# US 8,771,427 B2 · Method of manufacturing integrated circuit devices

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- Number: US 8,771,427 B2
- Document ID: US8771427B2
- Status: Granted
- Kind: B2
- Application number: 13/603,082
- Filed: 2012-09-04
- Published: 2013-09-12
- Granted: 2014-07-08
- Earliest claimed: 1996-09-30
- Assignees: Akrion Systems, LLC
- Applicants: Mario E. Bran
- Inventors: Mario E. Bran
- Web page: https://patentgrep.com/patent/US8771427B2

## CPC

- B08B 17/02: Preventing deposition of fouling or of dust
- H10P 70/00: Cleaning of wafers, substrates or parts of devices
- B06B 3/00: Methods or apparatus specially adapted for transmitting mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B08B 3/12: by sonic or ultrasonic vibrations
- H10P 72/0414: {using mainly spraying means, e.g. nozzles}
- H10P 72/0416: {with the semiconductor substrates being dipped in baths or vessels}
- Y10S 134/902: Semiconductor wafer
- B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B06B: METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, {e.g.} FOR PERFORMING MECHANICAL WORK IN GENERAL (for particular applications, see the relevant subclasses, e.g. B07B1/40, B23Q17/12, B24B31/06; measurement of mechanical vibrations G01H; in direction finding, locating, distance or velocity measuring G01S; {generating seismic energy G01V1/02}; control of mechanical vibrations in general G05D; sound-producing devices, e.g. bells, sirens, whistles G10K, {e.g. methods or devices for transmitting, conducting, or directing sound in general G10K11/00}; generation of electrical oscillations H03B; electromechanical resonators in general H03H; electromechanical transducers {for communication techniques, e.g. microphones, speakers} H04R)
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A method for manufacturing integrated circuit devices. In one aspect, the invention may be a method of manufacturing integrated circuit devices comprising: supporting a semiconductor wafer in a substantially horizontal orientation; providing a transducer assembly comprising a probe having a forward portion, a rear portion and no more than one piezoelectric transducer element coupled to the rear portion; supporting the transducer assembly so that the forward portion is adjacent but spaced from a first surface of the semiconductor wafer; rotating the semiconductor wafer; applying a fluid to the first surface of the semiconductor wafer to form a film of the fluid between a portion of the forward portion and the first surface of the semiconductor wafer; and transmitting acoustical energy generated by the piezoelectric transducer element into the film of the fluid via the forward portion, the acoustical energy loosening particles from the first surface of the semiconductor wafer.

## Claims

### Claim 1

A method of manufacturing integrated circuit devices comprising:
supporting a semiconductor wafer in a substantially horizontal orientation;
providing a transducer assembly comprising a probe having a forward portion, and a rear portion and no more than one piezoelectric transducer element coupled to the rear portion of the probe;
supporting the transducer assembly so that the forward portion of the probe is adjacent to but spaced from a first surface of the semiconductor wafer;
rotating the semiconductor wafer;
applying a fluid to the first surface of the semiconductor wafer so as to form a film of the fluid between at least a portion of the forward portion and the first surface of the semiconductor wafer; and
transmitting acoustical energy that is generated by the no more than one piezoelectric transducer element into the film of the fluid via the forward portion, the acoustical energy loosening particles from the first surface of the semiconductor wafer.

### Claim 2 (depends on 1)

The method of claim 1 wherein the forward portion is a cylindrical rod.

### Claim 3 (depends on 1)

The method of claim 1 wherein the rear portion has a cross-section that is greater than a cross-section of the forward portion.

### Claim 4 (depends on 3)

The method of claim 3 wherein the acoustical energy that is generated by the transducer is focused as it is transmitted through the probe from the rear portion to the forward portion.

### Claim 5 (depends on 1)

The method of claim 1 wherein the semiconductor wafer is supported in a gaseous atmosphere when the acoustical energy is transmitted to the film of the fluid.

### Claim 6 (depends on 1)

The method of claim 1 wherein the fluid is applied to the first surface of the semiconductor wafer by a nozzle.

### Claim 7 (depends on 1)

The method of claim 1 wherein the acoustical energy is megasonic energy.