Back to results
US 8,736,823 B2Granted
Methods and processes for optical interferometric or holographic test in the development, evaluation, and manufacture of semiconductor and free-metal devices utilizing anisotropic and isotropic materials
AssigneeAttofemto, Inc.
InventorPaul L. Pfaff
Life of this patent
Estimating the term…
Abstract
Analysis and characterization of semiconductor and free-metal devices using a plurality of “live” and stored interference patterns or data detected to determine or generate two-dimensional or three-dimensional information of at least one internal stress or signal, or determining the effects thereof of internal or external stresses acting upon or within the electrical signals applied to a device under test or evaluation having exterior surfaces, interior structures, electronic features as well as determining the effects thereof of chemicals, bioelectric materials, or substances, placed adjacent to the surface of the devices under test.
Claims21
A method for testing, developing, and evaluating a device under test, or evaluating the manufacture thereof comprising:
- (a) providing a first beam of light from at least one light source having a first wavelength, the first beam having at least one of the following attributes:
- a coherence, a phase, a polarization, an amplitude, or a phase-conjugate waveform,
- (b) imposing the first beam of light on a test device over a spatial region within or incident to the test device substantially greater than the first wavelength or equal to the first wavelength while the test device has a first state of stress,
- (c) imposing the first beam of light on the test device over the region while the test device has a second state of stress,
- (d) providing a second beam of light having a second wavelength,
- (e) adjusting an angle of the second beam relative to the first beam or to the test device, or adjusting the angle of the second beam relative to a detection device or devices to cause the interference of the first and second beams,
- (f) obtaining data from the detection device or devices resulting from the interference of the first beam and the second beam within or incident to the test device representative of an incident external or internal stress or stresses acting upon and the effects thereof upon the region,
- (g) recording or electronically storing a plurality of interference images of the obtained data as data records, wherein the data records have at least one or more of the following attributes:
- a position, a polarization, a wavelength, a phase, an amplitude, a phase-conjugate waveform, an auto correlation waveform, an intensity, a displacement, a volume, a voltage displacement contour, a shape, a size, a pattern, a feature, a structure, an orientation, a static state, or a change therein from the first or second state of stress, and analyzing a plurality of the data records to determine the presence of an attribute, a feature, or a change therein, and
- (h) characterizing or the physically displaying effects of the incident external or internal stress or stresses acting upon the region or the analysis of at least one stress or stresses acting upon, or within, or incident to, the test device.
7 more elements
A method for testing, developing, and evaluating a device under test, or evaluating the manufacture thereof comprising:
- (a) providing a first beam of light from at least one light source having a first wavelength and a first polarization, the first beam having at least one of the following attributes:
- a coherence, a phase, an amplitude, or a phase-conjugate waveform,
- (b) imposing the first beam of light on a test device over a spatial region within or incident to the test device substantially greater than the first wavelength or equal to the first wavelength while the test device has a first state of stress,
- (c) imposing the first beam of light on the test device over the region while the test device has a second state of stress,
- (d) providing a second beam of light having a second wavelength and a second polarization incident to the first beam,
- (e) imposing the second beam of light on the test device or a detector device to cause the interference of the first and second beams to produce an interference pattern shorter than the first wavelength,
- (f) obtaining data from the detector device resulting from the interference of the first beam and the second beam within or incident to the test device representative of an incident external or internal stress or stresses acting upon and the effects thereof upon the region,
- (g) recording or electronically storing a plurality of interference patterns of the obtained data as data records, wherein the data records have at least one or more of the following attributes:
- a position, a polarization, a wavelength, a phase, an amplitude, a phase-conjugate waveform, an intensity, a computer generated hologram or an interferogram or holographic optical element, a displacement, a volume, a hologram or holographic optical element recorded or manufactured as to interfere with at least one of the first and second wavelengths or polarizations or a combination thereof, a voltage displacement contour, a shape, a size, a pattern, a feature, a structure, an orientation, a static state, an excitation, a luminescence, a phosphorescence, a photo emission, an optical absorption or shadow, a quenching of fluorescence or phosphorescence, or a change therein from the first or second state of stress, and analyzing a plurality of the data records to determine the presence of an attribute, a feature, or a change therein, and
- (h) characterizing or physically displaying effects of the incident external or internal stress or stresses acting upon the region or the analysis of at least one stress or stresses acting upon, or within, or incident to, the test device under test or evaluation.
7 more elements
A method for testing, developing, and evaluating a device under test, or evaluating the manufacture thereof comprising:
- (a) providing a first beam of light from at least one light source having a first wavelength, the first beam having at least one of the following attributes:
- a coherence, a phase, a polarization, an amplitude, or a phase-conjugate waveform,
- (b) imposing the first beam of light on a test device over a spatial region within or incident to the test device substantially greater than the first wavelength or equal to the first wavelength while the test device has a first state of stress,
- (c) imposing the first beam of light on the test device over the region while the test device has a second state of stress,
- (d) providing a second beam of light having a second wavelength,
- (e) adjusting an angle of the second beam relative to the first beam or to the test device, or adjusting the angle of the second beam relative to a detection device or devices to cause the interference of the first and second beams,
- (f) obtaining data from the detection device or devices resulting from the interference of the first beam and the second beam within or incident to the test device representative of an incident external or internal stress or stresses acting upon and the effects thereof upon the region,
- (g) varying the stress or the effects thereof, or any combination thereof, to test, determine, evaluate, or shape the test device,
- (h) recording or electronically storing a plurality of interference images of the obtained data as data records, wherein the data records have at least one or more of the following attributes:
- a position, a polarization, a wavelength, a phase, an amplitude, a phase-conjugate waveform, an auto correlation waveform, an intensity, a displacement, a volume, a voltage displacement contour, a shape, a size, a pattern, a feature, a structure, an orientation, a static state, an excitation, a luminescence, a phosphorescence, a photo emission, an optical absorption or shadow, a quenching of fluorescence or phosphorescence, or a change therein from the first or second state of stress, and analyzing a plurality of the data records to determine the presence of an attribute, a feature, or a change therein, and
- (i) characterizing or physically displaying effects of the incident external or internal stress or stresses acting upon the region or the analysis of at least one stress or stresses acting upon, or within, or incident to, the test device.
8 more elements
A method for manufacture of a semiconductor device, comprising:
- (a) fabricating a semiconductor device from a semiconductor material having electro-optic or photo-refractive properties,
- (b) providing a first beam of light from at least one light source having a first wavelength, the first beam having at least one of the following attributes:
- a coherence, a phase, a polarization, an amplitude, or a phase-conjugate waveform,
- (c) imposing the first beam of light on the semiconductor device over a spatial region within or incident to the semiconductor device substantially greater than the first wavelength or equal to the first wavelength while the semiconductor device has a first state of stress,
- (d) imposing the first beam of light on the semiconductor device over the region while the semiconductor device has a second state of stress,
- (e) providing a second beam of light having a second wavelength,
- (f) adjusting an angle of the second beam relative to the first beam or to the semiconductor device, or adjusting the angle of the second beam relative to a detection device or devices to cause the interference of the first and second beams,
- (g) obtaining data from the detection device or devices resulting from the interference of the first beam and the second beam within or incident to the semiconductor device representative of an incident external or internal stress or stresses acting upon and the effects thereof upon the region,
- (h) recording or electronically storing a plurality of interference images of the obtained data as data records, wherein the data records have at least one or more of the following attributes:
- a position, a polarization, a wavelength, a phase, an amplitude, a phase-conjugate waveform, an auto correlation waveform, an intensity, a displacement, a volume, a voltage displacement contour, a shape, a size, a pattern, a feature, a structure, an orientation, a static state, an excitation, a luminescence, a phosphorescence, a photo emission, an optical absorption or shadow, a quenching of fluorescence or phosphorescence, or a change therein from the first or second state of stress, and analyzing a plurality of the data records to determine the presence of an attribute, a feature, or a change therein, and
- (i) characterizing or physically displaying effects of the incident external or internal stress or stresses acting upon the region or the analysis of at least one stress or stresses acting upon, or within, or incident to, the semiconductor device.
8 more elements
Dependencies are inferred from the claim text.