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US 8,760,818 B1Granted
Systems and methods for providing magnetic storage elements with high magneto-resistance using heusler alloys
AssigneeWestern Digital (Fremont), LLC
InventorsZhitao Diao, Qunwen Leng
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Abstract
Systems and methods for providing magnetic storage elements with high magneto-resistance using Heusler alloys are provided. One such method includes depositing a substrate including NiFe, depositing a seed layer on the substrate, depositing a buffer layer on the seed layer, and growing, epitaxially, an upper layer on the buffer layer, the upper layer including a Heusler alloy.
Claims13
A magnetic storage element comprising:
- a substrate comprising NiFe, wherein the substrate comprises a first crystalline structure;
- a seed layer on the substrate, wherein the seed layer is configured to substantially obstruct a transfer of the first crystalline structure to the buffer layer and the upper layer;
- wherein the seed layer is configured to provide a second crystalline structure different from the first crystalline structure;
- a buffer layer on the seed layer, wherein the buffer layer is configured to substantially maintain the second crystalline structure;
- wherein a structure of the buffer layer substantially matches a crystalline structure of the upper layer;
- and
- an upper layer on the buffer layer, the upper layer comprising a Heusler alloy grown epitaxially.
4 more elements
Dependencies are inferred from the claim text.