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US 8,765,522 B2Granted
Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming a first oxide component over a base component, causing crystal growth which proceeds from a surface toward an inside of the first oxide component by first heat treatment to form a first oxide crystal component at least partly in contact with the base component, forming a second oxide component over the first oxide crystal component; and causing crystal growth by second heat treatment using the first oxide crystal component as a seed to form a second oxide crystal component.
Claims63
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode layer including a flat surface over a surface of a base;
- forming a gate insulating layer over the gate electrode layer;
- forming a first oxide semiconductor layer over the gate insulating layer;
- causing crystal growth which proceeds from a surface toward an inside of the first oxide semiconductor layer by first heat treatment to form a first single crystal layer;
- forming a second oxide semiconductor layer over the first single crystal layer;
- causing crystal growth which proceeds from the first single crystal layer toward a surface of the second oxide semiconductor layer thereover by second heat treatment to form a second single crystal layer;
- and
- forming a source electrode layer and a drain electrode layer over a stack of the first single crystal layer and the second single crystal layer.
5 more elements
A semiconductor device comprising:
- a gate electrode layer including a flat surface over a surface of a base;
- a gate insulating layer over the gate electrode layer;
- a first single crystal layer which is over and at least partly in contact with the gate insulating layer, has an a-b plane along a surface thereof and c-axis-aligned perpendicularly to the surface thereof;
- a second single crystal layer which is over and in contact with the first single crystal layer, has an a-b plane along a surface thereof and is c-axis-aligned perpendicularly to the surface thereof;
- and
- a source electrode layer and a drain electrode layer over a stack of the first single crystal layer and the second single crystal layer,
- wherein the first single crystal layer and the second single crystal layer are metal oxide layers.
4 more elements
A semiconductor device comprising:
- a gate electrode layer including a flat surface over a surface of a base;
- a gate insulating layer over the gate electrode layer;
- a first single crystal layer which is over and at least partly in contact with the gate insulating layer, has an a-b plane along a surface thereof and is c-axis-aligned perpendicularly to the surface thereof;
- a second single crystal layer which is on and in contact with the first single crystal layer, has an a-b plane along a surface thereof and is c-axis-aligned perpendicularly to the surface thereof;
- and
- a source electrode layer and a drain electrode layer over a stack of the first single crystal layer and the second single crystal layer,
- wherein the source electrode layer or the drain electrode layer is provided so as to overlap with a portion of the flat surface of the gate electrode layer.
4 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first oxide semiconductor layer over a substrate;
- causing crystal growth which proceeds from a surface toward an inside of the first oxide semiconductor layer by heat treatment, wherein a crystal layer is formed at the surface of the first oxide semiconductor layer;
- and
- forming a second oxide semiconductor layer over the first oxide semiconductor layer,
- wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise indium, zinc and a metal other than indium and zinc.
2 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first oxide semiconductor layer over a substrate;
- causing crystal growth which proceeds from a surface toward an inside of the first oxide semiconductor layer by first heat treatment, wherein a crystal layer is formed at the surface of the first oxide semiconductor layer;
- and
- forming a second oxide semiconductor layer over the first oxide semiconductor layer;
- causing crystal growth of the second oxide semiconductor layer by second heat treatment using the crystal layer as a seed;
- wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise indium, zinc and a metal other than indium and zinc.
3 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first oxide semiconductor layer over a substrate by a sputtering method;
- performing first heat treatment to the first oxide semiconductor layer;
- forming a second oxide semiconductor layer over the first oxide semiconductor layer by a sputtering method, wherein the substrate is heated during deposition of the second oxide semiconductor layer;
- performing second heat treatment to the second oxide semiconductor layer;
- wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise indium, zinc and a metal other than indium and zinc.
2 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode layer over a substrate;
- forming an insulating layer over the gate electrode layer;
- forming a first oxide semiconductor layer over the insulating layer;
- performing first heat treatment to the first oxide semiconductor layer;
- forming a second oxide semiconductor layer over the first oxide semiconductor layer, wherein the substrate is heated during deposition of the second oxide semiconductor layer;
- and
- performing second heat treatment to the second oxide semiconductor layer,
- wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise a region overlapping with the gate electrode layer, and
- wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise indium, zinc and a metal other than indium and zinc.
6 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first gate electrode layer over a substrate;
- forming a first insulating layer over the first gate electrode layer;
- forming a first oxide semiconductor layer over the first insulating layer;
- performing first heat treatment;
- forming a second oxide semiconductor layer over the first oxide semiconductor layer, wherein the substrate is heated during deposition of the second oxide semiconductor layer;
- performing second heat treatment;
- forming a second insulating layer over the second oxide semiconductor layer;
- and
- forming a second gate electrode layer over the second insulating layer,
- wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise a region overlapping with the first gate electrode layer,
- wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise a region overlapping with the second gate electrode layer, and
- wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise indium, zinc and a metal other than indium and zinc.
9 more elements
Dependencies are inferred from the claim text.