# US 8,771,417 B2 · Exhaust unit, exhaust method using the exhaust unit, and substrate processing apparatus including the exhaust unit

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- Number: US 8,771,417 B2
- Document ID: US8771417B2
- Status: Granted
- Kind: B2
- Application number: 12/676,519
- Filed: 2008-09-04
- Published: 2010-08-19
- Granted: 2014-07-08
- Earliest claimed: 2007-09-04
- Assignees: Eugene Technology Co., Ltd.
- Applicants: Song Keun Yoon; Byoung Gyu Song; Jae Ho Lee; Kyong Hun Kim
- Inventors: Song Keun Yoon; Byoung Gyu Song; Jae Ho Lee; Kyong Hun Kim
- Web page: https://patentgrep.com/patent/US8771417B2

## CPC

- H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream}
- H01J 37/3244: {Gas supply means}
- H01J 37/32449: {Gas control, e.g. control of the gas flow}
- H01J 37/32623: {Mechanical discharge control means}
- H01J 37/32834: {Exhausting}
- H10P 72/0421: {for drying etching}
- H01J 2237/3323: uniformity
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A substrate processing apparatus includes a chamber having an inner space where a process is carried out with respect to a substrate and an exhaust unit for exhausting substance in the inner space to the outside. The exhaust unit includes a first exhaust plate located at an upstream of an exhaust path of the substance, the first exhaust plate having first exhaust holes, and a second exhaust plate located at a downstream of the exhaust path, the first exhaust plate having second exhaust holes. The first exhaust plate is disposed outside a support member, and the second exhaust plate is disposed below the first exhaust plate generally in parallel to the first exhaust plate. The exhaust unit further includes first covers for selectively opening and closing the first exhaust holes and second covers for selectively opening and closing the second exhaust holes.

## Claims

### Claim 1

A substrate processing apparatus comprising:
a chamber having an inner space where a process is carried out with respect to a substrate;
a support member disposed in the chamber for supporting the substrate; and
an exhaust unit for exhausting substance in the inner space to the outside,
wherein the exhaust unit comprises:
a first exhaust plate located at an upstream of an exhaust path of the substance, the first exhaust plate having a first opening in which the support member is installed and a plurality of first exhaust holes that are arranged to surround the first opening, the substance being exhausted through the first exhaust holes;
a second exhaust plate located at a downstream of the exhaust path, the second exhaust plate having a second opening in which the support member is installed and a plurality of second exhaust holes that are arranged to surround the second opening, the substance being exhausted through the second exhaust holes;
a plurality of first covers being separated from each other, some of the first covers being removed from the top surface of the first exhaust plate, respectively, to open some of the first exhaust holes so that the substance can be exhausted through some of the first exhaust holes, the remaining first covers being coupled to the top surface of the first exhaust plate, respectively, to close the remaining first exhaust holes so that the substance cannot be exhausted through the remaining first exhaust holes, in order that the uniformity of the process can be secured; and
a plurality of second covers being separated from each other, some of the second covers being removed from the top surface of the second exhaust plate, respectively, to open some of the second exhaust holes so that the substrate can be exhausted through some of the second exhaust holes, the remaining second covers being coupled to the top surface of the second exhaust plate, respectively, to close the remaining second exhaust holes so that the substance cannot be exhausted through the remaining second exhaust holes, in order that the uniformity of the process can be secured,
wherein the first exhaust holes comprise: first inside exhaust holes arranged on a concentric circle about a center of the first exhaust plate; and first outside exhaust holes disposed outside the first inside exhaust holes, the first outside exhaust holes being arranged on another concentric circle about the center of the first exhaust plate, wherein the second exhaust holes comprise: second inside exhaust holes arranged on a concentric circle about a center of the second exhaust plate; and second outside exhaust holes disposed outside the second inside exhaust holes, the second outside exhaust holes being arranged on another concentric circle about the center of the second exhaust plate.

### Claim 2 (depends on 1)

The substrate processing apparatus according to claim 1 wherein the first exhaust plate is disposed outside the support member, and the second exhaust plate is disposed below the first exhaust plate generally in parallel to the first exhaust plate.

### Claim 3 (depends on 1)

The substrate processing apparatus according to claim 1, further comprising: a gas supply unit for supplying a source gas into the inner space; and a coil for inducing an electric field in the inner space to generate plasma from the source gas.

### Claim 4 (depends on 3)

The substrate processing apparatus according to claim 3, further comprising: a guide tube disposed above the support member for concentrating the plasma generated in the inner space on the support member.

### Claim 5 (depends on 4)

The substrate processing apparatus according to claim 4, wherein the guide tube has a sectional shape generally corresponding to the shape of the substrate.

### Claim 6 (depends on 3)

The substrate processing apparatus according to claim 3, wherein the chamber comprises: a process chamber in which the support member is disposed, the process chamber being configured such that the process is carried out by the plasma in the process chamber; and a generation chamber disposed above the process chamber, the generation chamber being configured such that the plasma is generated by the coil in the generation chamber, the guide tube extending from a top wall of the process chamber to a bottom wall of the process chamber.

### Claim 7 (depends on 3)

The substrate processing apparatus according to claim 3, wherein the chamber comprises: a process chamber in which the support member is disposed, the process chamber being configured such that the process is carried out by the plasma in the process chamber; and a generation chamber extending upward from a top wall of the process chamber, the generation chamber being configured such that the plasma is generated by the coil in the generation chamber, the guide tube extending from a side wall of the generation chamber to a bottom wall of the process chamber.

### Claim 8 (depends on 1)

The substrate processing apparatus according to claim 1, further comprising: a gas supply unit for supplying a source gas into the inner space; a coil for inducing an electric field in the inner space to generate plasma from the source gas; a showerhead disposed above the support member in parallel to the support member for supplying the plasma to the substrate placed on the support member; and a support frame for fixing the showerhead to a top of the support member.

### Claim 9 (depends on 8)

The substrate processing apparatus according to claim 8, wherein the first exhaust plate is disposed outside the support member, and the support frame is installed on the first exhaust plate.

### Claim 10 (depends on 4)

The substrate processing apparatus according to claim 4, wherein the chamber comprises: a process chamber in which the support member is disposed, the process chamber being configured such that the process is carried out by the plasma in the process chamber; and a generation chamber disposed above the process chamber, the generation chamber being configured such that the plasma is generated by the coil in the generation chamber, the guide tube extending from a top wall of the process chamber to a bottom wall of the process chamber.

### Claim 11 (depends on 5)

The substrate processing apparatus according to claim 5, wherein the chamber comprises: a process chamber in which the support member is disposed, the process chamber being configured such that the process is carried out by the plasma in the process chamber; and a generation chamber disposed above the process chamber, the generation chamber being configured such that the plasma is generated by the coil in the generation chamber, the guide tube extending from a top wall of the process chamber to a bottom wall of the process chamber.

### Claim 12 (depends on 4)

The substrate processing apparatus according to claim 4, wherein the chamber comprises: a process chamber in which the support member is disposed, the process chamber being configured such that the process is carried out by the plasma in the process chamber; and a generation chamber extending upward from a top wall of the process chamber, the generation chamber being configured such that the plasma is generated by the coil in the generation chamber, the guide tube extending from a side wall of the generation chamber to a bottom wall of the process chamber.

### Claim 13 (depends on 5)

The substrate processing apparatus according to claim 5, wherein the chamber comprises: a process chamber in which the support member is disposed, the process chamber being configured such that the process is carried out by the plasma in the process chamber; and a generation chamber extending upward from a top wall of the process chamber, the generation chamber being configured such that the plasma is generated by the coil in the generation chamber, the guide tube extending from a side wall of the generation chamber to a bottom wall of the process chamber.