# US 8,771,389 B2 · Methods of making and attaching TSP material for forming cutting elements, cutting elements having such TSP material and bits incorporating such cutting elements > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,771,389 B2 - Document ID: US8771389B2 - Status: Granted - Kind: B2 - Application number: 12/775,420 - Filed: 2010-05-06 - Published: 2010-11-11 - Granted: 2014-07-08 - Earliest claimed: 2009-05-06 - Assignees: Smith International, Inc. - Applicants: Madapusi K. Keshavan; Monte Russell - Inventors: Madapusi K. Keshavan; Monte Russell - Web page: https://patentgrep.com/patent/US8771389B2 ## CPC - E21B 10/5676: {having a cutting face with different segments, e.g. mosaic-type inserts} - B32B 18/00: Layered products essentially comprising ceramics, e.g. refractory products - C04B 35/52: based on carbon, e.g. graphite - C04B 35/645: Pressure sintering - C04B 37/001: {directly with other burned ceramic articles} - C04B 37/006: {consisting of metals or metal salts} - C22C 19/07: based on cobalt - C22C 26/00: Alloys containing diamond {or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes} - C22C 29/08: based on tungsten carbide - B22F 2998/10: Processes characterised by the sequence of their steps - C04B 2235/3847: Tungsten carbides - C04B 2235/427: Diamond - C04B 2235/80: Phases present in the sintered or melt-cast ceramic products other than the main phase - C04B 2237/12: Metallic interlayers - C04B 2237/36: Non-oxidic - C04B 2237/363: Carbon - C04B 2237/60: Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface - C22C 2204/00: End product comprising different layers, coatings or parts of cermet - Y10T 428/12028: Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.] - Y10T 428/12056: Entirely inorganic - Y10T 428/24355: Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] - Y10T 428/30: Self-sustaining carbon mass or layer with impregnant or other layer - E21B: EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS - B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM - C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE - C22C: ALLOYS (treatment of alloys C21D, C22F) - B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A method of forming one or more TSP compacts is provided. The method includes placing one or more TSP material layers in an enclosure and surrounding each TSP material layer with at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder, or partially sintered tungsten carbide substrates. The method also includes exposing the enclosure to a high temperature high pressure process wherein the at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder, or partially sintered tungsten carbide substrates bond to the TSP material layers forming a stack of TSP material layers including the TSP material layers one over the other with tungsten carbide bonded to each of the TSP material layers and encapsulating each of the TSP material layers. ## Claims ### Claim 1 A method of forming TSP compacts comprising: placing a plurality of pre-sintered TSP material layers in an enclosure one pre-sintered TSP material layer over another and surrounding each pre-sintered TSP material layer with at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder including an infiltrant, or partially sintered tungsten carbide substrates; exposing said enclosure to a high temperature high pressure sintering process wherein said at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder, or partially sintered tungsten carbide substrates bonds to said TSP material layers forming a stack of re-processed TSP material layers comprising said re-processed TSP material layers one over the other with tungsten carbide bonded to each of said re-processed TSP material layers and encapsulating each of said re-processed TSP material layers; removing said stack from said enclosure; cutting said stack forming a plurality of said re-processed TSP material layers, each of said re-processed TSP material layers having a tungsten carbide material layer formed from said at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder, or partially sintered tungsten carbide substrates bonded to one surface thereof; and attaching said tungsten carbide layer bonded to one of said plurality of re-processed TSP material layers to a tungsten carbide substrate forming said TSP compact. ### Claim 2 (depends on 1) The method as recited in claim 1 wherein said exposing causes at least a material from at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder including an infiltrant, or partially sintered tungsten carbide substrates to infiltrate said re-processed TSP material layers, said method further comprising leaching at least a substantial portion of said at least a material from at least a portion of one of said re-processed TSP material layers after said exposing. ### Claim 3 (depends on 2) The method as recited in claim 2 wherein said re-processed TSP material layer is fully infiltrated by said at least a material. ### Claim 4 (depends on 1) The method as recited in claim 1 further comprising: placing a layer of diamond particles in an enclosure and encapsulating said layer of diamond particles with at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder including a catalyst, or partially sintered tungsten carbide substrates; high pressure and high temperature sintering said enclosure to form a layer of polycrystalline diamond surrounded by tungsten carbide, said layer of polycrystalline diamond having a network of interconnected diamond crystals, wherein interstitial spaces are defined between the diamond crystals occupied by at least a catalyst material which infiltrated said diamond particles from said at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder including a catalyst, or partially sintered tungsten carbide substrates; removing the tungsten carbide to reveal said layer of polycrystalline diamond; and leaching said layer of polycrystalline diamond to remove at least a substantial portion of said catalyst material from at least a section of said layer of polycrystalline diamond to form at least one of said pre-sintered TSP material layers. ### Claim 5 (depends on 1) The method as recited in claim 1 further comprising: placing a plurality of layers of diamond particles in an enclosure and encapsulating said layers of diamond particles with at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder including a catalyst, or partially sintered tungsten carbide substrates; high pressure and high temperature sintering said enclosure to form a plurality of layers of polycrystalline diamond surrounded by tungsten carbide, said layers of polycrystalline diamond having a network of interconnected diamond crystals, wherein interstitial spaces are defined between the diamond crystals occupied by at least a catalyst material which infiltrated said diamond particles from said at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder including a catalyst, or partially sintered tungsten carbide substrates; removing the tungsten carbide to reveal said layers of polycrystalline diamond; and leaching said layers of polycrystalline diamond to remove at least a substantial portion of said catalyst material from at least a section of each of said layers of polycrystalline diamond to form said pre-sintered TSP material layers. ### Claim 6 (depends on 5) The method as recited in claim 5 wherein leaching comprises leaching said layers of polycrystalline diamond to remove at least a substantial portion of said catalyst material from the entire of each of said layers of polycrystalline diamond to form said pre-sintered TSP material layers. ### Claim 7 A method for forming TSP material comprising: placing a layer of diamond particles and tungsten carbide pellets in an enclosure, wherein said pellets are mixed in the diamond particles; high pressure and high temperature sintering said enclosure forming a layer of polycrystalline diamond with tungsten carbide pellets embedded therein, wherein during said sintering process a catalyst from said tungsten carbide pellets infiltrates interstitial spaces defined between said diamond particles; and removing at least a substantial portion of said catalyst from at least a portion of said polycrystalline diamond layer with embedded tungsten carbide pellets forming said TSP material layer. ### Claim 8 (depends on 7) The method as recited in claim 7 wherein said layer of diamond particles and tungsten carbide pellets is a first layer and wherein the method further comprises placing a second layer of tungsten carbide pellets adjacent said first layer in said enclosure, wherein after high pressure and high temperature sintering said layers of tungsten carbide pellets form a layer of tungsten carbide. ### Claim 9 (depends on 8) The method as recited in claim 8 further comprising placing a third layer of diamond particles adjacent the first layer in said enclosure, wherein the first layer is sandwiched between the second and third layers in said enclosure, wherein after high temperature and high pressure sintering a compact is formed comprising the tungsten carbide layer attached to polycrystalline diamond layer having a first portion without tungsten carbide pellets and a second portion with embedded tungsten carbide pellets. ### Claim 10 (depends on 9) The method as recited in claim 9 wherein the tungsten carbide forming said pellets has a grain size which is greater than a maximum grain size of said diamond particles. ### Claim 11 (depends on 9) The method as recited in claim 9 wherein said first layer comprises 80% by volume diamond particles and 20% by volume tungsten carbide pellets. ### Claim 12 (depends on 9) The method as recited in claim 9 wherein said first layer comprises 80% to 95% by volume diamond particles and 5% to 20% by volume tungsten carbide pellets. ### Claim 13 (depends on 7) The method as recited in claim 7 wherein said first layer comprises 80% by volume diamond particles and 20% by volume tungsten carbide pellets. ### Claim 14 (depends on 7) The method as recited in claim 7 wherein said first layer comprises 80% to 95% by volume diamond particles and 5% to 20% by volume tungsten carbide pellets. ### Claim 15 (depends on 7) The method as recited in claim 7 wherein said layer of diamond particles and tungsten carbide pellets is a first layer and wherein the method further comprises placing a second layer of diamond particles adjacent said first layer in said enclosure, wherein after high temperature and high pressure sintering a polycrystalline diamond layer is formed having a first portion without tungsten carbide pellets and a second portion with embedded tungsten carbide pellets. ### Claim 16 A method of forming a TSP material compact comprising; placing at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder including an infiltrant, or partially sintered tungsten carbide and at least a pre-sintered TSP material layer in an enclosure, wherein the at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder including an infiltrant, or partially sintered tungsten carbide substrates encapsulates the at least a TSP material layer; exposing the enclosure to a high temperature high pressure process forming at least a layer of re-processed TSP material bonded to a layer of tungsten carbide; and attaching said layer of tungsten carbide to a substrate forming said TSP material compact. ### Claim 17 (depends on 16) The method as recited in claim 16 wherein the tungsten carbide layer encapsulates the at least a re-processed TSP material layer. ### Claim 18 (depends on 17) The method as recited in claim 17 wherein the at least a pre-sintered TSP material layer is a single pre-sintered TSP material layer, the method further comprising removing a portion of said tungsten carbide layer exposing a surface of the re-processed TSP material layer and a periphery of the re-processed TSP material layer, wherein attaching comprises attaching a remaining portion of said tungsten carbide layer to said substrate, and wherein said remaining portion is sandwiched between the substrate and the re-processed TSP material layer. ### Claim 19 (depends on 18) The method as recited in claim 18 wherein an infiltrant infiltrates said re-processed TSP material layer during said exposing the enclosure to a high temperature high pressure process, the method further comprising removing at least a substantial portion of said infiltrant from at least a portion of said re-processed TSP material layer. ### Claim 20 (depends on 16) The method as recited in claim 16 wherein the at least a pre-sintered TSP material layer comprises a plurality of spaced apart TSP material layers, wherein after exposing said tungsten carbide layer fully encapsulates each of said plurality of re-processed TSP material layers. ### Claim 21 (depends on 20) The method as recited in claim 20 further comprising removing a portion of said tungsten carbide layer exposing at least surface of each re-processed TSP material layer of said plurality of re-processed TSP material layers, and wherein attaching comprises attaching a remaining portion of said tungsten carbide layer to said substrate. ### Claim 22 (depends on 21) The method as recited in claim 21 wherein an infiltrant infiltrates said re-processed TSP material layers during said exposing the enclosure to a high temperature high pressure process, the method further comprising removing at least a substantial portion of said infiltrant from at least a portion of each of said plurality of re-processed TSP material layers. ### Claim 23 A method of forming TSP compacts comprising: placing a plurality of sintered TSP material layers in an enclosure one sintered TSP material layer over another and surrounding each sintered TSP material layer with at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder including an infiltrant, or partially sintered tungsten carbide substrates; exposing said enclosure to a high temperature high pressure sintering process wherein said at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder, or partially sintered tungsten carbide substrates bonds to said TSP material layers forming a stack of re-processed TSP material layers comprising said re-processed TSP material layers one over the other with tungsten carbide bonded to each of said re-processed TSP material layers and surrounding each of said re-processed TSP material layers; removing said stack from said enclosure; cutting said stack forming a plurality of said re-processed TSP material layers, each of said plurality of re-processed TSP material layers having a tungsten carbide material layer formed from said at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder, or partially sintered tungsten carbide substrates bonded to one surface thereof; and attaching said tungsten carbide layer bonded to one of said plurality of re-processed TSP material layers to a tungsten carbide substrate forming said TSP compact. ### Claim 24 (depends on 7) The method as recited in claim 7 further comprising attaching said TSP material layer to a substrate using a high temperature high pressure sintering process.