# US 8,751,987 B2 · Method of resistor matching in analog integrated circuit layout

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- Number: US 8,751,987 B2
- Document ID: US8751987B2
- Status: Granted
- Kind: B2
- Application number: 13/547,520
- Filed: 2012-07-12
- Published: 2013-06-06
- Granted: 2014-06-10
- Earliest claimed: 2011-12-01
- Assignees: Oryx Holdings Pty Ltd.
- Applicants: Tsung-Yi Ho; Sheng-Jhih Jiang; Chan-Liang Wu
- Inventors: Tsung-Yi Ho; Sheng-Jhih Jiang; Chan-Liang Wu
- Web page: https://patentgrep.com/patent/US8751987B2

## CPC

- G06F 30/373: Design optimisation
- G06F 30/36: Circuit design at the analogue level
- G06F 30/39: Circuit design at the physical level (physical level design for reconfigurable circuits G06F30/347)
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)

## Abstract

A method of resistor matching in analog integrated circuit layout is disclosed. Shapes of mismatching resistor blocks are analyzed to obtain geometrical information for deforming the mismatching resistor blocks. The mismatching resistor blocks are deformed into centrosymmetrical blocks according to the obtained geometrical information, each mismatching resistor block being decomposed to a plurality of unit-resistors. The unit-resistors are placed into matching resistor blocks to return a resulting layout with improved matching quality by reducing centroid offset between a centroid of the unit-resistors and a centroid of the matching resistor block.

## Claims

### Claim 1

A method of resistor matching in analog integrated circuit layout, comprising the following stages:
analyzing shapes of mismatching resistor blocks to obtain geometrical information for deforming the mismatching resistor blocks;
deforming the mismatching resistor blocks into centrosymmetrical blocks according to the obtained geometrical information, each said mismatching resistor block being decomposed to a plurality of unit-resistors; and
placing the unit-resistors into matching resistor blocks to return a resulting layout with improved matching quality by reducing centroid offset between a centroid of the unit-resistors and a centroid of the matching resistor block;
wherein a step of evaluating degree of centrosymmetry of the mismatching resistor block is performed by rotating the mismatching resistor block 180 degrees and then comparing the rotated mismatching resistor block to the original mismatching resistor block.

### Claim 2 (depends on 1)

The method of claim 1, wherein the matching stage comprises:
generating two mirrored blocks of the mismatching resistor block;
projecting end points, excluding outermost end points, of edges of the mirrored blocks to the mismatching resistor block, thereby resulting in cut points;
decomposing the mismatch resistor block by horizontally or vertically cut through the end points and the cut points of edges of the mismatch resistor block, resulting in decomposed rectangles, wherein first-side edges of the rectangles are collected as a first set and second-side edges of the rectangles are collected as a second set;
taking one edge from the first set from beginning to end and taking one edge from the second set from end to beginning as a centrosymmetry pair; and
repeating the pairing step until the edges in the first set and the second set are totally paired.

### Claim 3 (depends on 2)

The method of claim 2, wherein the deforming stage comprises:
modifying shapes of the mismatching resistor blocks, under fixed-outline constrains, to the centrosymmetrical blocks; and
preserving original block topology in an original layout in order not to destroy circuit features.

### Claim 4 (depends on 2)

The method of claim 2, wherein the placing stage comprises:
limiting all normal blocks and all the rectangles of the mismatching resistor block not to exceed width and height of the layout;
constraining range of width of the normal block and keeping area of the normal block consistent after deformation;
limiting positions of the normal blocks such that their relative positions are not changed after deformation;
limiting each neighboring normal block of the mismatching resistor block not overlap therewith;
connecting the rectangles of the mismatching resistor block; and
keeping area of the mismatching resistor block consistent after deformation.

### Claim 5 (depends on 4)

The method of claim 4, wherein the placing stage comprises:
first removing one said unit-resistor from the mismatching resistor block, if there are odd number of the unit-resistors;
placing the removed unit-resistor at the center of the matching resistor block; and
placing each pair of the unit-resistors centrosymmetrically to the centroid of the matching resistor block.

### Claim 6 (depends on 5)

The method of claim 5, further comprising:
randomly selecting two said unit-resistors from different mismatching resistor blocks and then exchanging positions of the selected unit-resistors; and
exchanging positions of corresponding unit-resistors of the selected unit-resistors.