US 8,735,219 B2 · Heterogeneous annealing method and device

Abstract

A method of integrating a first substrate having a first surface with a first insulating material and a first contact structure with a second substrate having a second surface with a second insulating material and a second contact structure. The first insulating material is directly bonded to the second insulating material. A portion of the first substrate is removed to leave a remaining portion. A third substrate having a coefficient of thermal expansion (CTE) substantially the same as a CTE of the first substrate is bonded to the remaining portion. The bonded substrates are heated to facilitate electrical contact between the first and second contact structures. The third substrate is removed after heating to provided a bonded structure with reliable electrical contacts.

Claims33

Dependent claims

A method of integrating a first element having a first contact structure with a second element having a second contact structure, comprising:

bonding a first element with a first metal bonding structure directly to a second element with a second metal bonding structure;
thinning said first element to a thickness that would result in distortion of said first element if heated to a temperature to facilitate direct connections between the first and second direct metal bonding structure;
and
attaching a third element having a thickness to reduce said distortion to the thinned first element;
heating bonded first, second, and third elements;
and
forming electrical connections between said first and second metal bonding structures.

4 more elements

Dependencies are inferred from the claim text.

Heterogeneous annealing method and device

Life of this patent

Heterogeneous annealing method and device

Life of this patent

Abstract

Claims33