Method and structure for ultra-high density, high data rate ferroelectric storage disk technology using stabilization by a surface conducting layer
AssigneeInternational Business Machines Corporation
InventorDennis M. Newns
Life of this patent
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Abstract
A electrometric access head includes a supporting substrate and a plurality of read elements mounted on the supporting substrate. Each read element includes an electrometric sensor for detection of a sign of polarization of domains within a ferroelectric data layer of a ferroelectric storage medium. The ferroelectric data layer serves as a layer for storing information as bits defined by the signs of polarization of domains within the ferroelectric data layer, each polarized domain including a volume dipole polarization within the ferroelectric data layer and including an area of bound charge on and adjacent to a surface of the ferroelectric data layer.
Claims20
An electrometric access head, comprising:
- a supporting substrate;
- and
- a plurality of read elements mounted on said supporting substrate, each said read element comprising an electrometric sensor for a detection of a sign of polarization of domains within a ferroelectric data layer of a ferroelectric storage medium, said ferroelectric data layer serving as a layer for storing information as bits defined by said signs of polarization of domains within said ferroelectric data layer, each polarized domain comprising a volume dipole polarization within said ferroelectric data layer and including an area of bound charge on and adjacent to a surface of said ferroelectric data layer, wherein each said read element comprises a FinFET transistor and an axis channel length of each said FinFET transistor is approximately 20 nanometers (nm) and a width of said FinFET channel is approximately 10 nm”;
- and.
Dependencies are inferred from the claim text.