# US 8,740,355 B2 · Liquid ejecting head, liquid ejecting apparatus, piezoelectric element, and piezoelectric ceramic

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- Number: US 8,740,355 B2
- Document ID: US8740355B2
- Status: Granted
- Kind: B2
- Application number: 13/316,212
- Filed: 2011-12-09
- Published: 2012-06-14
- Granted: 2014-06-03
- Earliest claimed: 2010-12-10
- Assignees: Seiko Epson Corporation
- Applicants: Masahisa Nawano; Tomokazu Kobayashi
- Inventors: Masahisa Nawano; Tomokazu Kobayashi
- Web page: https://patentgrep.com/patent/US8740355B2

## CPC

- H10N 30/2047: {Membrane type}
- B41J 2/14233: {of film type, deformed by bending and disposed on a diaphragm}
- B41J 2/161: {of film type, deformed by bending and disposed on a diaphragm}
- B41J 2/1642: {thin film formation by CVD [chemical vapor deposition]}
- B41J 2/1645: {thin film formation by spincoating}
- B41J 2/1646: {thin film formation by sputtering}
- H10N 30/078: by sol-gel deposition
- H10N 30/704: {based on piezoelectric or electrostrictive films or coatings}
- H10N 30/8561: {Bismuth-based oxides}
- H10N 30/878: {the principal material being non-metallic, e.g. oxide or carbon based}
- B41J 2202/03: Specific materials used
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- B41J: TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS

## Abstract

A liquid ejecting head includes a pressure generating chamber communicating with a nozzle aperture, and a piezoelectric element including a piezoelectric layer and electrodes that apply a voltage to the piezoelectric layer. The piezoelectric layer is made of a complex oxide having a perovskite structure. The piezoelectric layer contains bismuth, barium, iron and titanium. The piezoelectric layer has an intensity ratio of a (111) orientation intensity to a (100) orientation intensity of 3 or more.

## Claims

### Claim 1

A piezoelectric element comprising:
a piezoelectric layer made of a complex oxide having a perovskite structure, the piezoelectric layer containing bismuth, barium, iron and titanium and having an intensity ratio of a (111) orientation intensity to a (100) orientation intensity of 3 or more, wherein the piezoelectric layer is preferentially orientated in the (111) plane at a rate of 90% or more, and
electrodes that apply a voltage to the piezoelectric layer.

### Claim 2 (depends on 1)

The piezoelectric element according to claim 1, wherein a composition ratio of the bismuth to the barium in the complex oxide is in a range of 70/30 to 80/20.

### Claim 3 (depends on 1)

The piezoelectric element according to claim 1, wherein the piezoelectric layer is oriented only in the (111) plane.

### Claim 4 (depends on 1)

The piezoelectric element according to claim 1, wherein the electrodes include a first electrode disposed on a pressure generating chamber side of the piezoelectric layer, and a second electrode opposing the first electrode with the piezoelectric layer therebetween, the first electrode including a plurality of conductive layers, wherein a conductive layer closest to the piezoelectric layer is made of a conductive strontium compound.

### Claim 5 (depends on 4)

The piezoelectric element according to claim 4, wherein the conductive strontium compound is strontium ruthenate.

### Claim 6 (depends on 4)

The piezoelectric element according to claim 4, wherein the conductive strontium compound is strontium titanate containing niobium.

### Claim 7 (depends on 4)

The piezoelectric element according to claim 4, wherein the conductive strontium compound is preferentially oriented in the (111) plane.

### Claim 8 (depends on 1)

The piezoelectric element according to claim 1, further comprising a silicon substrate between a pressure generating chamber and the piezoelectric element.

### Claim 9 (depends on 1)

The piezoelectric element according to claim 1, wherein the complex oxide contains at least one additional element selected from a group consisting of manganese, cobalt, nickel, aluminum, zinc, and titanium.

### Claim 10 (depends on 1)

The piezoelectric element according to claim 1, wherein the complex oxide is in a pseudo-cubic system.

### Claim 11 (depends on 1)

A liquid ejecting head comprising the piezoelectric element as set forth in claim 1.

### Claim 12 (depends on 11)

A liquid ejecting apparatus comprising the liquid ejecting head as set forth in claim 11.