# US 8,770,138 B2 · Semiconductor manufacturing apparatus and semiconductor manufacturing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,770,138 B2 - Document ID: US8770138B2 - Status: Granted - Kind: B2 - Application number: 13/180,702 - Filed: 2011-07-12 - Published: 2011-11-03 - Granted: 2014-07-08 - Earliest claimed: 2008-04-04 - Assignees: Tokyo Electron Limited - Applicants: Kenichi Hara; Mitsuaki Iwashita; Takashi Tanaka; Takayuki Toshima; Takehiko Orii - Inventors: Kenichi Hara; Mitsuaki Iwashita; Takashi Tanaka; Takayuki Toshima; Takehiko Orii - Web page: https://patentgrep.com/patent/US8770138B2 ## CPC - H10P 14/46: using a liquid - C23C 18/1628: {Specific elements or parts of the apparatus} - H10W 20/037: {the barrier, adhesion or liner layers being on top of a main fill metal} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism. ## Claims ### Claim 1 A semiconductor manufacturing apparatus comprising: a holding mechanism configured to hold a substrate rotatably; a nozzle configured to supply a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism configured to rotate the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism configured to move the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit configured to control the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism, wherein the control unit is configured to perform a first supplying process for supplying the processing solution while the nozzle driving mechanism moves the nozzle between a central portion and a periphery portion of the substrate, and the control unit is configured to perform a second supplying process for supplying the processing solution after the nozzle driving mechanism locates the nozzle at a preset position distanced away from an approximate center position of the substrate. ### Claim 2 (depends on 1) The semiconductor manufacturing apparatus of claim 1, wherein in the second supplying process, the processing solution is supplied from the nozzle continuously or intermittently. ### Claim 3 (depends on 1) The semiconductor manufacturing apparatus of claim 1, wherein when performing the second supplying process, the processing solution is supplied from the nozzle intermittently. ### Claim 4 (depends on 3) The semiconductor manufacturing apparatus of claim 3, wherein when performing the second supplying process, a time period of supplying the processing solution is set to be longer than a time period of stopping the supply of the processing solution. ### Claim 5 (depends on 3) The semiconductor manufacturing apparatus of claim 3, wherein when performing the second supplying process, a time period of supplying the processing solution is set to be shorter than a time period of stopping the supply of the processing solution. ### Claim 6 (depends on 1) The semiconductor manufacturing apparatus of claim 1, wherein when performing the second supplying process, the processing solution is supplied after locating the nozzle at a position distanced away from an approximate center position of the substrate by about 30 to 110 mm. ### Claim 7 (depends on 1) The semiconductor manufacturing apparatus of claim 1, wherein when performing the second supplying process, the processing solution is supplied after locating the nozzle at a position distanced away from an approximate center position of the substrate by about 30 to 70 mm. ### Claim 8 (depends on 1) The semiconductor manufacturing apparatus of claim 1, wherein the nozzle supplies the processing solution at an inclination angle of about 45 to 90 degrees with respect to the processing target surface of the substrate. ### Claim 9 (depends on 1) The semiconductor manufacturing apparatus of claim 1, wherein the nozzle supplies the processing solution at an inclination angle of about 50 to 70 degrees with respect to the processing target surface of the substrate.