Miniature image sensor
AssigneesSTMicroelectronics (Crolles 2) SAS, STMicrolectronics S.A.
InventorsFrançois Roy, Arnaud Tournier
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Abstract
An image sensor including at least one photodiode and at least one transistor formed in and on a silicon substrate, the assembly of the photodiode and of the transistor being surrounded with a heavily-doped insulating wall, wherein the silicon substrate has a crystal orientation (110).
Claims13
An image sensor comprising at least one photodiode and at least one transistor formed in and on a silicon substrate, the assembly of the photodiode and of the transistor being surrounded with a heavily-doped, ion implanted insulating wall, the insulating wall formed by dopant ion implantation into the substrate, wherein the silicon substrate has a crystal orientation (110), wherein the insulating wall has a depth of 2 to 3 micrometers and a width between 0.2 and 0.5 micrometer.
An image sensor comprising:
- a substrate;
- a photodiode and a transistor formed in the substrate;
- and
- an ion implanted insulating wall formed by dopant ion implantation into the substrate and surrounding the photodiode and the transistor, the substrate being silicon having a crystal orientation (110), wherein the insulating wall has a depth of 2 to 3 micrometers and a width between 0.2 and 0.5 micrometer.
A method for fabrication of an image sensor, comprising:
- providing a silicon substrate having a crystal orientation (110);
- forming a photodiode and a transistor in the silicon substrate;
- and
- implanting a heavily-doped insulating wall in the silicon substrate and surrounding the photodiode and the transistor, wherein the insulating wall has a depth of 2 to 3 micrometers and a width between 0.2 and 0.5 micrometer.
Dependencies are inferred from the claim text.