Method for making a sensor device using a graphene layer

A method of manufacturing a sensor device, the method comprising:

• forming a graphene layer on a semiconductor wafer comprising a plurality of integrated circuits and a plurality of first chip electrodes, wherein the graphene layer is coupled to the first chip electrodes;
• depositing a diffusion-selective plastic material on the graphene layer to at least partially cover the graphene layer, wherein a selectivity of the sensor device to different substances depends on diffusion of a substance through the diffusion-selective plastic material to the graphene layer;
• and
• thereafter separating the semiconductor wafer into a plurality of semiconductor chips, wherein at least one of the semiconductor chips comprises an integrated circuit electrically connected to the first chip electrodes.

A method of manufacturing a sensor device, the method comprising:

• forming a wafer comprising a plurality of integrated circuits and a plurality of first chip electrodes and second chip electrodes;
• separating the wafer into a plurality of semiconductor chips;
• placing at least two semiconductor chips of the plurality of semiconductor chips on a temporary carrier such that the first chip electrodes and the second chip electrodes face the temporary carrier;
• covering the at least two semiconductor chips with an encapsulating material;
• removing the temporary carrier after covering the at least two semiconductor chips with the encapsulating material;
• forming a continuous graphene layer over the at least two semiconductor chips and the encapsulating material, wherein the graphene layer is coupled to the first chip electrodes;
• depositing a diffusion-selective plastic material on the graphene layer to at least partially cover the graphene layer, wherein a selectivity of the sensor device to different substances depends on the diffusion of a substance through the diffusion-selective plastic material to the graphene layer;
• and
• separating the at least two semiconductor chips from each other by partially removing the encapsulating material.

A method of manufacturing a sensor device, the method comprising:

• forming a graphene layer over a semiconductor chip;
• forming a diffusion-selective plastic material on the graphene layer to at least partially cover the graphene layer, wherein a selectivity of the sensor device to different substances depends on the diffusion of a substance through the diffusion-selective plastic material to the graphene layer;
• and
• forming first and second electrodes over the semiconductor chip, wherein the graphene layer is coupled to the first and second electrodes, wherein the semiconductor chip contains an integrated circuit coupled to the first and second electrodes and configured to measure an electrical resistance between the first and second electrodes.