Claims

### Claim 1

A method of manufacturing a semiconductor device comprising:
forming a release layer on a region excluding a peripheral edge portion of a surface of a first substrate;
bonding a second substrate to at least a region including the release layer of the surface of the first substrate via an adhesive layer; and
removing physically a peripheral edge portion of the second substrate in a manner that at least a surface of the adhesive layer right under the peripheral edge portion of the second substrate is exposed, the adhesive layer is caused to remain between the peripheral edge portion of the first substrate and the second substrate, and adhesion between the first and second substrates is maintained, and then dissolving the adhesive layer.

### Claim 2 (depends on 1)

The method according to claim 1,
wherein the peripheral edge portion of the second substrate is removed in a manner that an outer edge of the second substrate is positioned at an outer side from an outer edge of the release layer in plan view.

### Claim 3 (depends on 2)

The method according to claim 2,
wherein the peripheral edge portion of the second substrate is removed in a manner that a distance (W1) between the outer edge of the second substrate and the outer edge of the release layer is 0.5 mm or more.

### Claim 4 (depends on 3)

The method according to claim 3,
wherein a thickness of an adhesive layer is 20 μm or more.

### Claim 5 (depends on 2)

The method according to claim 2,
wherein, the peripheral edge portion of the second substrate is removed in a manner that the adhesive right under the peripheral edge portion of the second substrate is removed substantially completely.

### Claim 6 (depends on 2)

The method according to claim 2,
wherein, the peripheral edge portion of the second substrate is removed in a manner that only a side surface of the adhesive layer is exposed.

### Claim 7 (depends on 1)

The method according to claim 1,
wherein, the peripheral edge portion of the second substrate is removed in a manner that an outer edge of the second substrate is positioned at an inner side from an outer edge of the release layer in plan view.

### Claim 8 (depends on 7)

The method according to claim 7,
wherein the peripheral edge portion of the second substrate is removed in a manner that a distance (W2) between the outer edge of the second substrate and the outer edge of the release layer is 0.5 mm or more.

### Claim 9 (depends on 7)

The method according to claim 7,
wherein, the peripheral edge portion of the second substrate is removed in a manner that at least about half of a thickness of the adhesive right under the peripheral edge portion of the second substrate is caused to remain.

### Claim 10 (depends on 1)

The method according to claim 1,
wherein a thickness of the adhesive layer is 5 to 100 μm.

### Claim 11 (depends on 1)

The method according to claim 1,
wherein the second substrate is a semiconductor wafer.

### Claim 12 (depends on 11)

The method according to claim 11,
wherein the semiconductor wafer has a circuit pattern on a surface facing the first substrate thereof.

### Claim 13 (depends on 11)

The method according to claim 11,
wherein the semiconductor wafer is not edge-trimmed.

### Claim 14 (depends on 1)

The method according to claim 1,
wherein the release layer is made of a non-releasable resin that does not exhibit adhesiveness to the adhesive layer.

### Claim 15 (depends on 1)

The method according to claim 1,
wherein a distance (D) from an outer edge of the adhesive layer before the removal to an outer edge of the release layer is 1.0 to 4.0 mm.

### Claim 16 (depends on 1)

The method according to claim 1,
wherein the dissolution is performed by supplying a solvent to dissolve the adhesive to a vicinity of an exposed surface of the adhesive layer.

### Claim 17 (depends on 16)

The method according to claim 16,
wherein the solvent is supplied while rotating the bonded substrates.

### Claim 18 (depends on 1)

The method according to claim 1,
wherein the adhesive is dissolvable in an organic solvent.

### Claim 19 (depends on 1)

The method according to claim 1,
wherein the peripheral edge portion of the second substrate is removed by using a blade.