# US 8,771,416 B2 · Substrate processing apparatus with an insulator disposed in the reaction chamber > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,771,416 B2 - Document ID: US8771416B2 - Status: Granted - Kind: B2 - Application number: 12/822,293 - Filed: 2010-06-24 - Published: 2011-01-06 - Granted: 2014-07-08 - Earliest claimed: 2009-07-02 - Assignees: Hitachi Kokusai Electric Inc. - Applicants: Shuhei Saido; Takatomo Yamaguchi; Kenji Shirako - Inventors: Shuhei Saido; Takatomo Yamaguchi; Kenji Shirako - Web page: https://patentgrep.com/patent/US8771416B2 ## CPC - C30B 29/36: Carbides - C23C 16/325: {Silicon carbide} - C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) - C30B 25/10: Heating of the reaction chamber or the substrate - C30B 25/165: {the flow of the reactive gases} - Y10T 117/10: Apparatus - Y10T 117/1016: with means for treating single-crystal [e.g., heat treating] - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A substrate processing apparatus comprises: a reaction chamber to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, the insulator having a cylindrical shape with a closed end facing the closed end of the heating target object; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system to supply at least a source gas into the reaction chamber; and a controller to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate. ## Claims ### Claim 1 A substrate processing apparatus comprising: a reaction chamber configured to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, wherein the insulator is made of a material different from that of the heating target object and has a cylindrical shape with a closed end at a same side as that of the heating target object, and wherein the insulator comprises: a plurality of first members arranged along a circumferential direction of the insulator with first gaps therebetween; and a plurality of second members arranged along the circumferential direction with second gaps therebetween so as to surround the plurality of first members, the second gaps being circumferentially shifted with respect to the first gaps; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system configured to supply at least a source gas into the reaction chamber; and a controller configured to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate. ### Claim 2 (depends on 1) The substrate processing apparatus of claim 1, wherein the insulator comprises: a cylindrical sidewall part; and a cover part configured to close an end of the sidewall part, and wherein the sidewall part and the cover part are different members. ### Claim 3 (depends on 1) The substrate processing apparatus of claim 1, wherein the insulator comprises: a cylindrical sidewall part; and a cover part configured to close an end of the sidewall part, and wherein the sidewall part has a greater thickness at a lower or upper end where the cover part is provided than at the region where the substrate is disposed. ### Claim 4 (depends on 1) The substrate processing apparatus of claim 1, wherein the insulator comprises: a cylindrical sidewall part; and a cover part configured to close an end of the sidewall part, and wherein the cover part has a greater thickness at a center part than at a peripheral part. ### Claim 5 (depends on 1) The substrate processing apparatus of claim 1, wherein the insulator comprises: a cylindrical sidewall part; and a cover part configured to close an end of the sidewall part, and wherein the induction heating unit extends from the region where the substrate is disposed to at least the cover part. ### Claim 6 (depends on 1) The substrate processing apparatus of claim 1, wherein the insulator comprises: a cylindrical sidewall part; and a cover part configured to close an end of the sidewall part, and wherein the induction heating unit has a greater induced current density at the end of the sidewall part where the cover part is provided or the other end of the sidewall part than at the region where the substrate is disposed. ### Claim 7 (depends on 1) The substrate processing apparatus of claim 1, wherein the insulator comprises: a cylindrical sidewall part; and a cover part configured to close an end of the sidewall part, and wherein the induction heating unit has a greater induced current density at the other end of the sidewall part than at the end of the sidewall part where the cover part is provided. ### Claim 8 (depends on 1) The substrate processing apparatus of claim 1, wherein the material different from that of the heating target object is resistant to induction heating. ### Claim 9 (depends on 8) The substrate processing apparatus of claim 8, wherein the material different from that of the heating target object is resistant to thermal conduction. ### Claim 10 (depends on 9) The substrate processing apparatus of claim 9, wherein the material different from that of the heating target object comprises carbon felt.