# US 8,742,502 B2 · Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction

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- Number: US 8,742,502 B2
- Document ID: US8742502B2
- Status: Granted
- Kind: B2
- Application number: 13/277,108
- Filed: 2011-10-19
- Published: 2012-10-25
- Granted: 2014-06-03
- Earliest claimed: 2005-07-11
- Assignees: Peregrine Semiconductor Corporation
- Applicants: Christopher N. Brindle; Jie Deng; Alper Genc; Chieh-Kai Yang
- Inventors: Christopher N. Brindle; Jie Deng; Alper Genc; Chieh-Kai Yang
- Web page: https://patentgrep.com/patent/US8742502B2

## CPC

- H10D 30/711: {having floating bodies}
- H10D 30/6706: {for preventing leakage current (TFTs characterised by the properties of the source or drain H10D30/6713)}
- H10D 30/6711: {by using electrodes contacting the supplementary regions or layers}
- H10D 62/125: {Shapes of junctions between the regions}
- H10D 62/60: Impurity distributions or concentrations
- H03K 2217/0018: Special modifications or use of the back gate voltage of a FET
- H03K 2217/0054: Gating switches, e.g. pass gates
- H10D 30/6741: {Group IV materials, e.g. germanium or silicon carbide (TFTs having oxide semiconductors H10D30/6755)}
- H10D 30/675: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)

## Abstract

A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

## Claims

### Claim 1

An accumulated charge control (ACC) floating body metal-oxide-semiconductor field effect transistor (MOSFET) comprising:
a gate;
a drain;
a source;
a body, wherein the body comprises a gate modulated conductive channel between the source and the drain;
a gate oxide layer positioned between the gate and the body; and
an accumulated charge sink (ACS) operatively coupled to the body, wherein the ACS comprises material selected to shift a capacitance versus voltage inflection inside the ACS outside of an operational body bias voltage range; wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET is biased to operate in an accumulated charge regime, and
wherein the gate modulated conductive channel, source, and drain have carriers of identical polarity when the MOSFET is biased to operate in an on-state and wherein the MOSFET operates in the accumulated charge regime when the MOSFET is biased to operate in a off-state and when the accumulated charge has a polarity that is opposite to the polarity of the source, drain, and gate modulated conductive channel; further comprising an electrical contact region wherein the electrical contact region and the ACS are coextensive.

### Claim 2

An accumulated charge control (ACC) floating body metal-oxide-semiconductor field effect transistor (MOSFET) comprising:
a gate;
a drain;
a source;
a body, wherein the body comprises a gate modulated conductive channel between the source and the drain;
a gate oxide layer positioned between the gate and the body; and
an accumulated charge sink (ACS) operatively coupled to the body, wherein the ACS comprises material selected to shift a capacitance versus voltage inflection inside the ACS outside of an operational body bias voltage range; wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET is biased to operate in an accumulated charge regime, and
wherein the gate modulated conductive channel, source, and drain have carriers of identical polarity when the MOSFET is biased to operate in an on-state and wherein the MOSFET operates in the accumulated charge regime when the MOSFET is biased to operate in a off-state and when the accumulated charge has a polarity that is opposite to the polarity of the source, drain, and gate modulated conductive channel; further comprising an electrical contact region positioned proximate to and in electrical contact with the ACS, wherein the electrical contact region facilitates electrical coupling to the ACS and wherein the electrical contact region comprises same material as material comprising the ACS.

### Claim 3

An accumulated charge control (ACC) floating body metal-oxide-semiconductor field effect transistor (MOSFET) comprising:
a gate;
a drain;
a source;
a body, wherein the body comprises a gate modulated conductive channel between the source and the drain;
a gate oxide layer positioned between the gate and the body; and
an accumulated charge sink (ACS) operatively coupled to the body, wherein the ACS comprises material selected to shift a capacitance versus voltage inflection inside the ACS outside of an operational body bias voltage range; wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET is biased to operate in an accumulated charge regime, and
wherein the gate modulated conductive channel, source, and drain have carriers of identical polarity when the MOSFET is biased to operate in an on-state and wherein the MOSFET operates in the accumulated charge regime when the MOSFET is biased to operate in a off-state and when the accumulated charge has a polarity that is opposite to the polarity of the source, drain, and gate modulated conductive channel; further comprising an electrical contact region positioned proximate to and in electrical contact with the ACS, wherein the electrical contact region facilitates electrical coupling to the ACS and wherein the electrical contact region comprises different material from material comprising the ACS.

### Claim 4

An accumulated charge control floating body MOSFET (ACC MOSFET) adapted to control charge accumulated in the body of the MOSFET when the MOSFET is biased to operate in an accumulated charge regime, comprising:
a gate, drain, source, floating body, and a gate oxide layer positioned between the gate and the floating body, wherein the ACC MOSFET is biased to operate in the accumulated charge regime when the MOSFET is operated in a non-conducting or near non-conducting state and charge accumulates within the body in a region proximate and underneath the gate oxide layer;
a plurality of accumulated charge sinks positioned proximate portions of the floating body wherein each accumulated charge sink of the plurality of accumulated charge sinks is electrically coupled to the floating body, and wherein, when the MOSFET is operated in the accumulated charge regime, ACS bias voltages are applied to each accumulated charge sink to control the accumulated charge in the MOSFET body or to remove the accumulated charge from the MOSFET body via the plurality of accumulated charge sinks; and
a plurality of electrical contact regions positioned proximate to corresponding accumulated charge sinks, wherein each electrical contact region facilitates electrical coupling to the corresponding accumulated charge sink.

### Claim 5

An accumulated charge control floating body MOSFET (ACC MOSFET) adapted to control charge accumulated in the body of the MOSFET when the MOSFET is biased to operate in an accumulated charge regime, comprising:
a) a gate, drain, source, floating body, and a gate oxide layer positioned between the gate and the floating body, wherein the ACC MOSFET is biased to operate in the accumulated charge regime when the MOSFET is operated in a non-conducting or near non-conducting state and charge accumulates within the body in a region proximate and underneath the gate oxide layer;
b) a first accumulated charge sink (ACS) positioned proximate a first distal end of the floating body, wherein the first ACS is in electrical communication with the floating body, and wherein, when the MOSFET is operated in the accumulated charge regime, a first ACS bias voltage (VACS1) is applied to the first ACS to control the accumulated charge in the MOSFET body or to remove the accumulated charge from the MOSFET body via the first ACS;
c) a second accumulated charge sink (ACS) positioned proximate a second distal end of the floating body, wherein the second ACS is in electrical communication with the floating body and wherein, when the MOSFET is operated in the accumulated charge regime, a second ACS bias voltage (VACS2) is applied to the second ACS to control the accumulated charge in the MOSFET body or to remove the accumulated charge from the MOSFET body via the second ACS;
d) a first electrical contact region positioned proximate to and in electrical communication with the first ACS, wherein the electrical contact region facilitates electrical coupling to the first ACS; and
e) a second electrical contact region positioned proximate to and in electrical communication with the second ACS, wherein the electrical contact region facilitates electrical coupling to the second ACS.

### Claim 6 (depends on 1, 2, 3, 4, 5)

The ACC MOSFET of claim 1, 2, 3, 4 or 5, wherein the body comprises silicon having a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

### Claim 7 (depends on 1, 2, 3, 4, 5)

The ACC MOSFET of claim 1, 2, 3, 4 or 5, wherein a bias voltage is applied to the ACS when the ACC MOSFET is biased to operate in an off-state, and wherein the bias voltage applied to the ACS is substantially negative with respect to ground.

### Claim 8 (depends on 1, 2, 3, 4, 5)

The ACC MOSFET of claim 1, 2, 3, 4 or 5, wherein the ACC MOSFET is fabricated in a silicon layer on an insulating layer, and wherein the source and drain extend substantially proximate the insulating layer.