Memory cell constructions, and methods for fabricating memory cell constructions

A method for fabricating a memory cell construction, comprising:

• forming a base comprising a bottom electrode extending through an electrically insulative material;
• forming programmable material over the base, a bottom surface of the programmable material extending across the bottom electrode and the electrically insulative material;
• forming a top electrode over the programmable material;
• patterning the top electrode and the programmable material to have coextensive sidewall surfaces along a cross-section through the top electrode and the programmable material;
• said sidewall surfaces extending upwardly from a top surface of the base;
• forming a retaining shell that extends along the sidewall surfaces of the programmable material and the top electrode, and that extends over the top electrode;
• and
• exposing the memory cell to thermal processing to increase a temperature of the programmable material, the base and the top electrode to at least about 300° C.;
• the exposure to said thermal processing creating a first stress due to thermal mismatch of the programmable material and the base;
• the retaining shell providing a second stress which is at least about equal to the first stress to substantially balance the first stress.