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US 8,765,582 B2Granted
Method for extreme ultraviolet electrostatic chuck with reduced clamp effect
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hao Hsu, Chia-Chen Chen, Tzung-Chi Fu, Tzu-Wei Kao, Yu Chao Lin
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Abstract
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.
Claims20
A method, comprising:
- providing a semiconductor substrate having a front surface and a backside surface;
- forming a first polycrystalline silicon layer and a second polycrystalline silicon layer on the front surface and the backside surface of the semiconductor substrate, respectively;
- removing the first polycrystalline silicon layer from the front surface of the semiconductor substrate;
- implanting the second polycrystalline silicon layer on the backside surface of the semiconductor substrate to form a rough surface;
- and
- securing the backside surface of the semiconductor substrate to an electrostatic chuck such that the rough surface makes contact with the electrostatic chuck.
3 more elements
A method comprising:
- forming a semiconductor substrate having a front surface and a backside surface;
- forming integrated circuit features on the front surface of the semiconductor substrate;
- forming a polycrystalline silicon layer on the backside surface of the semiconductor substrate;
- forming a rough surface on the polycrystalline silicon layer by performing an implanting process on the polycrystalline silicon layer;
- and
- securing the backside surface of the semiconductor substrate to an electrostatic chuck such that the rough surface makes contact with the electrostatic chuck.
3 more elements
A method, comprising:
- forming a polycrystalline silicon layer on a backside surface of a semiconductor wafer;
- forming a rough surface on the polycrystalline silicon layer by performing an implanting process on the polycrystalline silicon layer;
- securing the semiconductor wafer on an electrostatic chuck of an Extreme Ultra-Violet (EUV) lithography system such that the polycrystalline silicon layer makes contact with the electrostatic chuck;
- and
- performing photolithographic processes with the EUV lithography system to form integrated circuits on a frontside surface of the semiconductor wafer.
2 more elements
Dependencies are inferred from the claim text.